Co-Planar Nano-Resistor Devices Conference Paper uri icon

abstract

  • 2019 Electrochemical Society Inc.. All rights reserved. Co-planar structured nano-resistor devices made from co-planar MOS capacitors with a thin high-k gate dielectric have been fabricated and studied. The complete device was made of a 2-mask process with IC compatible materials. Nano-resistors were self-aligned to the gate electrode after a dielectric breakdown process. The broad band white light was emitted from the device upon the application of a gate voltage larger than the breakdown voltage due to the thermal excitation of nano-resistors. Optical characteristics of the co-planar structured device were compared with those of a non co-planar structured device. The main advantage of the co-planar structured device is that is can be driven without being interfered by adjacent devices. Therefore, a large number of device can be fabricated into an array for various electronic and optoelectronic applications.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Kuo, Y.

publication date

  • January 1, 2019 11:11 AM