Theory of Schottky barrier formation for transition metals on Si, Ge, diamond, and Six Ge1−x alloys Academic Article uri icon

abstract

  • The heights of the Schottky barriers for various transition metals on Si, Ge, diamond, and Si//x Ge//1// minus //x alloys are calculated using a defect model in which the Fermi energy is pinned by deep levels associated with interfacial dangling bonds.

author list (cited authors)

  • Sankey, O. F.

citation count

  • 21

publication date

  • January 1984