Radiation Exposure Effect on Amorphous Silicon Thin Film Transistors
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Amorphous silicon thin film transistors have been exposed to Co-60 radiation. Electrical characteristics of transistors at different experimental stages have been measured and compared. The gamma-ray irradiation damaged bulk films and interfaces, which caused the shift of the transfer characteristics to the positive gate voltage direction indicating more negatives charge trapped. The transistor's field effect mobility, on/off current ratio, and interface state density were deteriorated by the irradiation process. Thermal annealing almost restored the electrical characteristics to the original state. © The Electrochemical Society.
author list (cited authors)
Nominanda, H., Kuo, Y., Chen, C., & Hwang, C.