Amorphous silicon based TFT and MIS nonvolatile memories Conference Paper uri icon

abstract

  • The amorphous silicon (a-Si:H) TFT and MIS capacitor, which include an a-Si:H layer embedded in the silicon nitride gate dielectric layer, have been prepared and characterized for memory functions. Large shifts of the threshold voltage and flat band voltage were detected in the current-voltage and capacitance-voltage hysteresis measurements. The embedded a-Si:H film functioned as a charge retention medium that stores and releases injected carriers. The device's memory capacity varied with the thickness of the embedded a-Si:H layer and the sweep voltage. These low-cost memory devices can be used in many low-temperature prepared circuits. © 2007 Materials Research Society.

author list (cited authors)

  • Kuo, Y., & Nominanda, H.

publication date

  • December 2007