publication venue for
- Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model. 40:052209-052209. 2022
- Enhanced sputter and secondary ion yields using MeV gold nanoparticle beams delivered by the Andromede facility. 38:044008-044008. 2020
- Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation. 36:011207-011207. 2018
- Characterization of individual free-standing nano-objects by cluster SIMS in transmission. 34:03h117-03H117. 2016
- Characterization of nanometric inclusions via nanoprojectile impacts. 34:03h104-03H104. 2016
- Impact of parallelism on data volumes for a multibeam mask writer. 34:06kf01-06KF01. 2016
- Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping. 34:06k602-06K602. 2016
- Lossless layout image compression algorithms for electron-beam direct-write lithography. 33:06fd01-06FD01. 2015
- Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack. 32:03d116-03D116. 2014
- An information theoretic perspective on e-beam direct-write as complementary lithography. 32:06f502-06F502. 2014
- Challenges of contact module integration for GaN-based devices in a Si-CMOS environment. 32:030606-030606. 2014
- Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers. 32:012202-012202. 2014
- Optical studies of the effect of oxidation on GaN. 32:011213-011213. 2014
- Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces. 32:011215-011215. 2014
- White light emission from ultrathin tungsten metal oxide film. 32:011208-011208. 2014
- Near-edge x-ray absorption fine structure spectroscopy study of nitrogen incorporation in chemically reduced graphene oxide. 31:041204-041204. 2013
- Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum. 31:030605-030605. 2013
- Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001). 31:04d101-04D101. 2013
- Wet etching silicon nanofins with (111)-oriented sidewalls. 31:021801-021801. 2013
- Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns. 30:06f304-06F304. 2012
- In situ near-edge x-ray absorption fine structure spectroscopy investigation of the thermal defunctionalization of graphene oxide. 30:061206-061206. 2012
- Template-assisted assembly of ZnO nanorods with postdeposition growth. 30:06ff01. 2012
- Near-edge x-ray absorption fine structure spectroscopy studies of charge redistribution at graphene/dielectric interfaces. 30:041205-041205. 2012
- Process effects of copper film over a step etched with a plasma-based process. 30:021204-021204. 2012
- Bilayer graphene by bonding CVD graphene to epitaxial graphene. 30:03d110-03D110. 2012
- Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane. 30:03d104-03D104. 2012
- Work function extraction of metal gates with alternate channel materials. 30:022202-022202. 2012
- Single-walled carbon nanotube alignment by grating-guided electrostatic self-assembly. 28:1318-1321. 2010
- Solid-state dye-sensitized solar cell based on semiconducting nanomaterials. 27:3073-3077. 2009
- Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2 GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer. 26:624-626. 2008
- Precise positioning of single-walled carbon nanotubes by ac dielectrophoresis. 24:3173-3178. 2006
- Investigation of the magnetic susceptibility of nanocomposites obtained in zero-field-cooled conditions. 24:321-325. 2006
- Nanofabrication module integrated with optical aligner. 24:539-542. 2006
- Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric. 24:349-357. 2006
- Thermally actuated probe array for parallel dip-pen nanolithography. 22:2563-2567. 2004
- Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing. 22:1669-1671. 2004
- Ultrashallow junction formation by point defect engineering. 22:302-305. 2004
- Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered MoSiN/SiC thin films. 17:1329-1335. 1999
- Optical properties of diamond-like carbon synthesized by plasma immersion ion processing. 17:822-827. 1999
- Processing of diamondlike carbon using plasma immersion ion deposition. 17:818-821. 1999
- AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE. 3:1217-1220. 1985
- DANGLING BONDS AND SCHOTTKY BARRIERS. 3:1162-1166. 1985
- THEORY OF SI/NISI2 INTERFACE STATES. 3:1221-1223. 1985
- THEORY OF SCHOTTKY-BARRIER FORMATION FOR TRANSITION-METALS ON SI,GE,DIAMOND, AND SIX GE1-X ALLOYS. 2:491-495. 1984
- THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS. 2:449-452. 1984
- Effects of an orderdisorder transition on surface deep levels in metastable (GaAs)1 x Ge2 x. 1:747-750. 1983
- FERMI-LEVEL PINNING AT HETEROJUNCTIONS. 1:401-403. 1983
- EPITAXIAL-GROWTH OF AG FILMS ON GE(001). 1:553-557. 1983
- Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon 2002
- Defect engineering: An approach on ultrashallow junction in silicon 2002