Defect engineering: An approach on ultrashallow junction in silicon
- Additional Document Info
- View All
Ultrashallow junction formation in silicon was demonstrated by thermal diffusion of surface deposited boron into an ion implantation irradiated silicon substrate. 10 nm thick boron layers were deposited onto an ion implantation irradiated substrate, by electron-gun deposition. Samples were annealed using rapid thermal processor under continuous nitrogen flow. Results indicated that the surface deposited boron experienced a suppressed diffusion during annealing if the Si substrate was preimplanted with 50 or 500 keV, 51014cm-2silicon ions.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
author list (cited authors)
Shao, L., Lu, X., Wang, X., Rusakova, I., Liu, J., & Chu, W.
complete list of authors
Shao, Lin||Lu, Xinming||Wang, Xuemei||Rusakova, Irene||Liu, Jiarui||Chu, Wei-Kan