Defect engineering: An approach on ultrashallow junction in silicon Conference Paper uri icon

abstract

  • Ultrashallow junction formation in silicon was demonstrated by thermal diffusion of surface deposited boron into an ion implantation irradiated silicon substrate. 10 nm thick boron layers were deposited onto an ion implantation irradiated substrate, by electron-gun deposition. Samples were annealed using rapid thermal processor under continuous nitrogen flow. Results indicated that the surface deposited boron experienced a suppressed diffusion during annealing if the Si substrate was preimplanted with 50 or 500 keV, 51014cm-2silicon ions.

published proceedings

  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

author list (cited authors)

  • Shao, L., Lu, X., Wang, X., Rusakova, I., Liu, J., & Chu, W.

citation count

  • 1

complete list of authors

  • Shao, Lin||Lu, Xinming||Wang, Xuemei||Rusakova, Irene||Liu, Jiarui||Chu, Wei-Kan

publication date

  • January 2002