Amorphous silicon based TFT and MIS nonvolatile memories Conference Paper

abstract

• The amorphous silicon (a-Si:H) TFT and MIS capacitor, which include an a-Si:H layer embedded in the silicon nitride gate dielectric layer, have been prepared and characterized for memory functions. Large shifts of the threshold voltage and flat band voltage were detected in the current-voltage and capacitance-voltage hysteresis measurements. The embedded a-Si:H film functioned as a charge retention medium that stores and releases injected carriers. The device's memory capacity varied with the thickness of the embedded a-Si:H layer and the sweep voltage. These low-cost memory devices can be used in many low-temperature prepared circuits. 2007 Materials Research Society.

authors

• Kuo, Yue

published proceedings

• AMORPHOUS AND POLYCRYSTALLINE THIN-FILM SILICON SCIENCE AND TECHNOLOGY 2007

author list (cited authors)

• Kuo, Y., & Nominanda, H.

complete list of authors

• Kuo, Yue||Nominanda, Helinda

publication date

• December 2007

published in

• MRS Online Proceedings Library  Journal

International Standard Book Number (ISBN) 13

• 978-1-55899-949-7

start page

• 225

end page

• 230

volume

• 989