Mixed Oxide High-k Gate Dielectrics - Interface Layer Structure, Breakdown Mechanism, and Memories Conference Paper uri icon

abstract

  • Mixed metal oxide high-k films have many advantageous dielectric properties over conventional metal oxides. In this paper, three major subjects on the mixed oxide gate stack prepared by the sputtering method, i.e., dopant influence on interface layer structures, double-layer gate stack breakdown mechanism, and new CMOS-type nonvolatile memories based on nanocrystals embedded doped oxide high-k films, are examined and discussed. copyright The Electrochemical Society.

author list (cited authors)

  • Kuo, Y.

citation count

  • 15

publication date

  • December 2019