Plasma enhanced chemical vapor deposited silicon nitride as a gate dielectric film for amorphous silicon thin film transistors - a critical review Academic Article uri icon

abstract

  • Plasma enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) is the dominate gate dielectric material for the amorphous silicon (a-Si:H) thin film transistors (TFTs) today. In this paper, the author critically reviewed several major issues in this field. Two subjects are included in the discussion: effects of SiNxgate dielectric material properties to TFT devices and the large area PECVD SiNxprocesses. The first subject includes: the bulk film characteristics, a-Si:H TFTperformance related to the SiNx/a-Si:H interface properties, such as morphology and band gaps, the dual SiNxgate dielectric structure, and the influence of a-Si:H deposition processes to transistor performance. The second subject is concentrated on the large area PECVD SiNxprocesses which include uniformity, film characteristics, etc. At the end, a unified relationship between the TFT's threshold voltage and the SiNx refractive index is presented. In the conclusion, relationships among SiNxprocess, material, and TFT device characteristics are summarized. 1998 Elsevier Science Ltd. All rights reserved.

published proceedings

  • VACUUM

altmetric score

  • 3

author list (cited authors)

  • Kuo, Y.

citation count

  • 34

complete list of authors

  • Kuo, Y

publication date

  • December 1998

published in