Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model
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abstract
The solid-state incandescent light-emitting device is an emerging optoelectronic device that is made on a silicon wafer using IC compatible materials and processes. Light emission takes place by thermal excitation of numerous nano-sized, high-resistivity conductive paths, i.e., nano-resistors, formed from the dielectric breakdown of an MOS capacitor. A simulation method that uses comsol multiphysics, python, and matlab to predict the temperature, current density, and light intensity distributions of various nano-resistor patterns in the device is presented. The Joule heating and blackbody radiation effects are correlated to the temperature and light emission profiles. The effect of mesh quality and depth on these distributions is also investigated. Electrical and optoelectronic properties of the nano-resistors calculated from this new program are consistent with the experimental results.
