THEORY OF SCHOTTKY-BARRIER FORMATION FOR TRANSITION-METALS ON SI,GE,DIAMOND, AND SIX GE1-X ALLOYS Academic Article uri icon

abstract

  • The heights of the Schottky barriers for various transition metals on Si, Ge, diamond, and Si//x Ge//1// minus //x alloys are calculated using a defect model in which the Fermi energy is pinned by deep levels associated with interfacial dangling bonds.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

  • SANKEY, O. F., ALLEN, R. E., & DOW, J. D.

citation count

  • 21

complete list of authors

  • SANKEY, OF||ALLEN, RE||DOW, JD

publication date

  • January 1984