HR job title
- Retired Professor
- Contact Info
- 1 979 845 9807
Kuo, Yue Professor
Positions
- Professor, Chemical Engineering, College of Engineering
- Faculty Affiliate, Energy Institute, Texas A&M Engineering Experiment Station (TEES)
- Overview
- Publications
- Research
- Teaching
- Works By Students
- Background
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Overview
Publications
selected publications
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academic article
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Kuo, Y.
(2023).
Pulsed Rapid Thermal Annealing as a Low Thermal Budget Semiconductor Fabrication Process. ECS Meeting Abstracts.
MA2023-01(29), 1776-1776.
-
Samuel, A., & Kuo, Y.
(2023).
Estimation of the emission characteristics of solid-state incandescent light emitting devices by linear regression of spectral radiance. 204, 108651-108651.
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Chiang, T., Li, Z., Liu, P., & Kuo, Y.
(2022).
(Digital Presentation) High Performance Back-Channel-Etch Igzo TFT with Self-Passivate HfO2 By Backside Exposure Technology. MA2022-02(35), 1278-1278.
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Kuo, Y.
(2022).
(Edward G. Acheson Award) Exploration of Amorphous Thin Film Electronics. MA2022-02(15), 2409-2409.
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Kuo, Y.
(2022).
(Invited) Oxide TFT Applications: Principles and Challenges. MA2022-02(35), 1285-1285.
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Kuo, Y.
(2022).
(Invited) Plasma-Based Thin Film Technology in Fabrication of Nano- to Giga-Sized Electronics. MA2022-02(30), 1106-1106.
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Kuo, Y.
(2022).
(Invited) Status of Room-Temperature Mass-Production Capability Plasma-Based Copper Etch Process. MA2022-02(15), 810-810.
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Yoon, E. J., Su, J. Q., & Kuo, Y.
(2022).
Oxygen-Based Reactive Ion Etching of Ruthenium Thin Film. MA2022-02(18), 883-883.
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Su, J. Q., & Kuo, Y.
(2022).
Reliability of Complete Plasma Etched Ru/Cu Lines. MA2022-02(17), 858-858.
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Kuo, Y.
(2022).
(Invited) Oxide TFT Applications: Principles and Challenges. 109(6), 137-144.
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Su, J. Q., & Kuo, Y.
(2022).
Reliability of Complete Plasma Etched Ru/Cu Lines. 109(2), 31-39.
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Samuel, A., & Kuo, Y.
(2022).
Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model. 40(5), 052209-052209.
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Samuel, A., & Kuo, Y.
(2022).
Simulation of Light Intensity and Nano-Resistor Distribution in SSI-LEDs Using Python as a Framework. ECS Journal of Solid State Science and Technology.
11(8), 085006-085006.
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Samuel, A., & Kuo, Y.
(2022).
Comparison of Temperature and Light Distributions Around Nano-Resistors in SSI-LEDs. MA2022-01(31), 1303-1303.
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Su, J. Q., & Kuo, Y.
(2022).
Study on Lifetimes of Plasma Etched Ru Lines. MA2022-01(29), 1271-1271.
-
Su, J. Q., & Kuo, Y.
(2022).
Study on Lifetimes of Plasma Etched Ru Lines. 108(5), 23-30.
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Su, J. Q., Kuo, Y., & Liu, P.
(2022).
Gate dielectric material and process effects on distribution pattern of nano-resistors in solid-state incandescent light emitting devices. 7(15), 301-304.
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Kuo, Y., & Su, J. Q.
(2022).
Plasma oxidation as an effective method in etching copper interconnect lines at room-temperature. Japanese Journal of Applied Physics.
61(3), 030902-030902.
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Chen, Y., Yuan, T., Bae, S. J., & Kuo, Y.
(2021).
Two-level differential burn-in policy for spatially heterogeneous defect units in semiconductor manufacturing. Computers and Industrial Engineering.
162, 107768-107768.
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Fan, W., Liu, P., Kuo, P., Chang, C., Liu, I., & Kuo, Y.
(2021).
Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor. Nanomaterials.
11(11), 3070-3070.
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Yang, C., & Kuo, Y.
(2021).
Characteristics of Nickel Oxide Modified Zr-Doped HfO2 High-k Thin Films. MA2021-02(12), 626-626.
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Su, J. Q., & Kuo, Y.
(2021).
Si Substrate Effect on Characteristics of Solid State Incandescent Light Emitting Devices. MA2021-02(12), 620-620.
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Samuel, A., Natarajan, K., & Kuo, Y.
(2021).
Simulation of SSI-LED Light Emission Pattern Using Python As a Simulation Framework. MA2021-02(35), 1826-1826.
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Yang, C., & Kuo, Y.
(2021).
Characteristics of Nickel Oxide Modified Zr-Doped HfO2 High-k Thin Films. 104(3), 63-67.
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Su, J. Q., & Kuo, Y.
(2021).
Si Substrate Effect on Characteristics of Solid State Incandescent Light Emitting Devices. 104(3), 47-53.
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Lin, W., & Kuo, Y.
(2021).
Electrical and Optical Characteristics of WOx, ZrHfO, and Tri-Layer WOx Embedded ZrHfO High-k Based SSI-LEDs. MA2021-01(33), 1078-1078.
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Shukla, A., & Kuo, Y.
(2021).
Geometrical Layout Effect on Light Intensity Distribution in SSI-LED. MA2021-01(30), 1000-1000.
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Su, J. Q., & Kuo, Y.
(2021).
Layer Thickness Effect on Lifetime of Copper Oxide Passivated Plasma Etched Copper Line. MA2021-01(30), 1005-1005.
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Lin, W., & Kuo, Y.
(2021).
Electrical and Optical Characteristics of WOx, ZrHfO, and Tri-Layer WOx Embedded ZrHfO High-k Based SSI-LEDs. 102(3), 63-69.
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Shukla, A., & Kuo, Y.
(2021).
Geometrical Layout Effect on Light Intensity Distribution in SSI-LED. 102(2), 159-164.
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Su, J. Q., & Kuo, Y.
(2021).
Layer Thickness Effect on Lifetime of Copper Oxide Passivated Plasma Etched Copper Line. 102(2), 167-175.
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Su, J. Q., & Kuo, Y.
(2020).
Self-aligned Copper Oxide Passivation Layer - A Study on the Reliability Effect. MRS Advances.
5(54-55), 2827-2836.
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Jiang, J., & Kuo, Y.
(2020).
(Invited) UV and Gate Stress Induced Defects in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors and Self-Repair. MA2020-02(28), 1917-1917.
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Li, Z., Chiang, T., Liu, P., & Kuo, Y.
(2020).
Amorphous IGZO TFTs with Low Electrical Hysteresis By Using Two-Photomask Process. MA2020-02(28), 1927-1927.
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Su, J. Q., & Kuo, Y.
(2020).
Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines. MA2020-02(14), 1383-1383.
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Shukla, A., & Kuo, Y.
(2020).
Influence of Vertical and Radial Distances of Nano-Resistors in SSI-LEDs on Light Intensity Distributions. MA2020-02(29), 1965-1965.
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Kuo, Y.
(2020).
Welcome Remarks - H03: Thin Film Transistors 15 (TFT 15). MA2020-02(28), open-open.
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Su, J. Q., Li, M., & Kuo, Y.
(2020).
Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines. ECS Journal of Solid State Science and Technology.
9(10), 104009-104009.
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Jiang, J., & Kuo, Y.
(2020).
(Invited) UV and Gate Stress Induced Defects in Amorphous Indium Gallium Zinc Oxide Thin Film Transistors and Self-Repair. 98(7), 39-46.
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Su, J. Q., & Kuo, Y.
(2020).
Copper Oxide Passivation Effect on Electromigration Lifetime of Plasma Etched Copper Lines. 98(3), 99-105.
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Shukla, A., & Kuo, Y.
(2020).
Influence of Vertical and Radial Distances of Nano-Resistors in SSI-LEDs on Light Intensity Distributions. 98(3), 163-170.
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Yuan, T., Bae, S. J., & Kuo, Y.
(2020).
Statistical Models of Overdispersed Spatial Defects for Predicting the Yield of Integrated Circuits. IEEE Transactions on Reliability.
69(2), 510-521.
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Liu, L., Wang, Y., Lin, Y., Zhang, X., & Kuo, Y.
(2020).
Si Wafer Dopant Concentration Effect on Light Emission of Solid State Incandescent Light Emitting Devices. ECS Journal of Solid State Science and Technology.
9(3), 036004-036004.
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Shukla, A., Kuo, Y., & Kuo, T. W.
(2020).
Comparison of simulated and measured light emission spectra from solid state incandescent light emitting devices. MRS Advances.
5(39), 2033-2041.
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Kuo, Y.
(2018).
Past Performance Is No Guarantee of Future Results But 116 Years of Continuous Success Is a Sign of a Great Future. The Electrochemical Society interface.
27(2), 7-7.
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Zhang, S., & Kuo, Y.
(2018).
Memory Functions of Cadmium Sulfide Embedded Zr-Doped HfO2 High-k Dielectrics. ECS Journal of Solid State Science and Technology.
7(5), Q97-Q103.
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Zhang, S., & Kuo, Y.
(2018).
Electrical properties of nano-resistors made from the Zr-doped HfO2 high-k dielectric film. Journal of Physics D: Applied Physics.
51(9), 09lt02-09LT02.
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Kuo, Y.
(2018).
Globalization Starting from Science. The Electrochemical Society interface.
27(4), 7-7.
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Kuo, Y.
(2018).
From the President: Globalization Starting from Science. 27(4), 7-7.
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Zhang, S., & Kuo, Y.
(2018).
Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device. ECS Journal of Solid State Science and Technology.
7(1), R3023-R3029.
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Chen, T., Kuo, Y., Chang, T., Chen, M., & Chen, H.
(2017).
Stability of double gate amorphous In-Ga-Zn-O thin-film transistors with various top gate designs. Japanese Journal of Applied Physics.
56(12), 120303-120303.
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Chen, T., Kuo, Y., Chang, T., Chen, M., & Chen, H.
(2017).
Mechanism of a-IGZO TFT device deterioration-illumination light wavelength and substrate temperature effects. Journal of Physics D: Applied Physics.
50(42), 42lt02-42LT02.
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Kim, K., & Kuo, Y.
(2017).
Light Sensing of a-Si:H p-i-n Diode-Mechanism of Asymmetric Charge Carrier Transfer. 1(1), 1-4.
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Zhang, S., & Kuo, Y.
(2017).
Communication-Filtration of Light Emitted from Solid State Incandescent Light Emitting Devices. ECS Journal of Solid State Science and Technology.
6(4), Q39-Q41.
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Kim, K., & Kuo, Y.
(2017).
Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation. ECS Journal of Solid State Science and Technology.
6(1), Q29-Q33.
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Zhang, S., & Kuo, Y.
(2016).
Temperature Effect on Dielectric Breakdown and Charges Retention of Nanocrystalline Cadmium Selenide Embedded Zr-Doped HfO2 High-k Dielectric Thin Film. IEEE Transactions on Device and Materials Reliability.
16(4), 561-569.
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Lin, C., & Kuo, Y.
(2016).
Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer. ECS Journal of Solid State Science and Technology.
5(3), Q75-Q80.
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Li, D., Kim, K., Zhang, S., Dong, G., & Kuo, Y.
(2015).
High-performance organic-inorganic hybrid optocouplers based on organic light-emitting diodes and alpha-Si:H photodiodes. Sensors and Actuators A: Physical.
236, 364-368.
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Kuo, Y.
(2015).
A Solid-State Thin-Film Incandescent Light-Emitting Device. IEEE Transactions on Electron Devices.
62(11), 3536-3540.
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Lin, C., & Kuo, Y.
(2015).
Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack. Applied Physics Letters.
106(12), 121107-121107.
-
Lin, C., Kuo, Y., & Zhang, S.
(2014).
Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack. 32(3), 03d116-03D116.
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Yuan, T., Liu, X. i., Ramadan, S. Z., & Kuo, Y.
(2014).
Bayesian Analysis for Accelerated Life Tests Using a Dirichlet Process Weibull Mixture Model. IEEE Transactions on Reliability.
63(1), 58-67.
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Lin, C., & Kuo, Y.
(2014).
Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-k dielectric stack. Journal of Applied Physics.
115(8), 084113-084113.
-
Lin, C., & Kuo, Y.
(2014).
Factors Affecting Light Emission from Solid State Incandescent Light Emitting Devices with Sputter Deposited Zr-Doped HfO2 Thin Films. ECS Journal of Solid State Science and Technology.
3(10), Q182-Q189.
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Kuo, Y., & Furuta, M.
(2014).
Introduction to the Focus Issue on Oxide Thin Film Transistors. ECS Journal of Solid State Science and Technology.
3(9), Y5-Y5.
-
Lin, C., & Kuo, Y.
(2014).
White light emission from ultrathin tungsten metal oxide film. 32(1), 011208-011208.
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Kuo, Y., & Lin, C.
(2013).
Micro light emitting device prepared from sputter deposited thin hafnium oxide film. Solid-State Electronics.
89, 120-123.
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Lin, C., & Kuo, Y.
(2013).
Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-k Nonvolatile Memory Functions. ECS Journal of Solid State Science and Technology.
2(1), Q16-Q22.
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Kuo, Y., & Lin, C.
(2013).
Electroluminescence from Metal Oxide Thin Films. ECS Solid State Letters.
2(8), Q59-Q61.
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Lin, C., & Kuo, Y.
(2013).
Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum. 31(3), 030605-030605.
-
Kuo, Y., & Lin, C.
(2013).
A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer. Applied Physics Letters.
102(3), 031117-031117.
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Kuo, Y.
(2013).
Thin Film Transistor Technology-Past, Present, and Future. The Electrochemical Society interface.
22(1), 55-61.
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Yang, C., Yuan, T., Kuo, W., & Kuo, Y.
(2012).
Non-parametric Bayesian modeling of hazard rate with a change point for nanoelectronic devices. IIE Transactions.
44(7), 496-506.
-
Birge, A., & Kuo, Y.
(2012).
Memory Functions of Nanocrystalline ITO Embedded Zirconium-Doped Hafnium Oxide High-k Capacitor with ITO Gate. Journal of Electrochemical Society.
159(6), H595-H598.
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Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.
(2012).
Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k. ECS Electrochemistry Letters.
15(6), H192-H194.
-
Lin, C., & Kuo, Y.
(2012).
Electromigration study of copper lines on steps prepared by a plasma-based etch process. Journal of Applied Physics.
111(6), 064909-064909.
-
Lin, C., & Kuo, Y.
(2012).
Process effects of copper film over a step etched with a plasma-based process. 30(2), 021204-021204.
-
Lin, C., & Kuo, Y.
(2012).
Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications. Journal of Electrochemical Society.
159(3), H214-H219.
-
Flewitt, A. J., Kuo, Y., & Jang, J.
(2012).
Untitled. Journal of Display Technology.
8(1), 5-6.
-
Chatterjee, S., & Kuo, Y.
(2011).
Effects of interfacial charges on doped and undoped Hfo
x stack layer with TiN metal gate electrode for nano-scaled CMOS generation. Journal of Nano- and Electronic Physics. 3(1 PART1), 162-169.
-
Lin, C., & Kuo, Y.
(2011).
Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories - Material and Electrical Properties. Journal of Electrochemical Society.
158(8), H756-H762.
-
Lin, C., & Kuo, Y.
(2011).
Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories. Journal of Applied Physics.
110(2), 024101-024101.
-
Lin, C., & Kuo, Y.
(2011).
Ruthenium Modified Zr-Doped HfO2 High-k Thin Films with Low Equivalent Oxide Thickness. Journal of Electrochemical Society.
158(7), G162-G168.
-
Chatterjee, S., & Kuo, Y.
(2011).
EFFECTS OF INTERFACIAL CHARGES ON DOPED AND UNDOPED HfOx STACK LAYER WITH TIN METAL GATE ELECTRODE FOR NANO-SCALED CMOS GENERATION. Journal of Nano- and Electronic Physics.
3(1), 162-169.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2011).
Temperature Influence on Nanocrystals Embedded High-k Nonvolatile C-V Characteristics. ECS Electrochemistry Letters.
14(1), II50-II52.
-
Kuo, Y.
(2010).
Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories. ECS Electrochemistry Letters.
13(12), H460-H463.
-
Yang, C., Kuo, Y., & Lin, C.
(2010).
Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories. Applied Physics Letters.
96(19), 192106-192106.
-
Yuan, T., & Kuo, Y.
(2010).
Bayesian Analysis of Hazard Rate, Change Point, and Cost-Optimal Burn-In Time for Electronic Devices. IEEE Transactions on Reliability.
59(1), 132-138.
-
Lin, C., & Kuo, Y.
(2010).
Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO2 High-k Dielectric. ECS Electrochemistry Letters.
13(3), H83-H86.
-
Liu, G., & Kuo, Y.
(2009).
Electromigration of Flat and Bent Copper Lines Patterned with a Plasma-Based Etch Process. Journal of Electrochemical Society.
156(7), H579-H584.
-
Kuo, Y., & Nominanda, H.
(2009).
Charge and Discharge of Floating-Gate Amorphous Silicon Thin-Film Transistor Nonvolatile Memories. Journal of the Korean Physical Society.
54(1), 409-414.
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Liu, G., Kuo, Y., Ahmed, S., Buckley, D. N., & Tanaka-Ahmed, T.
(2008).
Grain-size effect on a plasma-based copper etch process. Journal of Electrochemical Society.
155(6), H432-H437.
-
Lu, J., Lin, C., & Kuo, Y.
(2008).
Nanocrystalline zinc-oxide-embedded zirconium-doped hafnium oxide for nonvolatile memories. Journal of Electrochemical Society.
155(6), H386-H389.
-
Lee, H. H., & Ku, Y.
(2008).
Surface modification of gel-free microchannel surface electrophoresis device for DNA identification. Japanese Journal of Applied Physics.
47(4), 2300-2305.
-
Wan, R., Yan, J., Kuo, Y., & Lu, J.
(2008).
Dielectric breakdown and charge trapping of ultrathin ZrHfO/SiON high-k gate stacks. Japanese Journal of Applied Physics.
47(3), 1639-1641.
-
Kuo, Y.
(2008).
Thin-film transistor and ultra-large scale integrated circuit: Competition or collaboration. Japanese Journal of Applied Physics.
47(3), 1845-1852.
-
Liu, G., & Kuo, Y.
(2008).
Additive-gas effects on Cl-2 plasma-based copper-etch process and sidewall attack. Journal of Electrochemical Society.
155(2), H97-H102.
-
Chatterjee, S., Kuo, Y., & Lu, J.
(2008).
Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices. Microelectronic Engineering.
85(1), 202-209.
-
Birge, A., Lin, C., & Kuo, Y.
(2007).
Memory functions of nanocrystalline indium tin oxide embedded zirconium-doped hafnium oxide MOS capacitors. Journal of Electrochemical Society.
154(10), H887-H893.
-
Nominanda, H., & Kuo, Y.
(2007).
Memory functions of amorphous silicon-based floating gate MIS capacitors. ECS Electrochemistry Letters.
10(8), H232-H234.
-
Liu, G., & Kuo, Y.
(2007).
Reactive ion etching of titanium tungsten thin films. Journal of Electrochemical Society.
154(7), H653-H658.
-
Yan, J., Kuo, Y., & Lu, J.
(2007).
Zirconium-doped hafnium oxide high-k dielectrics with subnanometer equivalent oxide thickness by reactive sputtering. ECS Electrochemistry Letters.
10(7), H199-H202.
-
Ahmed, S., Buckley, D. N., Nakahara, S., Ahmed, T. T., & Kuo, Y.
(2007).
An isothermal annealing study of spontaneous morphology change in electrodeposited copper metallization. Journal of Electrochemical Society.
154(3), D103-D112.
-
Kuo, Y., & Nominanda, H.
(2006).
Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices. Applied Physics Letters.
89(17), 173503-173503.
-
Lu, J., Kuo, Y., Yan, J., & Lin, C.
(2006).
Nanocrystalline silicon embedded zirconium-doped hafnium oxide high-k memory device. Japanese Journal of Applied Physics.
45(33-36), L901-L903.
-
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.
(2006).
Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer. Applied Physics Letters.
89(7), 072901-072901.
-
Giordano, S. H., Lee, A., Kuo, Y., Freeman, J., & Goodwin, J. S.
(2006).
Late gastrointestinal toxicity after radiation for prostate cancer. Cancer.
107(2), 423-432.
-
Lee, H. H., & Kuo, Y.
(2006).
Integration of an amorphous silicon thin film transistor with a microchannel electrophoresis for protein identification. ECS Electrochemistry Letters.
9(6), J21-J23.
-
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.
(2006).
Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks. 88(20), 202904-202904.
-
Lu, J., Kuo, Y., & Tewg, J. Y.
(2006).
Hafnium-doped tantalum oxide high-k gate dielectrics. Journal of Electrochemical Society.
153(5), G410-G416.
-
Chatterjee, S., Kuo, Y., Lu, J., Tewg, J. Y., & Majhi, P.
(2006).
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. Microelectronics Reliability.
46(1), 69-76.
-
Lu, J., Kuo, Y., Chatterjee, S., & Tewg, J. Y.
(2006).
Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric. 24(1), 349-357.
-
Lu, J., & Kuo, Y.
(2005).
Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness. Applied Physics Letters.
87(23), 232906-232906.
-
Tewg, J. Y., Kuo, Y., Lu, J., & Schueler, B. W.
(2005).
Influence of a 5 A tantalum nitride interface layer on dielectric properties of zirconium-doped tantalum oxide high-k films. Journal of Electrochemical Society.
152(8), G617-G622.
-
Tewg, J. Y., Kuo, Y., & Lu, J.
(2005).
Zirconium-doped tantalum oxide gate dielectric films integrated with molybdenum, molybdenum nitride, and tungsten nitride gate electrodes. Journal of Electrochemical Society.
152(8), G643-G650.
-
Ristova, M., Kuo, Y., Lee, H. H., & Tewg, J. Y.
(2005).
Effect of long-term He-Ne laser light exposure and subsequent annealing on hydrogenated amorphous silicon pin photodiodes. Semiconductor Science and Technology.
20(10), 1005-1009.
-
Tewg, J. Y., Kuo, Y., & Lu, J.
(2005).
Suppression of crystallization of tantalum oxide thin film by doping with zirconium. ECS Electrochemistry Letters.
8(1), G27-G29.
-
Luo, W., Kuo, Y., & Kuo, W.
(2004).
Dielectric relaxation and breakdown detection of doped tantalum oxide high-k thin films. IEEE Transactions on Device and Materials Reliability.
4(3), 488-494.
-
Kuo, Y., & Lee, S.
(2004).
A new, room-temperature, high-rate plasma-based copper etch process. Vacuum.
74(3-4), 473-477.
-
Lu, J., Kuo, Y., Tewg, J. Y., & Schueler, B.
(2004).
Effects of the TaNx interface layer on doped tantalum oxide high-k films. Vacuum.
74(3-4), 539-547.
-
Lee, S., & Kuo, Y.
(2004).
Hydrogen bromide plasma-copper reaction in a new copper etching process. THIN SOLID FILMS.
457(2), 326-332.
-
Tewg, J. Y., Kuo, Y., Lu, J., & Schueler, B. W.
(2004).
Electrical and physical characterization of zirconium-doped tantalum oxide thin films. Journal of Electrochemical Society.
151(3), F59-F67.
-
Ristova, M., Kuo, Y., & Lee, H. H.
(2003).
Study of hydrogenated amorphous silicon thin films as a potential sensor for He-Ne laser light detection. Applied Surface Science.
218(1-4), 44-53.
-
Ristova, M., Kuo, Y., & Lee, S.
(2003).
Influence of the roughness of molybdenum back electrode on the photodiode characteristics under He-Ne illumination. Semiconductor Science and Technology.
18(8), 788-793.
-
Kuo, Y., Lu, J., & Tewg, J. Y.
(2003).
Tantalum nitride interface layer influence on dielectric properties of hafnium doped tantalum oxide high dielectric constant thin films. Japanese Journal of Applied Physics.
42(7 A),
-
Kuo, Y., Lu, J., & Tewg, J. Y.
(2003).
Tantalum nitride interface layer influence on dielectric properties of hafnium doped tantalum oxide high dielectric constant thin films. Japanese Journal of Applied Physics.
42(7A), L769-L771.
-
Lee, S. H., & Kuo, Y.
(2002).
A new hydrogen chloride plasma-based copper etching process. Japanese Journal of Applied Physics.
41(12), 7345-7352.
-
Kuo, Y., & Suzuki, K.
(2002).
Advanced flat-panel displays and materials. Materials Research Society (MRS) Bulletin.
27(11), 859-863.
-
Kuo, Y., & Lee, H. H.
(2002).
Plasma-enhanced chemical vapor deposition of silicon nitride below 250 degrees C. Vacuum.
66(3-4), 299-303.
-
Lee, S., & Kuo, Y.
(2001).
Chlorine plasma/copper reaction in a new copper dry etching process. Journal of Electrochemical Society.
148(9), G524-G529.
-
Kuo, Y., & Lee, S.
(2001).
Room-temperature copper etching based on a plasma-copper reaction. Applied Physics Letters.
78(7), 1002-1004.
-
Kuo, Y., & Lee, H. H.
(2001).
Microchannel electrophoresis device for separation and in situ detection of proteins. ECS Electrochemistry Letters.
4(10), H23-H25.
-
Kuo, Y.
(2000).
Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si : H thin-film transistors. Vacuum.
59(2-3), 484-491.
-
Kuo, Y., & Lee, S.
(2000).
A novel plasma-based copper dry etching method. 39(3AB), L188-L190.
-
Kuo, Y., & Lee, S.
(2000).
Novel plasma-based copper dry etching method. Japanese Journal of Applied Physics.
39(3 A/B),
-
Kuo, Y.
(1999).
Papers on plasma processing - Preface. IBM Journal of Research and Development.
43(1-2), 3-4.
-
Kuo, Y., Okajima, K., & Takeichi, M.
(1999).
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays. IBM Journal of Research and Development.
43(1-2), 73-88.
-
Kuo, Y., Okajima, K., & Takeichi, M.
(1999).
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays. IBM Journal of Research and Development.
43(1-2), 73-87.
-
Kuo, Y., & Tai, T. L.
(1998).
High temperature reactive ion etching of indium-tin oxide with HBr and CH4 mixtures. Journal of Electrochemical Society.
145(12), 4313-4317.
-
Kuo, Y.
(1998).
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - a critical review. Vacuum.
51(4), 741-745.
-
Kuo, Y.
(1998).
Reactive ion etching of indium tin oxide by SiCl4- based plasmas - substrate temperature effect. Vacuum.
51(4), 777-779.
-
Colgan, E. G., Alt, P. M., Wisnieff, R. L., Fryer, P. M., Galligan, E. A., Graham, W. S., ... Wright, S. L.
(1998).
A 10.5-in-diagonal SXGA active-matrix display. IBM Journal of Research and Development.
42(3-4), 427-444.
-
Kuo, Y.
(1997).
Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n(+) silicon film. Applied Physics Letters.
71(19), 2821-2823.
-
Kuo, Y.
(1997).
Anomalous high rate reactive ion etching process for indium tin oxide. 36(5B), L629-L631.
-
Kuo, Y.
(1997).
High Temperature Reactive Ion Etching of IndiumTin Oxide. Journal of Electrochemical Society.
144(4), 1411-1416.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Hunt, D., ... Wright, S.
(1997).
A sixmask TFTLCD process using coppergate metallurgy. Journal of the Society for Information Display.
5(1), 49-52.
-
Kuo, Y.
(1997).
Anomalous high rate reactive ion etching process for indium tin oxide. Japanese Journal of Applied Physics.
36(5 B),
-
Paloura, E. C., Lioutas, C., Vouroutzis, N., Arnoldbik, W. M., Habraken, F., & Kuo, Y.
(1996).
Microstructure modifications induced by bonded hydrogen in N-rich SiNx:H films. Journal of Applied Physics.
80(10), 5742-5747.
-
Kuo, Y., & Kozlowski, P. M.
(1996).
Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon. 69(8), 1092-1094.
-
Kuo, Y.
(1996).
Horizontally redundant, split-gate a-Si:H thin film transistors. Journal of Electrochemical Society.
143(8), 2680-2682.
-
Kuo, Y.
(1996).
Non-photosensitive, vertically redundant two-channel a-Si:H thin film transistor. Journal of Electrochemical Society.
143(4), 1469-1471.
-
KUO, Y.
(1995).
SINGLE-GATE MULTICHANNEL AMORPHOUS-SILICON THIN-FILM TRANSISTORS. Applied Physics Letters.
67(21), 3174-3176.
-
KUO, Y.
(1995).
THIN-FILM TRANSISTORS WITH MULTISTEP DEPOSITED AMORPHOUS-SILICON LAYERS. Applied Physics Letters.
67(15), 2173-2175.
-
KUO, Y.
(1995).
PLASMA-ETCHING AND DEPOSITION FOR A-SI-H THIN-FILM TRANSISTORS. Journal of Electrochemical Society.
142(7), 2486-2507.
-
KUO, Y.
(1995).
PECVD SILICON-NITRIDE AS A GATE DIELECTRIC FOR AMORPHOUS-SILICON THIN-FILM-TRANSISTOR - PROCESS AND DEVICE PERFORMANCE. Journal of Electrochemical Society.
142(1), 186-190.
-
KUO, Y.
(1994).
THIN-FILM TRANSISTORS WITH GRADED SINX GATE DIELECTRICS. Journal of Electrochemical Society.
141(4), 1061-1065.
-
KUO, Y., & SCHROTT, A. G.
(1994).
REACTIVE ION ETCH PROCESSES FOR AMORPHOUS-SILICON THIN-FILM TRANSISTORS - A SICL4 BASED CHEMISTRY. Journal of Electrochemical Society.
141(2), 502-506.
-
KUO, Y.
(1993).
ETCH MECHANISM IN THE LOW REFRACTIVE-INDEX SILICON-NITRIDE PLASMA-ENHANCED CHEMICAL-VAPOR-DEPOSITION PROCESS. Applied Physics Letters.
63(2), 144-146.
-
KUO, Y.
(1993).
PLASMA SWELLING OF PHOTORESIST. Japanese Journal of Applied Physics.
32(1A-B), L126-L128.
-
KUO, Y.
(1993).
REACTIVE ION ETCHING OF SPUTTER DEPOSITED TANTALUM WITH CF4, CF3CL, AND CHF3. Japanese Journal of Applied Physics.
32(1A), 179-185.
-
KUO, Y.
(1992).
REACTIVE ION ETCH DAMAGES IN INVERTED, TRILAYER THIN-FILM TRANSISTOR. Applied Physics Letters.
61(23), 2790-2792.
-
KUO, Y.
(1992).
A SELF-ALIGNED, TRILAYER, A-SIH THIN-FILM TRANSISTOR PREPARED FROM 2 PHOTOMASKS. Journal of Electrochemical Society.
139(4), 1199-1204.
-
KUO, Y., & CROWDER, M. S.
(1992).
REACTIVE ION ETCHING OF PECVD N+ A-SI-H - PLASMA DAMAGE TO PECVD SILICON-NITRIDE FILM AND APPLICATION TO THIN-FILM TRANSISTOR PREPARATION. Journal of Electrochemical Society.
139(2), 548-552.
-
KUO, Y.
(1992).
REACTIVE ION ETCHING OF SPUTTER DEPOSITED TANTALUM OXIDE AND ITS ETCH SELECTIVITY TO TANTALUM. Journal of Electrochemical Society.
139(2), 579-583.
-
KUO, Y.
(1992).
REACTIVE ION ETCHING TECHNOLOGY IN THIN-FILM-TRANSISTOR PROCESSING. IBM Journal of Research and Development.
36(1), 69-75.
-
Kuo, Y.
(1991).
A New Process Using Two PhotoMasks to Prepare Trilayer Thin Film Transistors. Journal of Electrochemical Society.
138(2), 637-638.
-
KUO, Y.
(1990).
FACTORS AFFECTING THE MOLYBDENUM LINE SLOPE BY REACTIVE ION ETCHING. Journal of Electrochemical Society.
137(6), 1907-1911.
-
KUO, Y.
(1990).
REACTIVE ION ETCHING OF PECVD AMORPHOUS-SILICON AND SILICON-NITRIDE THIN-FILMS WITH FLUOROCARBON GASES. Journal of Electrochemical Society.
137(4), 1235-1239.
-
Kuo, Y., & Crowe, J. R.
(1989).
Factors Affecting Reactive Ion Etching Of Corning 7059 Glass. Proceedings of SPIE.
1037, 103-109.
-
Kuo, Y.
(1989).
Thin Film Technologies In Active Matrix Addressing System Of LCDs. Proceedings of SPIE.
1117, 114-122.
-
Kuo, Y., & Crowe, J. R.
(1988).
Reactive Ion Etching Of A Multicomponent Glass Substrate. Proceedings of SPIE.
0945, 103-110.
-
KUO, Y., MUNSON, C. L., RIXEY, W. G., GARCIA, A. A., FRIERMAN, M., & KING, C. J.
(1987).
USE OF ADSORBENTS FOR RECOVERY OF ACETIC-ACID FROM AQUEOUS-SOLUTIONS .1. FACTORS GOVERNING CAPACITY. Separation and Purification Methods.
16(1), 31-64.
-
MUNSON, C. L., GARCIA, A. A., KUO, Y., FRIERMAN, M., & KING, C. J.
(1987).
USE OF ADSORBENTS FOR RECOVERY OF ACETIC-ACID FROM AQUEOUS-SOLUTIONS .2. FACTORS GOVERNING SELECTIVITY. Separation and Purification Methods.
16(1), 65-89.
-
FRIERMAN, M., KUO, Y., JOSHI, D., GARCIA, A. A., & KING, C. J.
(1987).
USE OF ADSORBENTS FOR RECOVERY OF ACETIC-ACID FROM AQUEOUS-SOLUTIONS .3. SOLVENT REGENERATION. Separation and Purification Methods.
16(1), 91-102.
-
Kuo, Y., Munson, C. L., Frierman, M., & King, C. J.
(1985).
USE OF ADSORBENTS FOR RECOVERY OF ACETIC ACID FROM AQUEOUS SOLUTIONS. Reactive Polymers, Ion Exchangers, Sorbents.
6(1), 52.
-
KUO, Y.
(1984).
EXSORPTION - A NEW, SEPARATION PROCESS. Chemical Engineering Progress.
80(12), 37-42.
-
KUO, Y., & GREGOR, H. P.
(1983).
ACETIC-ACID EXTRACTION BY SOLVENT MEMBRANE. Separation Science and Technology.
18(5), 421-440.
-
KUO, W., & KUO, Y.
(1983).
FACING THE HEADACHES OF EARLY FAILURES - A STATE-OF-THE-ART REVIEW OF BURN-IN DECISIONS. Proceedings of the Institute of Electrical and Electronics Engineers (IEEE).
71(11), 1257-1266.
-
Kuo, Y.
(2023).
Pulsed Rapid Thermal Annealing as a Low Thermal Budget Semiconductor Fabrication Process. ECS Meeting Abstracts.
MA2023-01(29), 1776-1776.
-
conference paper
-
Su, J. Q., & Kuo, Y.
(2022).
Communication-Exploration of Plasma Oxidized Copper Oxide as a Copper Passivation Layer. ECS Journal of Solid State Science and Technology.
035005-035005.
-
Lin, W., & Kuo, Y.
(2021).
Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric. ECS Journal of Solid State Science and Technology.
126001-126001.
-
Shukla, A., & Kuo, Y.
(2020).
Study of Electrothermal Characteristics and Emitted Light Characteristics of SSI-LED. ECS Journal of Solid State Science and Technology.
065017-065017.
-
Kuo, Y., & Zhang, S.
(2019).
Communication-Co-Planar Structured Nano-Resistor Devices. ECS Journal of Solid State Science and Technology.
Q223-Q225.
-
Li, M., Su, J. Q., & Kuo, Y.
(2019).
Capping Layer Effect on Lifetime of Plasma Etched Copper Lines. ECS Transactions.
87-92.
-
Kuo, Y.
(2019).
Co-Planar Nano-Resistor Devices. ECS Transactions.
71-76.
-
Su, J. Q., Li, M., & Kuo, Y.
(2019).
Lifetime of Plasma Etched Copper Lines. ECS Transactions.
65-72.
-
Kuo, Y.
(2019).
Nano-resistor Based Devices Effects of Size, Structure, and Performance. ECS Transactions.
171-176.
-
Kuo, Y.
(2019).
Preface. ECS Transactions.
III-IV.
-
Kuo, Y.
(2018).
Progress of Thin Film Transistor Technology. 1231-1234.
-
Jiang, J., Kuo, Y., Chang, T., & Chiang, H.
(2018).
Illumination Light Wavelength Effects on Double-Gate a-IGZO Thin Film Transistor with Top-Gate-to-Source/Drain Offset Structure. ECS Transactions.
147-152.
-
Li, M., & Kuo, Y.
(2018).
ELECTROMIGRATION OF PLASMA ETCHED COPPER LINES OF VARIOUS WIDTHS AND LENGTHS. ECS Transactions.
41-47.
-
Zhang, S., & Kuo, Y.
(2018).
Enhancement of SSI-LED Light Emission by Embedding CdS in the Zr-doped HfO2 High-k Film. ECS Transactions.
53-58.
-
Gao, B., Gao, Y., Kuo, Y., & Yuan, T.
(2018).
PLASMA-BASED COPPER ETCH PROCESS AND RELIABILITY. ECS Transactions.
165-170.
-
Kuo, Y.
(2018).
Preface. ECS Transactions.
iii-iv.
-
Zhang, S., Kuo, Y., & Zhang, X.
(2017).
Substrate Effect on Light Emission of SSI-LEDs. ECS Transactions.
191-197.
-
Henry, K., & Kuo, Y.
(2017).
Effect of Incident Light Direction and Metallic Reflector Layer on Light Sensing of Amorphous Silicon Pin Diodes. ECS Transactions.
1753-1759.
-
Kuo, Y.
(2017).
Multifunctional Amorphous Metal Oxide Thin Films - Structure Transformation for Various Functions. ECS Transactions.
21-29.
-
Zhang, S., & Kuo, Y.
(2017).
Failure Mechanism of Nano-Resistor Devices. ECS Transactions.
79-83.
-
Zhang, S., & Kuo, Y.
(2017).
Resistivity and Barrier Height of Nano-Resistors Made from Zr-Doped HfO2 High-k Dielectric on Si Wafer. ECS Transactions.
63-68.
-
Zhang, S., & Kuo, Y.
(2017).
Narrowing of Broad Band Light Emitted from a SSI-LED. ECS Transactions.
17-22.
-
Zhang, S., & Kuo, Y.
(2016).
Nonvolatile Memory Characteristics of CdS Embedded Zr-Doped HfO2 High-k Dielectric MOS Capacitors. ECS Transactions.
11-17.
-
Henry, K., & Kuo, Y.
(2016).
Effect of n(+) Layer Deposition Power on Light Sensing of pin Amorphous Silicon Diodes. ECS Transactions.
33-39.
-
Kim, K., & Kuo, Y.
(2016).
Light Sensing of a-Si:H pin diode - Wavelength and Intensity Effects. ECS Transactions.
15-20.
-
Zhang, S., & Kuo, Y.
(2016).
Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO2 MOS Memory Device. ECS Journal of Solid State Science and Technology.
Q231-Q238.
-
Kuo, Y.
(2015).
(Invited) A Metal Oxide Antifuse-Diode Device. ECS Transactions.
23-29.
-
Zhang, S., Kuo, Y., & Verkhoturov, S.
(2015).
Post Deposition Annealing Atmosphere Effect on SSI-LEDs Made of Zr-Doped HfO2 High-k Gate Dielectric. ECS Transactions.
17-22.
-
Kuo, Y.
(2015).
Principles and Possible System-on-Wafer Applications of SSI-LEDs. 9-12.
-
Kuo, Y.
(2015).
(Invited) A Diode-Like Antifuse Device Made of High-K Dielectric. ECS Transactions.
183-189.
-
Kuo, Y.
(2015).
(Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology) Research on Nano and Giga Electronics Breakthroughs Along the Path. ECS Transactions.
139-154.
-
Zhang, S., & Kuo, Y.
(2015).
(Invited) Temperature Influence on Current Leakage and Hysteresis of Nc-CdSe Embedded Zr-Doped HfO2 High-k Dielectric Nonvolatile Memory. ECS Transactions.
195-202.
-
Zhang, S., & Kuo, Y.
(2015).
Solid State Incandescent Light Emitting Device Made of WOx Embedded Zr-Doped HfO2 High-k Stack on Si. ECS Transactions.
223-228.
-
Lin, C., Kuo, Y., & Zhang, X.
(2015).
White-Light Emission SSI-LED Made of Sputter Deposited TiOx Thin Film on Si Wafer. ECS Transactions.
1-6.
-
Kuo, Y.
(2014).
A Solid State Thin Film Incandescent Light Emitting Device. 4.7.1-4.7.4.
-
Lin, C., & Kuo, Y.
(2014).
Post Deposition Annealing Temperature Effect on White-Light Emitting of WOx Thin Film Stack on Si. ECS Transactions.
1-6.
-
Zhang, S., & Kuo, Y.
(2014).
Temperature Effect on Memory Functions of the nc-CdSe Embedded ZrHfO High-k MOS Device. ECS Transactions.
123-129.
-
Kuo, Y., & Chang, G. W.
(2014).
Thin Film Transistors As Driving Devices for Attached Devices. ECS Transactions.
145-153.
-
Kim, K., & Kuo, Y.
(2014).
P+ layer effects on a-Si:H solar cell performance. 3055-3059.
-
Liu, X. i., Kuo, Y., Zhang, S., & Yuan, T.
(2014).
Light Wavelength Effects on Charge Trapping and Detrapping of AlOx Embedded ZrHfO High-k Stack. ECS Transactions.
169-175.
-
Lin, C., & Kuo, Y.
(2014).
White-light emission from amorphous ZrHfO thin film dielectrics with and without embedded nanocrystalline CdSe dots. ECS Transactions.
55-60.
-
Kim, K., & Kuo, V.
(2014).
p(+) layer effects on a-Si:H solar cell performance. 3055-3059.
-
Kuo, Y., & Lin, C.
(2014).
A Solid-State Incandescent Device for Single-Chip White-Light Emission. Optics InfoBase Conference Papers.
-
Kuo, Y., & Lin, C. C.
(2014).
A solid-state incandescent device for single-chip white- light emission
-
Zhang, S., Kuo, Y., Liu, X. i., & Lin, C.
(2014).
Nonvolatile memories based on AlOx embedded ZrHfO high-k gate dielectric. MRS Online Proceedings Library.
mrss14-1691-bb10-04.
-
Lin, C., & Kuo, Y.
(2014).
Post Deposition Annealing Temperature Effect on White-light Emitting of Sputter Deposited Zr-doped HfO2 Thin Film. MRS Online Proceedings Library.
mrss14-1698-ii08-20.
-
Kuo, Y., & Professor, D.
(2014).
Preface. ECS Transactions.
iii.
-
Lee, I., & Kuo, Y.
(2013).
Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n +, and p + amorphous silicon thin films. MRS Advances.
133-138.
-
Kuo, Y.
(2013).
Progress of Thin Film Transistor Technology - Large-Area Mass Production and Beyond. 5-8.
-
Lin, C., & Kuo, Y.
(2013).
CdSe Embedded ZrHfO Gate Dielectric Nonvolatile Memories - Charge Trapping and Breakdown Studies. ECS Transactions.
109-113.
-
Lin, C., & Kuo, Y.
(2013).
Light wavelength effect on tungsten oxide dielectric properties. ECS Transactions.
259-263.
-
Kuo, Y.
(2013).
Metal Oxide High-k Thin Films - from Gate Dielectrics to Nonvolatile Memories to LEDs. ECS Transactions.
273-281.
-
Kuo, Y.
(2013).
Nanocrystals Embedded High-k Nonvolatile Memories - Bulk Film and Nanocrystal Material Effects. ECS Transactions.
121-128.
-
Liu, X. i., Kuo, Y., & Yuan, T.
(2013).
Exposure Light Wavelength Effects on Charge Trapping and Detrapping of nc-MoOx Embedded ZrHfO High-k Stack. MRS Online Proceedings Library.
mrss13-1562-dd10-05-cc06-05.
-
Lin, C., & Kuo, Y.
(2013).
Nonvolatile memory MOS capacitors made of CdSe embedded ZrHfO high-k gate dielectric. MRS Online Proceedings Library.
mrss13-1562-dd05-01.
-
Kuo, Y., Liu, X. i., Yang, C., & Lin, C.
(2012).
Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-k Film - Device Performance and Light Wavelength Effects. MRS Online Proceedings Library.
mrss12-1430-e01-10-27.
-
Lin, C., & Kuo, Y.
(2012).
Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism. MRS Advances.
mrss12-1428-c05-03-20.
-
Wu, S., Kuo, Y., & Lin, C.
(2012).
Light Wavelength Effects on Performance of a-Si:H PIN Photodiodes. MRS Online Proceedings Library.
199-204.
-
Kuo, Y., & Lin, C.
(2012).
Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing Intrinsic a-Si Film Thickness Effect. MRS Advances.
269-274.
-
Kuo, Y., Lin, C., & Verkhoturov, S.
(2012).
Crystallization of a-Si Thin Film Using an Ultra Thin n(+) Poly-Si Seed Layer for Solar Cell Applications. Conference Record IEEE Photovoltaic Specialists Conference.
000342-000345.
-
Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.
(2012).
Nanocrystalline MoOx Embedded ZrHfO High-k Memories - Charge Trapping and Retention Characteristics. ECS Transactions.
203-209.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2011).
Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices. MRS Advances.
108-33.
-
Luo, B., Lin, C., & Kuo, Y.
(2011).
Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-k MOS Nonvolatile Memories. ECS Transactions.
93-100.
-
Kuo, Y.
(2011).
Nonvolatile Memories for Nano and Giga Electronics. ECS Transactions.
157-166.
-
Lin, C., & Kuo, Y.
(2011).
Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films. ECS Transactions.
249-255.
-
Kuo, Y.
(2011).
Status Review of Nanocrystals Embedded High-k Nonvolatile Memories. ECS Transactions.
13-31.
-
Zhu, M., Kuo, Y., Lin, C., & Wang, Q. i.
(2011).
Poly-Si Thin Film Formation Using a Novel Low Thermal Budget Process. MRS Advances.
mrss11-1321-a03-05-172.
-
Kuo, Y., & Coan, M.
(2010).
Influence of Embedded a-Si:H Layer Location on Floating-gate a-Si:H TFT Memory Functions. MRS Online Proceedings Library.
249-255.
-
Lin, C. H., & Kuo, Y.
(2010).
Charge trapping sites in nc-RuO embedded ZrHfO high-K nonvolatile memories. MRS Online Proceedings Library.
47-53.
-
Kuo, Y.
(2010).
ECS Transactions: Preface. ECS Transactions.
-
Kuo, Y.
(2010).
Mechanism and Performance of Floating-Gate a-Si:H TFT Nonvolatile Memory Devices. ECS Transactions.
357-364.
-
Kuo, Y.
(2010).
Performance and Reliability of Nanocrystals Embedded High-k Nonvolatile Memories. ECS Transactions.
425-430.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2010).
Stress-Induced Deterioration of Nanocrystalline ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
307-311.
-
Lin, C., Yang, C., & Kuo, Y.
(2010).
Hole-Trapping Mechanism and SILC of Dual-Layer nc-ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
269-276.
-
Kuo, Y., Lin, C., & Zhu, M.
(2010).
A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION. Conference Record IEEE Photovoltaic Specialists Conference.
3698-3701.
-
Kuo, Y.
(2009).
ECS Transactions: Preface. ECS Transactions.
-
Mascher, P., Joshi, P., Overberg, M. E., & Kuo, Y.
(2009).
ECS Transactions: Preface. ECS Transactions.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures. MRS Online Proceedings Library.
25-+.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Failure Analysis of Single and Dual nc-ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
457-464.
-
Kuo, Y.
(2009).
A-Si:H TFT Nonvolatile Memories and Copper Interconnect for Rigid and Flexible Electronics. ECS Transactions.
183-190.
-
Lin, C., & Kuo, Y.
(2009).
Single and Dual nc-ITO and nc-ZnO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
81-87.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics. ECS Transactions.
41-+.
-
Kuo, Y., & Nominanda, B.
(2009).
Charge and discharge of floating-gate amorphous silicon thin-film transistor nonvolatile memories. Journal of the Korean Physical Society.
409-414.
-
Kuo, Y.
(2008).
ECS Transactions: Preface. ECS Transactions.
-
Liu, G., & Kuo, Y.
(2008).
Electromigration of Cu interconnect lines prepared by a plasma-based etch process. MRS Online Proceedings Library.
89-94.
-
Kuo, Y., & Nominanda, H.
(2008).
Floating-Gate a-Si:H TFT Nonvolatile Memories. MRS Online Proceedings Library.
231-239.
-
Yang, C., Kuo, Y., Lin, C., Wan, R., & Kuo, W.
(2008).
Relaxation behavior and breakdown mechanisms of nanocrystals embedded Zr-doped HfO2 high-k thin films for nonvolatile memories. MRS Online Proceedings Library.
35-+.
-
Lin, C., & Kuo, Y.
(2008).
Embedding of Nanocrystalline Ruthenium in ZrHfO High-k Film for Nonvolatile Memories. ECS Transactions.
465-470.
-
Lin, C., & Kuo, Y.
(2008).
Mechanisms of Charge Storage in nc-RuO Embedded ZrHfO High-k Films. ECS Transactions.
309-316.
-
Kuo, Y., Coan, M. R., & Liu, G.
(2008).
Reliability of a-Si:H TFTs and Copper Interconnect Lines for Flexible Electronics. ECS Transactions.
345-351.
-
Yang, C., Kuo, Y., Wan, R., Lin, C., & Kuo, W.
(2008).
Failure analysis of nanocrystals embedded high-k dielectrics for nonvolatile memories. IEEE International Reliability Physics Symposium Proceedings.
46-+.
-
Kuo, Y., & Nominanda, H.
(2007).
Amorphous silicon based TFT and MIS nonvolatile memories. MRS Online Proceedings Library.
225-230.
-
Kuo, Y., Ast, D. G., & Shur, M.
(2007).
ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT: Preface. ECS Transactions.
-
Kuo, Y.
(2007).
TFTs beyond LCD pixel driving and experience for 45 mm ULSIC process development. 209-212.
-
Wan, R., Lin, C., Kuo, Y., & Kuo, W.
(2007).
Charge trapping of ultra-thin ZrHfOx/RuOx/ZrHfOx high-k stacks. 99-+.
-
Lu, J., Lin, C., & Kuo, Y.
(2007).
Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide Thin Films. ECS Transactions.
509-518.
-
Nominanda, H., Kuo, Y., Chen, C., & Hwang, C.
(2007).
Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors. ECS Transactions.
261-266.
-
Kuo, Y.
(2007).
ULSIC vs. TFT - What Can They Learn from Each Other?. ECS Transactions.
45-50.
-
Kuo, Y.
(2007).
ELECTRONICS AND PHOTONICS DIVISION AWARD ADDRESS: Thin Film Transistor and ULSIC Technologies - Parallel or Crossing?. ECS Transactions.
121-132.
-
Lin, C., Kuo, Y., & Lu, J.
(2007).
Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film. ECS Transactions.
121-127.
-
Kuo, Y.
(2006).
ECS Transactions: Preface. ECS Transactions.
-
Kuo, Y., & Nominanda, H.
(2006).
Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure. ECS Transactions.
333-339.
-
Kuo, Y., Birge, A., & Lin, C.
(2006).
Indium-Tin-Oxide Embedded in Zirconium-Doped Hafnium Oxide High-k Dielectric Films for Hole-Based Nonvolatile Memories. ECS Transactions.
193-201.
-
Kuo, Y.
(2006).
Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and Memories. ECS Transactions.
253-263.
-
Kuo, Y., & Lu, J.
(2006).
Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films. ECS Transactions.
177-183.
-
Kuo, Y., & Liu, G.
(2006).
Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper. ECS Transactions.
169-176.
-
Kuo, Y.
(2006).
Mixed oxides as high-k gate dielectric films. ECS Transactions.
13-22.
-
Kuo, Y., Lu, J., Yan, J., Yuan, T., Kim, H. C., Peterson, J., ... Luo, W.
(2006).
Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics. ECS Transactions.
447-454.
-
Kuo, Y., Lu, J., & Nominanda, H.
(2006).
Sputter deposition of nm-thick films for passivation of organic pellicles. Vacuum.
698-703.
-
Kuo, Y., Lu, J., Yan, J., & Lin, C.
(2006).
A Novel Hole-Based Memory Device Fabricated from Nano ITO Embedded High-k Thin Films. 469-472.
-
Kuo, Y., Nominanda, H., & Liu, G. J.
(2006).
n-channel and p-channel a-Si : H thin-film transistors with copper electrodes. Journal of the Korean Physical Society.
S92-S97.
-
Kuo, Y., & Lee, H. H.
(2005).
A novel TFT-driven microchannel electrophoresis device for proteins separation and identification. 270-276.
-
Ahmed, S., Buckley, D. N., Nakahara, S., & Kuo, Y.
(2005).
Effect of temperature on incubation time for spontaneous morphology change in electrodeposited copper metallization. MRS Online Proceedings Library.
209-214.
-
Lei, Y., Kuo, Y., & Nominanda, H.
(2005).
Hydrogenated amorphous silicon bipolar junction thin film transistors (a-Si:H B-TFTs). 277-283.
-
Kuo, Y.
(2005).
Proceeding - Electrochemical Sciety: Preface
-
Goyal, A., Wong-Ng, W., Kuo, Y., & Leonte, O.
(2005).
Proceedings - Electrochemical Society: Preface
-
Chatterjee, S., Kuo, Y., Lu, J., Tewg, J. Y., & Majhi, P.
(2005).
Effects of post metallization annealing on the electrical reliability of ultra-thin HfO(2) films with MoN and WN gate electrodes. IEEE International Reliability Physics Symposium Proceedings.
626-627.
-
Lu, J., Tewg, J. Y., & Kuo, Y.
(2004).
Engineering the nm-thick interface layer formed between a high-k film and silicon. MRS Online Proceedings Library.
81-86.
-
Kuo, Y., & Lei, Y.
(2004).
Fabrication and characterization of hydrogenated amorphous silicon bipolar thin film transistor (B-TFT). MRS Online Proceedings Library.
709-714.
-
Tewg, J. Y., & Kuo, Y.
(2004).
Influence of the 5 A TaNx interface layer on dielectric properties of the Zr-doped TaOX high-k film. 25-35.
-
Nominanda, H., Liu, G. J., Lee, H. H., & Kuo, Y.
(2004).
The p-channel a-Si : H thin film transistor with plasma etched copper electrodes. MRS Online Proceedings Library.
667-672.
-
Luo, W., Kuo, W., & Kuo, Y.
(2004).
Bayesian approach to reliability projection for high k dielectric thin films. 186-187.
-
Lu, J., & Kuo, Y.
(2004).
Electrical and material characteristics of the sub 5 nm hafnium doped tantalum oxide high K film. 389-391.
-
Tewg, J. Y., Lu, J., Kuo, Y., & Schueler, B.
(2003).
Electrical and physical characterization of zirconium-doped tantalum oxide, films. 75-81.
-
Lu, J., Tewg, J. Y., Kuo, Y., & Liu, P. C.
(2003).
Hafnium-doped tantalum oxide high k dielectrics. 105-110.
-
Kuo, Y., Lu, J., Tewg, J. Y., & Zimmerman, P. A.
(2003).
Passivation of the 157 nm pellicle with nanometer thin films. Proceedings of SPIE.
195-198.
-
Kuo, Y., Chung, T. W., & Nominanda, H.
(2003).
Plasma hydrogenation - A new method of reducing the k value of the low k polyimide film. MRS Online Proceedings Library.
333-338.
-
Luo, W., Sunardi, D., Ku, Y., & Kuo, W.
(2003).
Stress testing and characterization of high-k dielectric thin films. 18-23.
-
Kuo, Y., Nominanda, H., Ristova, M., Lee, H. H., & Tewg, J. Y.
(2003).
Boron-doped A-Si : H thin film deposition process and applications in P-channel thin film transistor and photodiode for He-Ne laser light detection. 292-300.
-
Lee, S., & Kuo, Y.
(2002).
Copper fine patterns etched with HBr plasma based processes. 299-304.
-
Nominanda, H., & Kuo, Y.
(2002).
Process and material properties of PECVD boron-doped amorphous silicon films. 1-9.
-
Lee, H. H., & Kuo, Y.
(2002).
A New Microchannel Device for Proteins Separation and Identification. 454-459.
-
Kuo, Y., Lu, J., Liu, P. C., Daby, F. M., & Tewg, J. Y.
(2002).
Influence of the nanometer thick interface layer to electrical properties of the 10nm doped metal oxide high k dielectrics. Proceedings of the ... IEEE Conference on Nanotechnology / co-sponsored by IEEE Robotics and Automation Society (RAS) ... [et al.]. IEEE Conference on Nanotechnology.
251-253.
-
Kuo, Y., & Lee, H. H.
(2001).
A new microchannel device for proteins separation and detection. Proceedings of SPIE.
102-107.
-
Kuo, Y., & Lee, S.
(2000).
A new copper dry etching process. 328-335.
-
Kuo, Y.
(1999).
Hydrogenation of amorphous silicon thin film transistors. 191-197.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Jenkins, L., ... Wright, S.
(1998).
High Conductivity Gate Metallurgy for Tft/Lcd's. MRS Online Proceedings Library.
37-46.
-
Kuo, Y.
(1998).
Reactive ion etching of indium tin oxide - HBr chemistry. 197-202.
-
Kuo, Y.
(1998).
Critical plasma process issues in the fabrication of thin film transistor liquid crystal displays. IEEE International Conference on Plasma Science.
213.
-
Kuo, Y., & Latzko, K.
(1998).
Deposition of richly conductive n(+) silicon film for a-Si : H thin film transistor. MRS Online Proceedings Library.
891-896.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Jenkins, L., ... Wright, S.
(1998).
High conductivity gate metallurgy for TFT/LCD's. MRS Online Proceedings Library.
37-46.
-
Lioutas, C. B., Vouroutzis, N., Paloura, E. C., & Kuo, Y.
(1997).
Electron beam induced damage in N-rich SiNx films deposited by plasma enhanced chemical vapour deposition. THIN SOLID FILMS.
28-31.
-
Kuo, Y.
(1995).
Thin film transistors with layered a-Si:H structure. MRS Online Proceedings Library.
701-706.
-
PALOURA, E. C., KUO, Y., & BRAUN, W.
(1995).
ON THE EFFECT OF BONDED HYDROGEN IN THE LOCAL MICROSTRUCTURE OF PECVD SINX-H FILMS. Physica B: Condensed Matter.
562-564.
-
KUO, Y.
(1994).
REACTIVE ION ETCHING PROCESSES FOR AMORPHOUS-GERMANIUM ALLOYS. MRS Online Proceedings Library.
1041-1046.
-
Kuo, Y.
(1992).
Large Area Plasma Enhanced Chemical Vapor Deposition of Nonstoichiometric Silicon Nitride. MRS Online Proceedings Library.
623-629.
-
KUO, Y.
(1991).
A NEW THIN-FILM TRANSISTOR STRUCTURE AND ITS PROCESSING METHOD FOR LIQUID-CRYSTAL DISPLAYS. Proceedings of SPIE.
288-299.
-
KUO, Y.
(1990).
CHARACTERIZATION OF INDIUM TIN OXIDE AND REACTIVE ION ETCHED INDIUM TIN OXIDE SURFACES. Japanese Journal of Applied Physics.
2243-2246.
-
KUO, Y.
(1990).
REACTIVE ION ETCHING OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION AMORPHOUS-SILICON AND SILICON-NITRIDE - FEEDING GAS EFFECTS. Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.
1702-1705.
-
KUO, Y., & CROWE, J. R.
(1990).
SLOPE CONTROL OF MOLYBDENUM LINES ETCHED WITH REACTIVE ION ETCHING. Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.
1529-1532.
-
Kuo, Y.
(1987).
PLANARIZATION OF MULTILEVEL METALIZATION PROCESSES: A CRITICAL REVIEW. . Proceedings of SPIE.
49-60.
-
Kuo, Y.
(1987).
THEORETICAL STUDY OF THE ETCHBACK PLANARIZATION PROCESS. MRS Online Proceedings Library.
209-214.
-
Kuo, Y.
(1984).
EXSORPTION - A CONCEPTUAL STUDY OF A PROPOSED NEW SEPARATION PROCESS
-
Kuo, Y., & Gregor, H. P.
(1983).
Diffusional mass transfer through solvent membrane by facilitated transport - Experiment. Preprints- American Chemical Society Division of Petroleum Chemistry.
757.
-
Kuo, Y., & Gregor, H. P.
(1983).
DIFFUSIONAL MASS TRANSFER THROUGH SOLVENT MEMBRANE BY FACILITATED TRANSPORT - EXPERIMENT. Preprints- American Chemical Society Division of Petroleum Chemistry.
757.
-
KUO, Y., & GREGOR, H. P.
(1983).
DIFFUSIONAL MASS-TRANSFER THROUGH SOLVENT MEMBRANE BY FACILITATED TRANSPORT - EXPERIMENT. ACS National Meeting Book of Abstracts.
72-PETR.
-
Su, J. Q., & Kuo, Y.
(2022).
Communication-Exploration of Plasma Oxidized Copper Oxide as a Copper Passivation Layer. ECS Journal of Solid State Science and Technology.
035005-035005.
-
patent
Research
principal investigator on
Teaching
teaching activities
- CHEN320 Chen Analysis Instructor
- CHEN364 Kinetics & Reactor Design Instructor
- CHEN433 Chemical Engr Lab Ii Instructor
- CHEN464 Kinetics & Reactor Design Instructor
- CHEN475 Microelectron Proc Engr Instructor
- CHEN481 Seminar Instructor
- CHEN491 Hnr-research Instructor
- CHEN675 Microelectron Proc Engr Instructor
- CHEN685 Directed Studies Instructor
- CHEN691 Research Instructor
- ECEN691 Research Instructor
- MSEN684 Professional Internship: In-ab Instructor
- MSEN691 Research Instructor
Works By Students
chaired theses and dissertations
-
Henry, Kai Patrick (2016-11). Light Sensing Performance of Amorphous Silicon Thin Film Pin Diodes: Structure, Incident Light, and Plasma Deposition Effects.
-
Kim, Kibum (2017-04). Light Sensing Property of Amorphous Silicon Thin Film pin Diode: Solar Cell and Photodiode.
-
Lee, Hyun Ho (2005-02). A thin film transistor driven microchannel device.
-
Lee, I-Syuan (2014-05). Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon.
-
Lin, Chen-Han (2012-10). Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.
-
Lin, Chi-Chou (2014-09). High-K Based Non-Volatile Memory Devices with the Light Emitting Application.
-
Liu, Guojun (2009-05). Process and reliability assessment of plasma-based copper etch process.
-
Lu, Jiang (2007-04). Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology.
-
Luo, Wen (2006-04). Reliability characterization and prediction of high k dielectric thin film.
-
Nominanda, Helinda (2008-10). Amorphous silicon thin film transistor as nonvolatile device..
-
Tewg, Jun-Yen (2005-02). Zirconium-doped tantalum oxide high-k gate dielectric films.
-
Wu, Shu-Hsien (2013-04). Light Effects on the Charge Storage in the A-SI:H Pin Diode.
Background
education and training
- Ph.D. in Engineering Science, Columbia University - (New York, New York, United States) 1979
awards and honors
- Special Recognition Award, conferred by Society for Information Display - (Campbell, California, United States), 2023
- Holder of the Dow Professorship, conferred by Texas A&M University - (College Station, Texas, United States), 2020
- Fellow, conferred by Materials Research Society - (Pittsburgh, Pennsylvania, United States), 2019
- Invitational Fellowship, conferred by Japan Society for the Promotion of Science - (Tokyo, Japan), 2017
- Honorary Chair Professor, conferred by National Chiao Tung University - (Hsinchu, Taiwan), 2017
- Fellow of the Society, conferred by American Vacuum Society - (New York, New York, United States), 2016
- Gordon E Moore Medal for Outstanding Achievement in Solid State Science and Technology, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 2015
- TEES Fellow, conferred by Texas A&M University - (College Station, Texas, United States), 2015
- Technology Commercialization Innovation Award, conferred by Texas A&M University System - (College Station, Texas, United States), 2014
- Association of Former Students University-Level Distinguished Achievement Award, The, conferred by Texas A&M University - (College Station, Texas, United States), 2012
- Electronics and Photonics Division Award, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 2007
- Fellow, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 1999
- Fellow, conferred by Institute of Electrical and Electronics Engineers - (Piscataway, New Jersey, United States), 1999
Contact
first name
- Yue
has last name
- Kuo
mailing address
-
Texas A&M University
Chemical Engineering
3122 TAMU
College Station, TX 77843-3122
USA
Other
In the News
- Committing to Solving Humanity's Grand Challenges News Release
- yuekuo@tamu.edu