Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C
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The low-temperature plasma-enhanced chemical vapor deposition of SiNx has been studied. The main process parameters are: temperature, i.e., between 100°C and 250°C, and power, i.e., between 300 and 700 W. Variation of the film's deposition rate and bond structure with respect to these process parameters were investigated. The influence of the plasma power to film's characteristics at the low substrate temperature is more pronounced than that at the high substrate temperature. The influence of the plasma condition to the reaction mechanism is discussed. © 2002 Elsevier Science Ltd. All rights reserved.
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