Plasma-enhanced chemical vapor deposition of silicon nitride below 250 degrees C uri icon

abstract

  • The low-temperature plasma-enhanced chemical vapor deposition of SiNx has been studied. The main process parameters are: temperature, i.e., between 100C and 250C, and power, i.e., between 300 and 700 W. Variation of the film's deposition rate and bond structure with respect to these process parameters were investigated. The influence of the plasma power to film's characteristics at the low substrate temperature is more pronounced than that at the high substrate temperature. The influence of the plasma condition to the reaction mechanism is discussed. 2002 Elsevier Science Ltd. All rights reserved.

published proceedings

  • VACUUM

author list (cited authors)

  • Kuo, Y., & Lee, H. H.

citation count

  • 15

complete list of authors

  • Kuo, Y||Lee, HH

publication date

  • August 2002

published in