(Invited) Performance and Reliability of Nanocrystals Embedded High-k Nonvolatile Memories Conference Paper uri icon

abstract

  • The nanocrystals embedded high-k dielectric structure is promising for the high-density nonvolatile memories. In this paper, the author discussed the performance and reliability of MOS capacitors composed of various nanocrystalline ITO, ZnO, and RuO embedded zirconium doped HfO 2 high-k dielectrics. This kind of device is easily fabricated with thin film deposition methods. Material properties of the embedded nanocrystals are critical to device's memory functions and reliability, such as the charge trapping characteristics and the breakdown mechanism. ┬ęThe Electrochemical Society.

author list (cited authors)

  • Kuo, Y.

citation count

  • 0

publication date

  • December 2019