Defect engineering: An approach on ultrashallow junction in silicon Conference Paper

abstract

• Ultrashallow junction formation in silicon was demonstrated by thermal diffusion of surface deposited boron into an ion implantation irradiated silicon substrate. 10 nm thick boron layers were deposited onto an ion implantation irradiated substrate, by electron-gun deposition. Samples were annealed using rapid thermal processor under continuous nitrogen flow. Results indicated that the surface deposited boron experienced a suppressed diffusion during annealing if the Si substrate was preimplanted with 50 or 500 keV, 51014cm-2silicon ions.

authors

• Shao, Lin

published proceedings

• Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

author list (cited authors)

• Shao, L., Lu, X., Wang, X., Rusakova, I., Liu, J., & Chu, W.

citation count

• 1

complete list of authors

• Shao, Lin||Lu, Xinming||Wang, Xuemei||Rusakova, Irene||Liu, Jiarui||Chu, Wei-Kan

publication date

• January 2002

publisher

• American Vacuum Society  Publisher

published in

• n2166-2746ISSN  Journal

Digital Object Identifier (DOI)

• 10.1116/1.1424283

start page

• 419

end page

• 421

volume

• 20

issue

• 1

URL

• http://dx.doi.org/10.1116/1.1424283