Theory of surface-defect states and Schottky barrier heights: Application to InAs Academic Article uri icon


  • This paper reports calculations of the deep levels associated with surface s- and p-bonded substitutional point defects in InAs and shows how these results fit into an emerging unified microscopic picture of surface deep levels and Schottky barrier heights in Al//xGa//1// minus //xAs, GaAs//1// minus //xP//x, In//1// minus //xGa//xP, and In//1// minus //xGa//xAs.

published proceedings

  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

author list (cited authors)

  • Allen, R. E.

citation count

  • 38

complete list of authors

  • Allen, Roland E

publication date

  • January 1984