Deposition of richly conductive n(+) silicon film for a-Si : H thin film transistor Conference Paper uri icon

abstract

  • ABSTRACTPlasma enhanced chemical vapor deposition of phosphorus-doped n+ silicon film over a wide range of process conditions has been studied. The deposited films were characterized with SIMS, Raman, and XRD. An unusually abrupt change of resistivity over a small SiH4(1% PH3) flow rate has been observed and was correlated to the variation of the film's morphology from amorphous to micrycrystalline. The grains are less than 50 in size and has strong <111> orientation. Amorphous silicon thin film transistors with microcrystalline n+ source and drain contacts have consistently good device characteristics. However, the contact resistance is comparable to the channel resistance when the channel length approaches 1 micrometer.

published proceedings

  • AMORPHOUS AND MICROCRYSTALLINE SILICON TECHNOLOGY-1998

author list (cited authors)

  • Kuo, Y., & Latzko, K.

citation count

  • 3

complete list of authors

  • Kuo, Y||Latzko, K

publication date

  • January 1998