HR job title
- Professor
- Contact Info
- 1 979 845 9807
Kuo, Yue Professor
Positions
- Professor, Chemical Engineering, College of Engineering
- Faculty Affiliate, Energy Institute, Texas A&M Engineering Experiment Station (TEES)
- Overview
- Publications
- Research
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- Works By Students
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Overview
Publications
selected publications
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academic article
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Chen, Y., Yuan, T., Bae, S. J., & Kuo, Y.
(2021).
Two-level differential burn-in policy for spatially heterogeneous defect units in semiconductor manufacturing. Computers & Industrial Engineering.
162, 107768-107768.
-
Fan, W., Liu, P., Kuo, P., Chang, C., Liu, I., & Kuo, Y.
(2021).
Numerical Analysis of Oxygen-Related Defects in Amorphous In-W-O Nanosheet Thin-Film Transistor. Nanomaterials.
11(11), 3070-3070.
-
Su, J. Q., Li, M., & Kuo, Y.
(2020).
Metal Capping Layer Effects on Electromigration Failure Phenomena of Plasma Etched Copper Lines. ECS Journal of Solid State Science and Technology.
9(10), 104009-104009.
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Yuan, T., Bae, S. J., & Kuo, Y.
(2020).
Statistical Models of Overdispersed Spatial Defects for Predicting the Yield of Integrated Circuits. IEEE Transactions on Reliability.
69(2), 510-521.
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Liu, L., Wang, Y., Lin, Y., Zhang, X., & Kuo, Y.
(2020).
Si Wafer Dopant Concentration Effect on Light Emission of Solid State Incandescent Light Emitting Devices. ECS Journal of Solid State Science and Technology.
9(3), 036004-036004.
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Zhang, S., & Kuo, Y.
(2018).
Post Deposition Annealing Atmosphere Effect on Performance of Solid State Incandescent Light Emitting Device. ECS Journal of Solid State Science and Technology.
7(1), R3023-R3029.
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Zhang, S., & Kuo, Y.
(2018).
Memory Functions of Cadmium Sulfide Embedded Zr-Doped HfO2High-k Dielectrics. ECS Journal of Solid State Science and Technology.
7(5), Q97-Q103.
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Zhang, S., & Kuo, Y.
(2018).
Electrical properties of nano-resistors made from the Zr-doped HfO2high-kdielectric film. JOURNAL OF PHYSICS D-APPLIED PHYSICS.
51(9), 09LT02-09LT02.
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Chen, T., Kuo, Y., Chang, T., Chen, M., & Chen, H.
(2017).
Stability of double gate amorphous InGaZnO thin-film transistors with various top gate designs. Japanese Journal of Applied Physics.
56(12), 120303-120303.
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Chen, T., Kuo, Y., Chang, T., Chen, M., & Chen, H.
(2017).
Mechanism of a-IGZO TFT device deteriorationillumination light wavelength and substrate temperature effects. JOURNAL OF PHYSICS D-APPLIED PHYSICS.
50(42), 42LT02-42LT02.
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Zhang, S., & Kuo, Y.
(2017).
CommunicationFiltration of Light Emitted from Solid State Incandescent Light Emitting Devices. ECS Journal of Solid State Science and Technology.
6(4), Q39-Q41.
-
Kim, K., & Kuo, Y.
(2017).
Influence of pin Amorphous Silicon Stack Deposition Sequence on Solar Cell Performance and Degradation. ECS Journal of Solid State Science and Technology.
6(1), Q29-Q33.
-
Lin, C., & Kuo, Y.
(2016).
Light Emission Enhancement by Embedding Nanocrystalline Cadmium Selenide in Amorphous ZrHfO High-k Dielectric Thin Film Deposited on Silicon Wafer. ECS Journal of Solid State Science and Technology.
5(3), Q75-Q80.
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Zhang, S., & Kuo, Y.
(2016).
Temperature Effect on Dielectric Breakdown and Charges Retention of Nanocrystalline Cadmium Selenide Embedded Zr-Doped HfO2 High- ${k}$ Dielectric Thin Film. IEEE Transactions on Device and Materials Reliability.
16(4), 561-569.
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Li, D., Kim, K., Zhang, S., Dong, G., & Kuo, Y.
(2015).
High-performance organicinorganic hybrid optocouplers based on organic light-emitting diodes and a-Si:H photodiodes. Sensors and Actuators A: Physical.
236, 364-368.
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Kuo, Y.
(2015).
A Solid-State Thin-Film Incandescent Light-Emitting Device. IEEE Transactions on Electron Devices.
62(11), 3536-3540.
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Lin, C., & Kuo, Y.
(2015).
Light emission from conductive paths in nanocrystalline CdSe embedded Zr-doped HfO2 high-k stack. Applied Physics Letters.
106(12), 121107-121107.
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Kuo, Y., & Furuta, M.
(2014).
Introduction to the Focus Issue on Oxide Thin Film Transistors. ECS Journal of Solid State Science and Technology.
3(9), Y5-Y5.
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Lin, C., & Kuo, Y.
(2014).
Factors Affecting Light Emission from Solid State Incandescent Light Emitting Devices with Sputter Deposited Zr-Doped HfO2Thin Films. ECS Journal of Solid State Science and Technology.
3(10), Q182-Q189.
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Lin, C., Kuo, Y., & Zhang, S.
(2014).
Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.
32(3), 03D116-03D116.
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Yuan, T., Liu, X. i., Ramadan, S. Z., & Kuo, Y.
(2014).
Bayesian Analysis for Accelerated Life Tests Using a Dirichlet Process Weibull Mixture Model. IEEE Transactions on Reliability.
63(1), 58-67.
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Lin, C., & Kuo, Y.
(2014).
Memory functions of nanocrystalline cadmium selenide embedded ZrHfO high-kdielectric stack. Journal of Applied Physics.
115(8), 084113-084113.
-
Lin, C., & Kuo, Y.
(2014).
White light emission from ultrathin tungsten metal oxide film. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.
32(1), 011208-011208.
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Kuo, Y., & Lin, C.
(2013).
Micro light emitting device prepared from sputter deposited thin hafnium oxide film. Solid-State Electronics.
89, 120-123.
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Lin, C., & Kuo, Y.
(2013).
Temperature Effects on Nanocrystalline Molybdenum Oxide Embedded ZrHfO High-kNonvolatile Memory Functions. ECS Journal of Solid State Science and Technology.
2(1), Q16-Q22.
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Kuo, Y., & Lin, C.
(2013).
Electroluminescence from Metal Oxide Thin Films. ECS Solid State Letters.
2(8), Q59-Q61.
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Lin, C., & Kuo, Y.
(2013).
Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.
31(3), 030605-030605.
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Kuo, Y., & Lin, C.
(2013).
A light emitting device made from thin zirconium-doped hafnium oxide high-k dielectric film with or without an embedded nanocrystal layer. Applied Physics Letters.
102(3), 031117-031117.
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Kuo, Y.
(2013).
Thin Film Transistor Technology--Past, Present, and Future. Interface magazine.
22(1), 55-61.
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Yang, C., Yuan, T., Kuo, W., & Kuo, Y.
(2012).
Non-parametric Bayesian modeling of hazard rate with a change point for nanoelectronic devices. IIE Transactions.
44(7), 496-506.
-
Lin, C., & Kuo, Y.
(2012).
Electromigration study of copper lines on steps prepared by a plasma-based etch process. Journal of Applied Physics.
111(6), 064909-064909.
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Lin, C., & Kuo, Y.
(2012).
Process effects of copper film over a step etched with a plasma-based process. Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena.
30(2), 021204-021204.
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Lin, C., & Kuo, Y.
(2012).
Charge Trapping and Detrapping in nc-RuO Embedded ZrHfO High-k Thin Film for Nonvolatile Memory Applications. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
159(3), H214-H219.
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Flewitt, A. J., Kuo, Y., & Jang, J.
(2012).
Guest Editorial. Journal of Display Technology.
8(1), 5-6.
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Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.
(2012).
Memory Functions of Molybdenum Oxide Nanodots-Embedded ZrHfO High-k. ECS Electrochemistry Letters.
15(6), H192-H192.
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Birge, A., & Kuo, Y.
(2012).
Memory Functions of Nanocrystalline ITO Embedded Zirconium-Doped Hafnium Oxide High-kCapacitor with ITO Gate. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
159(6), H595-H598.
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Chatterjee, S., & Kuo, Y.
(2011).
Effects of interfacial charges on doped and undoped Hfo
x stack layer with TiN metal gate electrode for nano-scaled CMOS generation. Journal of Nano- and Electronic Physics. 3(1 PART1), 162-169.
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Lin, C., & Kuo, Y.
(2011).
Nanocrystalline ruthenium oxide embedded zirconium-doped hafnium oxide high-k nonvolatile memories. Journal of Applied Physics.
110(2), 024101-024101.
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Lin, C., & Kuo, Y.
(2011).
Ruthenium Modified Zr-Doped HfO2 High-k Thin Films with Low Equivalent Oxide Thickness. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
158(7), G162-G162.
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Lin, C., & Kuo, Y.
(2011).
Single- and Dual-Layer Nanocrystalline Indium Tin Oxide Embedded ZrHfO High-k Films for Nonvolatile Memories Material and Electrical Properties. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
158(8), H756-H756.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2011).
Temperature Influence on Nanocrystals Embedded High-k Nonvolatile CV Characteristics. ECS Electrochemistry Letters.
14(1), H50-H50.
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Yang, C., Kuo, Y., & Lin, C.
(2010).
Charge detrapping and dielectric breakdown of nanocrystalline zinc oxide embedded zirconium-doped hafnium oxide high-k dielectrics for nonvolatile memories. Applied Physics Letters.
96(19), 192106-192106.
-
Tao Yuan, .., & Yue Kuo.
(2010).
Bayesian Analysis of Hazard Rate, Change Point, and Cost-Optimal Burn-In Time for Electronic Devices. IEEE Transactions on Reliability.
59(1), 132-138.
-
Kuo, Y.
(2010).
Hysteresis of Transfer Characteristics of Floating-Gate a-Si:H Thin Film Transistor Nonvolatile Memories. ECS Electrochemistry Letters.
13(12), H460-H460.
-
Lin, C., & Kuo, Y.
(2010).
Nonvolatile Memories with Dual-Layer Nanocrystalline ZnO Embedded Zr-Doped HfO[sub 2] High-k Dielectric. ECS Electrochemistry Letters.
13(3), H83-H83.
-
Kuo, Y., & Nominanda, H.
(2009).
Charge and Discharge of Floating-Gate Amorphous Silicon Thin Film Transistor Nonvolatile Memories. Journal of the Korean Physical Society.
54(9(5)), 409-414.
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Liu, G., & Kuo, Y.
(2009).
Electromigration of Flat and Bent Copper Lines Patterned with a Plasma-Based Etch Process. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
156(7), H579-H579.
-
Lee, H. H., & Kuo, Y.
(2008).
Surface Modification of Gel-Free Microchannel Surface Electrophoresis Device for DNA Identification. Japanese Journal of Applied Physics.
47(4), 2300-2305.
-
Wan, R., Yan, J., Kuo, Y., & Lu, J.
(2008).
Dielectric Breakdown and Charge Trapping of Ultrathin ZrHfO/SiON High-kGate Stacks. Japanese Journal of Applied Physics.
47(3), 1639-1641.
-
Kuo, Y.
(2008).
Thin-Film Transistor and Ultra-Large Scale Integrated Circuit: Competition or Collaboration. Japanese Journal of Applied Physics.
47(3), 1845-1852.
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Liu, G., & Kuo, Y.
(2008).
Additive-Gas Effects on Cl[sub 2] Plasma-Based Copper-Etch Process and Sidewall Attack. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
155(2), H97-H97.
-
Liu, G., Kuo, Y., Ahmed, S., Buckley, D. N., & Tanaka-Ahmed, T.
(2008).
Grain-Size Effect on a Plasma-Based Copper Etch Process. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
155(6), H432-H432.
-
Lu, J., Lin, C., & Kuo, Y.
(2008).
Nanocrystalline Zinc-Oxide-Embedded Zirconium-Doped Hafnium Oxide for Nonvolatile Memories. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
155(6), H386-H386.
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Chatterjee, S., Kuo, Y., & Lu, J.
(2008).
Thermal annealing effect on electrical properties of metal nitride gate electrodes with hafnium oxide gate dielectrics in nano-metric MOS devices. Microelectronic Engineering.
85(1), 202-209.
-
Ahmed, S., Buckley, D. N., Nakahara, S., Ahmed, T. T., & Kuo, Y.
(2007).
An Isothermal Annealing Study of Spontaneous Morphology Change in Electrodeposited Copper Metallization. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
154(3), D103-D103.
-
Nominanda, H., & Kuo, Y.
(2007).
Memory Functions of Amorphous Silicon-Based Floating Gate MIS Capacitors. ECS Electrochemistry Letters.
10(8), H232-H232.
-
Birge, A., Lin, C., & Kuo, Y.
(2007).
Memory Functions of Nanocrystalline Indium Tin Oxide Embedded Zirconium-Doped Hafnium Oxide MOS Capacitors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
154(10), H887-H887.
-
Liu, G., & Kuo, Y.
(2007).
Reactive Ion Etching of Titanium Tungsten Thin Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
154(7), H653-H653.
-
Yan, J., Kuo, Y., & Lu, J.
(2007).
Zirconium-Doped Hafnium Oxide High-k Dielectrics with Subnanometer Equivalent Oxide Thickness by Reactive Sputtering. ECS Electrochemistry Letters.
10(7), H199-H199.
-
Kuo, Y., & Nominanda, H.
(2006).
Nonvolatile hydrogenated-amorphous-silicon thin-film-transistor memory devices. Applied Physics Letters.
89(17), 173503-173503.
-
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.
(2006).
Breakdown phenomena of zirconium-doped hafnium oxide high-k stack with an inserted interface layer. Applied Physics Letters.
89(7), 072901-072901.
-
Lu, J., Kuo, Y., Yan, J., & Lin, C.
(2006).
Nanocrystalline Silicon Embedded Zirconium-Doped Hafnium Oxide High-kMemory Device. Japanese Journal of Applied Physics.
45(No. 34), L901-L903.
-
Giordano, S. H., Lee, A., Kuo, Y., Freeman, J., & Goodwin, J. S.
(2006).
Late gastrointestinal toxicity after radiation for prostate cancer. Cancer.
107(2), 423-432.
-
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.
(2006).
Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks. Applied Physics Letters.
88(20), 202904-202904.
-
Chatterjee, S., Kuo, Y., Lu, J., Tewg, J., & Majhi, P.
(2006).
Electrical reliability aspects of HfO2 high-k gate dielectrics with TaN metal gate electrodes under constant voltage stress. Microelectronics Reliability.
46(1), 69-76.
-
Lu, J., Kuo, Y., & Tewg, J.
(2006).
Hafnium-Doped Tantalum Oxide High-k Gate Dielectrics. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
153(5), G410-G410.
-
Lee, H. H., & Kuo, Y.
(2006).
Integration of an Amorphous Silicon Thin Film Transistor with a Microchannel Electrophoresis for Protein Identification. ECS Electrochemistry Letters.
9(6), J21-J21.
-
Lu, J., Kuo, Y., Chatterjee, S., & Tewg, J.
(2006).
Physical and electrical properties of TaN, MoN, and WN electrodes on HfO[sub 2] high-k gate dielectric. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B.
24(1), 349-349.
-
Lu, J., & Kuo, Y.
(2005).
Hafnium-doped tantalum oxide high-k dielectrics with sub-2 nm equivalent oxide thickness. Applied Physics Letters.
87(23), 232906-232906.
-
Ristova, M., Kuo, Y., Lee, H. H., & Tewg, J. Y.
(2005).
Effect of long-term HeNe laser light exposure and subsequent annealing on hydrogenated amorphous silicon pin photodiodes. Semiconductor Science and Technology.
20(10), 1005-1009.
-
Tewg, J., Kuo, Y., Lu, J., & Schueler, B. W.
(2005).
Influence of a 5A Tantalum Nitride Interface Layer on Dielectric Properties of Zirconium-Doped Tantalum Oxide High-k Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
152(8), G617-G617.
-
Tewg, J., Kuo, Y., & Lu, J.
(2005).
Suppression of Crystallization of Tantalum Oxide Thin Film by Doping with Zirconium. ECS Electrochemistry Letters.
8(1), G27-G27.
-
Tewg, J., Kuo, Y., & Lu, J.
(2005).
Zirconium-Doped Tantalum Oxide Gate Dielectric Films Integrated with Molybdenum, Molybdenum Nitride, and Tungsten Nitride Gate Electrodes. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
152(8), G643-G643.
-
Luo, W., Kuo, Y., & Kuo, W.
(2004).
Dielectric Relaxation and Breakdown Detection of Doped Tantalum Oxide High-k Thin Films. IEEE Transactions on Device and Materials Reliability.
4(3), 488-494.
-
Kuo, Y., & Lee, S.
(2004).
A new, room-temperature, high-rate plasma-based copper etch process. Vacuum.
74(3-4), 473-477.
-
Lu, J., Kuo, Y., Tewg, J., & Schueler, B.
(2004).
Effects of the TaNx interface layer on doped tantalum oxide high-k films. Vacuum.
74(3-4), 539-547.
-
Lee, S., & Kuo, Y.
(2004).
Hydrogen bromide plasmacopper reaction in a new copper etching process. THIN SOLID FILMS.
457(2), 326-332.
-
Tewg, J., Kuo, Y., Lu, J., & Schueler, B. W.
(2004).
Electrical and Physical Characterization of Zirconium-Doped Tantalum Oxide Thin Films. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
151(3), F59-F59.
-
Ristova, M., Kuo, Y., & Lee, H. H.
(2003).
Study of hydrogenated amorphous silicon thin films as a potential sensor for HeNe laser light detection. Applied Surface Science.
218(1-4), 44-53.
-
Ristova, M., Kuo, Y., & Lee, S.
(2003).
Influence of the roughness of molybdenum back electrode on the photodiode characteristics under HeNe illumination. Semiconductor Science and Technology.
18(8), 788-793.
-
Kuo, Y., Lu, J., & Tewg, J.
(2003).
Tantalum Nitride Interface Layer Influence on Dielectric Properties of Hafnium Doped Tantalum Oxide High Dielectric Constant Thin Films. Japanese Journal of Applied Physics.
42(Part 2, No. 7A), L769-L771.
-
Kuo, Y., Lu, J., & Tewg, J. Y.
(2003).
Tantalum nitride interface layer influence on dielectric properties of hafnium doped tantalum oxide high dielectric constant thin films. Japanese Journal of Applied Physics.
42(7 A),
-
Lee, S., & Kuo, Y.
(2002).
A New Hydrogen Chloride Plasma-Based Copper Etching Process. Japanese Journal of Applied Physics.
41(Part 1, No. 12), 7345-7352.
-
Kuo, Y., & Suzuki, K.
(2002).
Advanced Flat-Panel Displays and Materials. MRS BULLETIN.
27(11), 859-863.
-
Kuo, Y., & Lee, H. H.
(2002).
Plasma-enhanced chemical vapor deposition of silicon nitride below 250C. Vacuum.
66(3-4), 299-303.
-
Kuo, Y., & Lee, S.
(2001).
Room-temperature copper etching based on a plasmacopper reaction. Applied Physics Letters.
78(7), 1002-1004.
-
Lee, S., & Kuo, Y.
(2001).
Chlorine Plasma/Copper Reaction in a New Copper Dry Etching Process. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
148(9), G524-G524.
-
Kuo, Y., & Lee, H. H.
(2001).
Microchannel Electrophoresis Device for Separation and In Situ Detection of Proteins. ECS Electrochemistry Letters.
4(10), H23-H23.
-
Kuo, Y.
(2000).
Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si:H thin-film transistors. Vacuum.
59(2-3), 484-491.
-
Kuo, Y., & Lee, S.
(2000).
A Novel Plasma-Based Copper Dry Etching Method. Japanese Journal of Applied Physics.
39(Part 2, No. 3A/B), L188-L190.
-
Kuo, Y., & Lee, S.
(2000).
Novel plasma-based copper dry etching method. Japanese Journal of Applied Physics.
39(3 A/B),
-
Kuo, Y., Okajima, K., & Takeichi, M.
(1999).
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays. IBM Journal of Research and Development.
43(1.2), 73-88.
-
Kuo, Y., Okajima, K., & Takeichi, M.
(1999).
Plasma processing in the fabrication of amorphous silicon thin-film-transistor arrays. IBM Journal of Research and Development.
43(1-2), 73-87.
-
Kuo, Y.
(1999).
Preface. IBM Journal of Research and Development.
43(1.2), 3-4.
-
Kuo, Y., & Tai, T. L.
(1998).
High Temperature Reactive Ion Etching of IndiumTin Oxide with HBr and CH4 Mixtures. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
145(12), 4313-4317.
-
Kuo, Y.
(1998).
Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistorsa critical review. Vacuum.
51(4), 741-745.
-
Kuo, Y.
(1998).
Reactive ion etching of indium tin oxide by SiCl4-based plasmassubstrate temperature effect. Vacuum.
51(4), 777-779.
-
Colgan, E. G., Alt, P. M., Wisnieff, R. L., Fryer, P. M., Galligan, E. A., Graham, W. S., ... Wright, S. L.
(1998).
A 10.5-in.-diagonal SXGA active-matrix display. IBM Journal of Research and Development.
42(3.4), 427-444.
-
Kuo, Y.
(1997).
Doping gas effects on plasma enhanced chemical vapor deposition on heavily phosphorus-doped n+silicon film. Applied Physics Letters.
71(19), 2821-2823.
-
Kuo, Y.
(1997).
Anomalous High Rate Reactive Ion Etching Process for Indium Tin Oxide. Japanese Journal of Applied Physics.
36(Part 2, No. 5B), L629-L631.
-
Kuo, Y.
(1997).
High Temperature Reactive Ion Etching of IndiumTin Oxide. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
144(4), 1411-1416.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Hunt, D., ... Wright, S.
(1997).
A six-mask TFT-LCD process using copper-gate metallurgy. Journal of the Society for Information Display.
5(1), 49-49.
-
Kuo, Y.
(1997).
Anomalous high rate reactive ion etching process for indium tin oxide. Japanese Journal of Applied Physics.
36(5 B),
-
Paloura, E. C., Lioutas, C. h., Vouroutzis, N., Arnoldbik, W. M., Habraken, F., & Kuo, Y.
(1996).
Microstructure modifications induced by bonded hydrogen in Nrich SiNx:H films. Journal of Applied Physics.
80(10), 5742-5747.
-
Kuo, Y.
(1996).
Horizontally Redundant, SplitGate aSi:H Thin Film Transistors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
143(8), 2680-2682.
-
Kuo, Y., & Kozlowski, P. M.
(1996).
Polycrystalline silicon formation by pulsed rapid thermal annealing of amorphous silicon. Applied Physics Letters.
69(8), 1092-1094.
-
Kuo, Y.
(1996).
Nonphotosensitive, Vertically Redundant TwoChannel aSi:H Thin Film Transistor. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
143(4), 1469-1471.
-
Kuo, Y.
(1995).
Singlegate multichannel amorphous silicon thinfilm transistors. Applied Physics Letters.
67(21), 3174-3176.
-
Kuo, Y.
(1995).
Thinfilm transistors with multistep deposited amorphous silicon layers. Applied Physics Letters.
67(15), 2173-2175.
-
Kuo, Y.
(1995).
Plasma Etching and Deposition for aSi:H Thin Film Transistors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
142(7), 2486-2507.
-
Kuo, Y.
(1995).
PECVD Silicon Nitride as a Gate Dielectric for Amorphous Silicon Thin Film Transistor: Process and Device Performance. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
142(1), 186-190.
-
Kuo, Y.
(1994).
Thin Film Transistors with Graded SiN x Gate Dielectrics. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
141(4), 1061-1065.
-
Kuo, Y., & Schrott, A. G.
(1994).
Reactive Ion Etch Processes for Amorphous Silicon Thin Film Transistors: A Based Chemistry. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
141(2), 502-506.
-
Kuo, Y.
(1993).
Etch mechanism in the low refractive index silicon nitride plasmaenhanced chemical vapor deposition process. Applied Physics Letters.
63(2), 144-146.
-
Kuo, Y.
(1993).
Plasma Swelling of Photoresist. Japanese Journal of Applied Physics.
32(Part 2, No.1A/B), L126-L128.
-
Kuo, Y.
(1993).
Reactive Ion Etching of Sputter Deposited Tantalum with CF4, CF3Cl, and CHF3. Japanese Journal of Applied Physics.
32(Part 1, No. 1A), 179-185.
-
Kuo, Y.
(1992).
Reactive ion etch damages in inverted, trilayer thinfilm transistor. Applied Physics Letters.
61(23), 2790-2792.
-
Kuo, Y.
(1992).
A Selfaligned, Trilayer, aSi:H Thin Film Transistor Prepared from Two Photomasks. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
139(4), 1199-1204.
-
Kuo, Y., & Crowder, M. S.
(1992).
Reactive Ion Etching of PECVD n+ aSi:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
139(2), 548-552.
-
Kuo, Y.
(1992).
Reactive Ion Etching of Sputter Deposited Tantalum Oxide and Its Etch Selectivity to Tantalum. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
139(2), 579-583.
-
Kuo, Y.
(1992).
Reactive ion etching technology in thin-film-transistor processing. IBM Journal of Research and Development.
36(1), 69-75.
-
Kuo, Y.
(1991).
A New Process Using Two PhotoMasks to Prepare Trilayer Thin Film Transistors. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
138(2), 637-638.
-
Kuo, Y.
(1990).
Factors Affecting the Molybdenum Line Slope by Reactive Ion Etching. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
137(6), 1907-1911.
-
Kuo, Y.
(1990).
Reactive Ion Etching of PECVD Amorphous Silicon and Silicon Nitride Thin Films with Fluorocarbon Gases. JOURNAL OF THE ELECTROCHEMICAL SOCIETY.
137(4), 1235-1239.
-
Kuo, Y., & Crowe, J. R.
(1989).
Factors Affecting Reactive Ion Etching Of Corning 7059 Glass. 35th European Mask and Lithography Conference (EMLC 2019).
1037, 103-109.
-
Kuo, Y.
(1989).
Thin Film Technologies In Active Matrix Addressing System Of LCDs. 35th European Mask and Lithography Conference (EMLC 2019).
1117, 114-122.
-
Kuo, Y., & Crowe, J. R.
(1988).
Reactive Ion Etching Of A Multicomponent Glass Substrate. 35th European Mask and Lithography Conference (EMLC 2019).
0945, 103-110.
-
Kuo, Y., Munson, C. L., Rixey, W. G., Garcia, A. A., Frierman, M., & King, C. J.
(1987).
Use of Adsorbents for Recovery of Acetic Acid from Aqueous Solutions Part IFactors Governing Capacity. Separation and Purification Methods.
16(1), 31-64.
-
Munson, C. L., Garcia, A. A., Kuo, Y., Frierman, M., & King, C. J.
(1987).
Use of Adsorbents for Recovery of Acetic Acid from Aqueous Solutions Part IIFactors Governing Selectivity. Separation and Purification Methods.
16(1), 65-89.
-
Frierman, M., Kuo, Y., Joshi, D., Garcia, A. A., & King, C. J.
(1987).
Use of Adsorbents for Recovery of Acetic Acid from Aqueous Solutions Part IIISolvent Regeneration. Separation and Purification Methods.
16(1), 91-102.
-
Kuo, Y., Munson, C. L., Frierman, M., & King, C. J.
(1985).
USE OF ADSORBENTS FOR RECOVERY OF ACETIC ACID FROM AQUEOUS SOLUTIONS. Reactive Polymers Ion Exchangers Sorbents.
6(1), 52.
-
KUO, Y.
(1984).
EXSORPTION - A NEW, SEPARATION PROCESS. Chemical Engineering Progress.
80(12), 37-42.
-
Kuo, Y., & Gregor, H. P.
(1983).
Acetic Acid Extraction by Solvent Membrane. Separation Science and Technology.
18(5), 421-440.
-
Way Kuo, .., & Yue Kuo.
(1983).
Facing the headaches of early failures: A state-of-the-art review of burn-in decisions. Proceedings of the Institute of Electrical and Electronics Engineers (IEEE).
71(11), 1257-1266.
-
Chen, Y., Yuan, T., Bae, S. J., & Kuo, Y.
(2021).
Two-level differential burn-in policy for spatially heterogeneous defect units in semiconductor manufacturing. Computers & Industrial Engineering.
162, 107768-107768.
-
conference paper
-
Lin, W., & Kuo, Y.
(2021).
Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric. ECS Journal of Solid State Science and Technology.
126001-126001.
-
Shukla, A., & Kuo, Y.
(2020).
Study of Electrothermal Characteristics and Emitted Light Characteristics of SSI-LED. ECS Journal of Solid State Science and Technology.
065017-065017.
-
Kuo, Y., & Zhang, S.
(2019).
Communication—Co-Planar Structured Nano-Resistor Devices. ECS Journal of Solid State Science and Technology.
Q223-Q225.
-
Li, M., Su, J. Q., & Kuo, Y.
(2019).
Capping Layer Effect on Lifetime of Plasma Etched Copper Lines. ECS Transactions.
87-92.
-
Kuo, Y.
(2019).
Co-Planar Nano-Resistor Devices. ECS Transactions.
71-76.
-
Su, J. Q., Li, M., & Kuo, Y.
(2019).
Lifetime of Plasma Etched Copper Lines. ECS Transactions.
65-72.
-
Kuo, Y.
(2019).
Nano-resistor Based Devices – Effects of Size, Structure, and Performance. ECS Transactions.
171-176.
-
Kuo, Y.
(2019).
Preface. ECS Transactions.
III-IV.
-
Kuo, Y.
(2018).
Progress of Thin Film Transistor Technology. 1-4.
-
Jiang, J., Kuo, Y., Chang, T., & Chiang, H.
(2018).
(Invited) Illumination Light Wavelength Effects on Double-Gate a-IGZO Thin Film Transistor with Top-Gate-to-Source/Drain Offset Structure. ECS Transactions.
147-152.
-
Li, M., & Kuo, Y.
(2018).
Electromigration of Plasma Etched Copper Lines of Various Widths and Lengths. ECS Transactions.
41-47.
-
Zhang, S., & Kuo, Y.
(2018).
Enhancement of SSI-LED Light Emission by Embedding CdS in the Zr-Doped HfO2High-kFilm. ECS Transactions.
53-58.
-
Gao, B., Gao, Y., Kuo, Y., & Yuan, T.
(2018).
Plasma-Based Copper Etch Process and Reliability. ECS Transactions.
165-170.
-
Kuo, Y.
(2018).
Preface. ECS Transactions.
iii-iv.
-
Zhang, S., Kuo, Y., & Zhang, X.
(2017).
Substrate Effect on Light Emission of SSI-LEDs. ECS Transactions.
191-197.
-
Henry, K., & Kuo, Y.
(2017).
Effect of Incident Light Direction and Metallic Reflector Layer on Light Sensing of Amorphous Silicon Pin Diodes. ECS Transactions.
1753-1759.
-
Kuo, Y.
(2017).
(Invited) Multifunctional Amorphous Metal Oxide Thin Films Structure Transformation for Various Functions. ECS Transactions.
21-29.
-
Zhang, S., & Kuo, Y.
(2017).
Failure Mechanism of Nano-Resistor Devices. ECS Transactions.
79-83.
-
Zhang, S., & Kuo, Y.
(2017).
Resistivity and Barrier Height of Nano-Resistors Made from Zr-Doped HfO 2 High- K Dielectric on Si Wafer. ECS Transactions.
63-68.
-
Zhang, S., & Kuo, Y.
(2017).
Narrowing of Broad Band Light Emitted from a SSI-LED. ECS Transactions.
17-22.
-
Zhang, S., & Kuo, Y.
(2016).
Nonvolatile Memory Characteristics of CdS Embedded Zr-Doped HfO2 High-k Dielectric MOS Capacitors. ECS Transactions.
11-17.
-
Zhang, S., & Kuo, Y.
(2016).
Temperature Effects on Charge Storage and Transfer of Nanocrystalline CdSe Embedded Zr-Doped HfO2MOS Memory Device. ECS Journal of Solid State Science and Technology.
Q231-Q238.
-
Henry, K., & Kuo, Y.
(2016).
Effect of n + Layer Deposition Power on Light Sensing of Amorphous Silicon pin Diodes. ECS Transactions.
33-39.
-
Kim, K., & Kuo, Y.
(2016).
Light Sensing of a-Si:H P in Diode - Wavelength and Intensity Effects. ECS Transactions.
15-20.
-
Kuo, Y.
(2015).
(Invited) A Metal Oxide Antifuse-Diode Device. ECS Transactions.
23-29.
-
Zhang, S., Kuo, Y., & Verkhoturov, S.
(2015).
Post Deposition Annealing Atmosphere Effect on SSI-LEDs Made of Zr-Doped HfO2 High-k Gate Dielectric. ECS Transactions.
17-22.
-
Kuo, Y.
(2015).
Principles and possible system-on-wafer applications of SSI-LEDs. 9-12.
-
Kuo, Y.
(2015).
(Invited) A Diode-Like Antifuse Device Made of High-K Dielectric. ECS Transactions.
183-189.
-
Kuo, Y.
(2015).
(Gordon E. Moore Medal for Outstanding Achievement in Solid State Science and Technology) Research on Nano and Giga Electronics Breakthroughs Along the Path. ECS Transactions.
139-154.
-
Zhang, S., & Kuo, Y.
(2015).
(Invited) Temperature Influence on Current Leakage and Hysteresis of Nc-CdSe Embedded Zr-Doped HfO2 High-k Dielectric Nonvolatile Memory. ECS Transactions.
195-202.
-
Zhang, S., & Kuo, Y.
(2015).
Solid State Incandescent Light Emitting Device Made of WOx Embedded Zr-Doped HfO2 High-k Stack on Si. ECS Transactions.
223-228.
-
Lin, C., Kuo, Y., & Zhang, X.
(2015).
White-Light Emission SSI-LED Made of Sputter Deposited TiOx Thin Film on Si Wafer. ECS Transactions.
1-6.
-
Kuo, Y.
(2014).
A solid state thin film incandescent light emitting device. 2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM).
4.7.1-4.7.4.
-
Lin, C., & Kuo, Y.
(2014).
Post Deposition Annealing Temperature Effect on White-Light Emitting of WOx Thin Film Stack on Si. ECS Transactions.
1-6.
-
Lin, C., & Kuo, Y.
(2014).
Post Deposition Annealing Temperature Effect on White-light Emitting of Sputter Deposited Zr-doped HfO2 Thin Film. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss14-1698-ii08-20.
-
Kuo, Y., & Chang, G.
(2014).
(Invited) Thin Film Transistors as Driving Devices for Attached Devices. ECS Transactions.
145-153.
-
Zhang, S., & Kuo, Y.
(2014).
Temperature Effect on Memory Functions of the nc-CdSe Embedded ZrHfO High-k MOS Device. ECS Transactions.
125-131.
-
Zhang, S., Kuo, Y., Liu, X. i., & Lin, C.
(2014).
Nonvolatile memories based on AlOx embedded ZrHfO high-k gate dielectric. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss14-1691-bb10-04.
-
Kim, K., & Kuo, Y.
(2014).
P+ layer effects on a-Si:H solar cell performance. 3055-3059.
-
Liu, X. i., Kuo, Y., Zhang, S., & Yuan, T.
(2014).
Light Wavelength Effects on Charge Trapping and Detrapping of AlOx Embedded ZrHfO High-K Stack. ECS Transactions.
169-175.
-
Lin, C., & Kuo, Y.
(2014).
White-Light Emission from Amorphous ZrHfO Thin Film Dielectrics with and without Embedded Nanocrystalline CdSe Dots. ECS Transactions.
55-60.
-
Kim, K., Kuo, V., & IEEE.
(2014).
p(+) layer effects on a-Si:H solar cell performance. 3055-3059.
-
Kuo, Y., Lin, C., & IEEE.
(2014).
A Solid-State Incandescent Device for Single-Chip White-Light Emission. 2012 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO).
-
Kuo, Y., & Lin, C. C.
(2014).
A solid-state incandescent device for single-chip white- light emission
-
Kuo, Y., & Professor, D.
(2014).
Preface. ECS Transactions.
iii.
-
Kuo, Y., & IEEE.
(2013).
Progress of Thin Film Transistor Technology - Large-Area Mass Production and Beyond. 5-8.
-
Lin, C., & Kuo, Y.
(2013).
CdSe Embedded ZrHfO Gate Dielectric Nonvolatile Memories Charge Trapping and Breakdown Studies. ECS Transactions.
109-113.
-
Lin, C., & Kuo, Y.
(2013).
Light Wavelength Effect on Tungsten Oxide Dielectric Properties. ECS Transactions.
259-263.
-
Lee, I., & Kuo, Y.
(2013).
Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n+, and p+ amorphous silicon thin films. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
133-138.
-
Kuo, Y.
(2013).
(Invited) Metal Oxide High-k Thin Films from Gate Dielectrics to Nonvolatile Memories to LEDs. ECS Transactions.
273-281.
-
Liu, X. i., Kuo, Y., & Yuan, T.
(2013).
Exposure Light Wavelength Effects on Charge Trapping and Detrapping of nc-MoOx Embedded ZrHfO High-k Stack. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss13-1562-dd10-05-cc06-05.
-
Kuo, Y.
(2013).
(Invited) Nanocrystals Embedded High-k Nonvolatile Memories Bulk Film and Nanocrystal Material Effects. ECS Transactions.
121-128.
-
Lin, C., & Kuo, Y.
(2013).
Nonvolatile memory MOS capacitors made of CdSe embedded ZrHfO high-k gate dielectric. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss13-1562-dd05-01.
-
Lin, C., & Kuo, Y.
(2012).
Plasma Etching of Copper Thin Film over a Dielectric Step and Electromigration Failure Mechanism. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss12-1428-c05-03-20.
-
Kuo, Y., Lin, C., & Verkhoturov, S.
(2012).
Crystallization of a-Si thin film using an ultra thin n+ poly-Si seed layer for solar cell applications. Conference Record IEEE Photovoltaic Specialists Conference.
000342-000345.
-
Wu, S., Kuo, Y., & Lin, C.
(2012).
Light Wavelength Effects on Performance of a-Si:H PIN Photodiodes. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
199-204.
-
Kuo, Y., Liu, X. i., Yang, C., & Lin, C.
(2012).
Nonvolatile Memory Characteristics of Nanocrystalline Molybdenum Oxide Embedded High-kFilm - Device Performance and Light Wavelength Effects. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss12-1430-e01-10-27.
-
Kuo, Y., & Lin, C.
(2012).
Polycrystalline Silicon Thin Film Formed By Multiple Pulsed Rapid Thermal Annealing Intrinsic a-Si Film Thickness Effect. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
269-274.
-
Liu, X. i., Yang, C., Kuo, Y., & Yuan, T.
(2012).
Nanocrystalline MoOx Embedded ZrHfO High-k Memories - Charge Trapping and Retention Characteristics. ECS Transactions.
203-209.
-
Luo, B., Lin, C., & Kuo, Y.
(2011).
Light Effects on Charge Trapping and Detrapping of nc-ZnO Embedded ZrHfO High-k MOS Nonvolatile Memories. ECS Transactions.
93-100.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2011).
Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss11-1337-q01-08-33.
-
Kuo, Y.
(2011).
(Invited) Nonvolatile Memories for Nano and Giga Electronics. ECS Transactions.
157-166.
-
Zhu, M., Kuo, Y., Lin, C., & Wang, Q. i.
(2011).
Poly-Si Thin Film Formation Using a Novel Low Thermal Budget Process. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
mrss11-1321-a03-05-172.
-
Lin, C., & Kuo, Y.
(2011).
Material and Electrical Properties of Hole-Trapping Memory Capacitors Composed of nc-ITO Embedded ZrHfO High-k Films. ECS Transactions.
249-255.
-
Kuo, Y.
(2011).
Status Review of Nanocrystals Embedded High-K Nonvolatile Memories. ECS Transactions.
13-31.
-
Lin, C. H., & Kuo, Y.
(2010).
Charge trapping sites in nc-RuO embedded ZrHfO high-K nonvolatile memories. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
47-53.
-
Kuo, Y.
(2010).
ECS Transactions: Preface. ECS Transactions.
-
Kuo, Y.
(2010).
(Invited) Mechanism and Performance of Floating-Gate a-Si:H TFT Nonvolatile Memory Devices. ECS Transactions.
357-364.
-
Kuo, Y.
(2010).
(Invited) Performance and Reliability of Nanocrystals Embedded High-k Nonvolatile Memories. ECS Transactions.
425-430.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2010).
Stress-Induced Deterioration of Nanocrystalline ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
307-311.
-
Lin, C., Yang, C., & Kuo, Y.
(2010).
Hole-Trapping Mechanism and SILC of Dual-Layer nc-ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
269-276.
-
Kuo, Y., Lin, C., Zhu, M., & IEEE.
(2010).
A NOVEL LOW THERMAL BUDGET THIN-FILM POLYSILICON FABRICATION PROCESS FOR LARGE-AREA, HIGH-THROUGHPUT SOLAR CELL PRODUCTION. Conference Record IEEE Photovoltaic Specialists Conference.
3698-3701.
-
Kuo, Y., & Coan, M.
(2010).
Influence of Embedded a-Si:H Layer Location on Floating-gate a-Si:H TFT Memory Functions. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
1245-a12-01-255.
-
Kuo, Y.
(2009).
ECS Transactions: Preface. ECS Transactions.
-
Mascher, P., Joshi, P., Overberg, M. E., & Kuo, Y.
(2009).
ECS Transactions: Preface. ECS Transactions.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Reliability of nc-ZnO Embedded ZrHfO High-k Nonvolatile Memory Devices Stressed at High Temperatures. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
25-+.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Failure Analysis of Single and Dual nc-ITO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
457-464.
-
Kuo, Y.
(2009).
A-Si:H TFT Nonvolatile Memories and Copper Interconnect for Rigid and Flexible Electronics. ECS Transactions.
183-190.
-
Lin, C., & Kuo, Y.
(2009).
Single and Dual nc-ITO and nc-ZnO Embedded ZrHfO High-k Nonvolatile Memories. ECS Transactions.
81-87.
-
Yang, C., Kuo, Y., Lin, C., & Kuo, W.
(2009).
Temperature Influence on Nanocrystals Embedded High-k Nonvolatile Memory Characteristics. ECS Transactions.
41-47.
-
Kuo, Y., & Nominanda, B.
(2009).
Charge and discharge of floating-gate amorphous silicon thin-film transistor nonvolatile memories. Journal of the Korean Physical Society.
409-414.
-
Kuo, Y.
(2008).
ECS Transactions: Preface. ECS Transactions.
-
Liu, G., & Kuo, Y.
(2008).
Electromigration of Cu interconnect lines prepared by a plasma-based etch process. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
89-94.
-
Kuo, Y., & Nominanda, H.
(2008).
Floating-Gate a-Si:H TFT Nonvolatile Memories. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
231-239.
-
Yang, C., Kuo, Y., Lin, C., Wan, R., & Kuo, W.
(2008).
Relaxation behavior and breakdown mechanisms of nanocrystals embedded Zr-doped HfO2 high-k thin films for nonvolatile memories. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
35-+.
-
Lin, C., & Kuo, Y.
(2008).
Embedding of Nanocrystalline Ruthenium in ZrHfO High-k Film for Nonvolatile Memories. ECS Transactions.
465-470.
-
Lin, C., & Kuo, Y.
(2008).
Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films. ECS Transactions.
309-316.
-
Kuo, Y., Coan, M. R., & Liu, G.
(2008).
Reliability of a-Si:H TFTs and Copper Interconnect Lines for Flexible Electronics. ECS Transactions.
345-351.
-
Chia-Han Yang, .., Yue Kuo, .., Rui Wan, .., Chen-Han Lin, .., & Way Kuo.
(2008).
Failure analysis of nanocrystals embedded high-k dielectrics for nonvolatile memories. 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
46-49.
-
Kuo, Y., & Nominanda, H.
(2007).
Amorphous silicon based TFT and MIS nonvolatile memories. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
225-230.
-
Kuo, Y., Ast, D. G., & Shur, M.
(2007).
ECS Transactions - 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs.TFT: Preface. ECS Transactions.
-
Kuo, Y.
(2007).
TFTs beyond LCD pixel driving and experience for 45 mm ULSIC process development. 209-212.
-
Rui Wan, .., Chen-Han Lin, .., Yue Kuo, .., & Way Kuo.
(2007).
Charge trapping of ultra-thin ZrHfO
x /RuOx /ZrHfOx high-k stacks. 2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT. 99-102.
-
Lu, J., Lin, C., & Kuo, Y.
(2007).
Nonvolatile Memories Based on Nanocrystalline Zinc Oxide Embedded Zirconium-doped Hafnium Oxide Thin Films. ECS Transactions.
509-518.
-
Nominanda, H., Kuo, Y., Chen, C., & Hwang, C.
(2007).
Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors. ECS Transactions.
261-266.
-
Kuo, Y.
(2007).
ULSIC vs. TFT - What Can They Learn from Each Other?. ECS Transactions.
45-50.
-
Kuo, Y.
(2007).
ELECTRONICS AND PHOTONICS DIVISION AWARD ADDRESS: Thin Film Transistor and ULSIC Technologies - Parallel or Crossing?. ECS Transactions.
121-132.
-
Lin, C., Kuo, Y., & Lu, J.
(2007).
Influence of Ru Dopant on the Dielectric Properties of Zr-doped HfO2 High-k Thin Film. ECS Transactions.
121-127.
-
Kuo, Y., Lu, J., Yan, J., & Lin, C. H.
(2006).
A novel hole-based memory device fabricated from nano ITO embedded high-k thin films. 469-472.
-
Kuo, Y.
(2006).
ECS Transactions: Preface. ECS Transactions.
-
Kuo, Y., Birge, A., & Lin, C.
(2006).
Indium-Tin-Oxide Embedded in Zirconium-Doped Hafnium Oxide High-k Dielectric Films for Hole-Based Nonvolatile Memories. ECS Transactions.
193-201.
-
Kuo, Y.
(2006).
Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and Memories. ECS Transactions.
253-263.
-
Kuo, Y., & Nominanda, H.
(2006).
Nonvolatile Amorphous Silicon Thin Film Transistor Memories with the a-Si:H Embedded Gate Dielectric Structure. ECS Transactions.
333-339.
-
Kuo, Y., & Lu, J.
(2006).
Bulk and Interface Material and Electrical Properties of Hafnium-Doped Tantalum Oxide High-K Films. ECS Transactions.
177-183.
-
Kuo, Y., & Liu, G.
(2006).
Control of Edge Shape, Sidewall Profile, and Sidewall Roughness of the Plasma Etched Copper. ECS Transactions.
169-176.
-
Kuo, Y.
(2006).
Mixed oxides as high-k gate dielectric films. ECS Transactions.
13-22.
-
Kuo, Y., Lu, J., Yan, J., Yuan, T., Kim, H. C., Peterson, J., ... Luo, W.
(2006).
Sub 2 nm Thick Zirconium Doped Hafnium Oxide High-K Gate Dielectrics. ECS Transactions.
447-454.
-
Kuo, Y., Lu, J., & Nominanda, H.
(2006).
Sputter deposition of nm-thick films for passivation of organic pellicles. Vacuum.
698-703.
-
Kuo, Y., Nominanda, H., & Liu, G. J.
(2006).
n-channel and p-channel a-Si : H thin-film transistors with copper electrodes. Journal of the Korean Physical Society.
S92-S97.
-
Kuo, Y., & Lee, H. H.
(2005).
A novel TFT-driven microchannel electrophoresis device for proteins separation and identification. 270-276.
-
Ahmed, S., Buckley, D. N., Nakahara, S., & Kuo, Y.
(2005).
Effect of temperature on incubation time for spontaneous morphology change in electrodeposited copper metallization. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
209-214.
-
Lei, Y., Kuo, Y., & Nominanda, H.
(2005).
Hydrogenated amorphous silicon bipolar junction thin film transistors (a-Si:H B-TFTs). 277-283.
-
Kuo, Y.
(2005).
Proceeding - Electrochemical Sciety: Preface
-
Goyal, A., Wong-Ng, W., Kuo, Y., & Leonte, O.
(2005).
Proceedings - Electrochemical Society: Preface
-
Chatterjee, S., Kuo, Y., Lu, J., Tewg, J., & Majhi, P.
(2005).
Effects of post metallization annealing on the electrical reliability of ultra-thin HfO/sub 2/ films with MoN and WN gate electrodes. 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual..
626-627.
-
Lu, J., Kuo, Y., & IEEE.
(2004).
Electrical and material characteristics of the sub 5 nm hafnium doped tantalum oxide high K film. 389-391.
-
Lu, J., Tewg, J. Y., & Kuo, Y.
(2004).
Engineering the nm-thick interface layer formed between a high-k film and silicon. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
81-86.
-
Kuo, Y., & Lei, Y.
(2004).
Fabrication and characterization of hydrogenated amorphous silicon bipolar thin film transistor (B-TFT). AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
709-714.
-
Tewg, J. Y., & Kuo, Y.
(2004).
Influence of the 5 A TaNx interface layer on dielectric properties of the Zr-doped TaOX high-k film. ARTIFICIAL CHEMICAL SENSING: OLFACTION AND THE ELECTRONIC NOSE (ISOEN 2001).
25-35.
-
Nominanda, H., Liu, G. J., Lee, H. H., & Kuo, Y.
(2004).
The p-channel a-Si : H thin film transistor with plasma etched copper electrodes. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
667-672.
-
Wen Luo, .., Way Kuo, .., & Yue Kuo.
(2004).
Bayesian approach to reliability projection for high k dielectric thin films. 2004 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT.
186-187.
-
Tewg, J. Y., Lu, J., Kuo, Y., & Schueler, B.
(2003).
Electrical and physical characterization of zirconium-doped tantalum oxide, films. 75-81.
-
Lu, J., Tewg, J. Y., Kuo, Y., & Liu, P. C.
(2003).
Hafnium-doped tantalum oxide high k dielectrics. ARTIFICIAL CHEMICAL SENSING: OLFACTION AND THE ELECTRONIC NOSE (ISOEN 2001).
105-110.
-
Kuo, Y., Lu, J., Tewg, J., & Zimmerman, P. A.
(2003).
Passivation of the 157-nm pellicle with nanometer thin films. 35th European Mask and Lithography Conference (EMLC 2019).
195-198.
-
Kuo, Y., Chung, T. W., & Nominanda, H.
(2003).
Plasma hydrogenation - A new method of reducing the k value of the low k polyimide film. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
333-338.
-
Kuo, Y., Nominanda, H., Ristova, M., Lee, H. H., & Tewg, J. Y.
(2003).
Boron-doped A-Si : H thin film deposition process and applications in P-channel thin film transistor and photodiode for He-Ne laser light detection. 292-300.
-
Luo, W., Sunardi, D., Kuo, Y., & Kuo, W.
(2003).
Stress testing and characterization of high-k dielectric thin films. 18-23.
-
Lee, H. H., & Kuo, Y.
(2002).
A New Microchannel Device for Proteins Separation and Identification. 454-459.
-
Lee, S., & Kuo, Y.
(2002).
Copper fine patterns etched with HBr plasma based processes. 299-304.
-
Nominanda, H., & Kuo, Y.
(2002).
Process and material properties of PECVD boron-doped amorphous silicon films. 1-9.
-
Kuo, Y., Jiang Lu, .., Liu, P. C., Daby, F. M., & Jun Yen Tewg.
(2002).
Influence of the nanometer thick interface layer to electrical properties of the 10 nm doped metal oxide high k dielectrics. 2003 Third IEEE Conference on Nanotechnology, 2003. IEEE-NANO 2003..
251-253.
-
Kuo, Y., & Lee, H. H.
(2001).
New microchannel device for protein separation and detection . 35th European Mask and Lithography Conference (EMLC 2019). 102-107.
-
Kuo, Y., & Lee, S.
(2000).
A new copper dry etching process. 328-335.
-
Kuo, Y.
(1999).
Hydrogenation of amorphous silicon thin film transistors. ARTIFICIAL CHEMICAL SENSING: OLFACTION AND THE ELECTRONIC NOSE (ISOEN 2001).
191-197.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Jenkins, L., ... Wilson, J.
(1998).
High conductivity gate metallurgy for TFT/LCD's. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
37-46.
-
Kuo, Y.
(1998).
Reactive ion etching of indium tin oxide - HBr chemistry. 197-202.
-
Kuo, Y.
(1998).
Critical plasma process issues in the fabrication of thin film transistor liquid crystal displays. 2009 IEEE International Conference on Plasma Science - Abstracts.
213.
-
Kuo, Y., & Latzko, K.
(1998).
Deposition of Highly Conductive n+ Silicon Film for a-Si:H Thin Film Transistor. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
891-896.
-
Fryer, P. M., Colgan, E., Galligan, E., Graham, W., Horton, R., Jenkins, L., ... Wright, S.
(1998).
High Conductivity Gate Metallurgy for TFT/LCD's. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
37-46.
-
Lioutas, C. B., Vouroutzis, N., Paloura, E. C., & Kuo, Y.
(1997).
Electron beam induced damage in N-rich SiNx films deposited by plasma enhanced chemical vapour deposition. THIN SOLID FILMS.
28-31.
-
Kuo, Y.
(1995).
Thin film transistors with layered a-Si:H structure. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
701-706.
-
Paloura, E. C., Kuo, Y., & Braun, W.
(1995).
On the effect of bonded hydrogen in the local microstructure of PECVD SiNx:H films. Physica B Condensed Matter.
562-564.
-
KUO, Y.
(1994).
REACTIVE ION ETCHING PROCESSES FOR AMORPHOUS-GERMANIUM ALLOYS. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
1041-1046.
-
Kuo, Y.
(1993).
Large area plasma enhanced chemical vapor deposition of nonstoichiometric silicon nitride. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
623-629.
-
Kuo, Y.
(1991).
New thin-film transistor structure and its processing method for liquid-crystal displays . 35th European Mask and Lithography Conference (EMLC 2019). 288-299.
-
Kuo, Y.
(1990).
Characterization of Indium Tin Oxide and Reactive Ion Etched Indium Tin Oxide Surfaces. Japanese Journal of Applied Physics.
2243-2246.
-
Kuo, Y.
(1990).
Reactive ion etching of plasma enhanced chemical vapor deposition amorphous silicon and silicon nitride: Feeding gas effects. Journal of Vacuum Science & Technology A.
1702-1705.
-
Kuo, Y., & Crowe, J. R.
(1990).
Slope control of molybdenum lines etched with reactive ion etching. Journal of Vacuum Science & Technology A.
1529-1532.
-
Kuo, Y.
(1987).
PLANARIZATION OF MULTILEVEL METALIZATION PROCESSES: A CRITICAL REVIEW. . 35th European Mask and Lithography Conference (EMLC 2019).
49-60.
-
Kuo, Y.
(1987).
THEORETICAL STUDY OF THE ETCHBACK PLANARIZATION PROCESS. AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY-2008.
209-214.
-
Kuo, Y.
(1984).
EXSORPTION - A CONCEPTUAL STUDY OF A PROPOSED NEW SEPARATION PROCESS
-
Kuo, Y., & Gregor, H. P.
(1983).
Diffusional mass transfer through solvent membrane by facilitated transport - Experiment. ACS Division of Petroleum Chemistry, Inc. Preprints.
757.
-
Kuo, Y., & Gregor, H. P.
(1983).
DIFFUSIONAL MASS TRANSFER THROUGH SOLVENT MEMBRANE BY FACILITATED TRANSPORT - EXPERIMENT. ACS Division of Petroleum Chemistry, Inc. Preprints.
757.
-
KUO, Y., & GREGOR, H. P.
(1983).
DIFFUSIONAL MASS-TRANSFER THROUGH SOLVENT MEMBRANE BY FACILITATED TRANSPORT - EXPERIMENT. ACS National Meeting Book of Abstracts.
72-PETR.
-
Lin, W., & Kuo, Y.
(2021).
Electrical and Optical Characteristics of SSI-LED Made from Capacitor Containing Tri-Layer WOx Embedded Zr-Doped HfOx Gate Dielectric. ECS Journal of Solid State Science and Technology.
126001-126001.
-
patent
Research
principal investigator on
Teaching
teaching activities
- CHEN320 Chen Analysis Instructor
- CHEN364 Kinetics & Reactor Design Instructor
- CHEN433 Chemical Engr Lab Ii Instructor
- CHEN464 Kinetics & Reactor Design Instructor
- CHEN475 Microelectron Proc Engr Instructor
- CHEN481 Seminar Instructor
- CHEN491 Hnr-research Instructor
- CHEN675 Microelectron Proc Engr Instructor
- CHEN685 Directed Studies Instructor
- CHEN691 Research Instructor
- ECEN691 Research Instructor
- MSEN684 Professional Internship: In-ab Instructor
- MSEN691 Research Instructor
Works By Students
chaired theses and dissertations
-
Henry, Kai Patrick (2016-12). Light Sensing Performance of Amorphous Silicon Thin Film Pin Diodes: Structure, Incident Light, and Plasma Deposition Effects.
-
Kim, Kibum (2017-05). Light Sensing Property of Amorphous Silicon Thin Film pin Diode: Solar Cell and Photodiode.
-
Lee, Hyun Ho (2004-12). A thin film transistor driven microchannel device.
-
Lee, I-Syuan (2014-05). Polycrystalline Silicon Solar Cells Fabricated by Pulsed Rapid Thermal Annealing of Amorphous Silicon.
-
Lin, Chen-Han (2011-08). Nanocrystals Embedded Zirconium-doped Hafnium Oxide High-k Gate Dielectric Films.
-
Lin, Chi-Chou (2014-12). High-K Based Non-Volatile Memory Devices with the Light Emitting Application.
-
Liu, Guojun (2008-08). Process and reliability assessment of plasma-based copper etch process.
-
Lu, Jiang (2005-12). Hafnium-doped tantalum oxide high-k gate dielectric films for future CMOS technology.
-
Luo, Wen (2004-12). Reliability characterization and prediction of high k dielectric thin film.
-
Nominanda, Helinda (2008-08). Amorphous silicon thin film transistor as nonvolatile device..
-
Tewg, Jun-Yen (2004-12). Zirconium-doped tantalum oxide high-k gate dielectric films.
-
Wu, Shu-Hsien (2013-05). Light Effects on the Charge Storage in the A-SI:H Pin Diode.
Background
education and training
- Ph.D. in Engineering Science, Columbia University - (New York, New York, United States) 1979
awards and honors
- Holder of the Dow Professorship, conferred by Texas A&M University - (College Station, Texas, United States), 2020
- Fellow, conferred by Materials Research Society - (Pittsburgh, Pennsylvania, United States), 2019
- Invitational Fellowship, conferred by Japan Society for the Promotion of Science - (Tokyo, Japan), 2017
- Honorary Chair Professor, conferred by National Chiao Tung University - (Hsinchu, Taiwan), 2017
- Fellow of the Society, conferred by American Vacuum Society - (New York, New York, United States), 2016
- Gordon E Moore Medal for Outstanding Achievement in Solid State Science and Technology, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 2015
- TEES Fellow, conferred by Texas A&M University - (College Station, Texas, United States), 2015
- Technology Commercialization Innovation Award, conferred by Texas A&M University System - (College Station, Texas, United States), 2014
- Association of Former Students University-Level Distinguished Achievement Award, The, conferred by Texas A&M University - (College Station, Texas, United States), 2012
- Electronics and Photonics Division Award, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 2007
- Fellow, conferred by Electrochemical Society - (Pennington, New Jersey, United States), 1999
- Fellow, conferred by Institute of Electrical and Electronics Engineers - (Piscataway, New Jersey, United States), 1999
Contact
first name
- Yue
has last name
- Kuo
mailing address
-
Texas A&M University
Chemical Engineering
3122 TAMU
College Station, TX 77843-3122
USA
Other
In the News
- Committing to Solving Humanity's Grand Challenges News Release
- yuekuo@tamu.edu