Theory of surface-defect states and Schottky barrier heights: Application to InAs
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This paper reports calculations of the deep levels associated with surface s- and p-bonded substitutional point defects in InAs and shows how these results fit into an emerging unified microscopic picture of surface deep levels and Schottky barrier heights in Al//xGa//1// minus //xAs, GaAs//1// minus //xP//x, In//1// minus //xGa//xP, and In//1// minus //xGa//xAs.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
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