publication venue for
- A new, room-temperature, high-rate plasma-based copper etch process. 74:473-477. 2004
- Effects of the TaNx interface layer on doped tantalum oxide high-k films. 74:539-547. 2004
- Effect of carrier gas on the deposition of titanium carbo-nitride coatings by a novel organo-metallic plasma immersion ion processing technique. 67:169-175. 2002
- Plasma-enhanced chemical vapor deposition of silicon nitride below 250°C. 66:299-303. 2002
- Some issues on hydrogen and hydrogenation of plasma enhanced chemical vapor deposited films in a-Si:H thin-film transistors. 59:484-491. 2000
- Surface reactivity studies of bimetallic complexes, (η5-C5Me5)Re(NO)(PPh3)(CC)n(Ph3P)(ON)Re(η5-C5Me5) (n=2,4,6): candidates for molecular wires. 56:115-121. 2000
- Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors—a critical review. 51:741-745. 1998
- Reactive ion etching of indium tin oxide by SiCl4-based plasmas—substrate temperature effect. 51:777-779. 1998
- Influence of intrinsic electric fields on passive film chemistry and structure. 46:1397-1399. 1995
- Metal and elastomer seal tests for accelerator applications. 41:1924-1927. 1990
- Sputter deposition of nm-thick films for passivation of organic pellicles 2006
- Modeling and simulation of plasma enhanced processing for integrated circuit fabrication 2002
- A mass spectrometric method for probing surface structure 1995
- Analysis of CaF2Si (111) using coaxial impact-collision ion scattering spectroscopy 1990