Effects of the TaNx interface layer on doped tantalum oxide high-k films Academic Article uri icon

abstract

  • A 5Å tantalum nitride (TaNx) thin film was deposited between the Hf- or Zr-doped TaOx high dielectric constant (high-k) film and silicon wafer to hinder the formation of the SiOx interface layer during the subsequent high-temperature annealing step. This interface contributes to the lower leakage current density, higher dielectric constant, and larger charge trapping. The improvement is attributed to the formation of the TaOxNy interfacial layer, which was confirmed by secondary ion mass spectroscopy and X-ray photoelectron spectroscopy. © 2004 Elsevier Ltd. All rights reserved.

author list (cited authors)

  • Lu, J., Kuo, Y., Tewg, J., & Schueler, B.

citation count

  • 8

publication date

  • June 2004

published in