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• Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model 2022
• Enhanced sputter and secondary ion yields using MeV gold nanoparticle beams delivered by the Andromede facility 2020
• Heteroepitaxial growth of beta-Ga2O3 films on SiC via molecular beam epitaxy.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  38:063406-063406. 2020
• Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation 2018
• Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  35:03e101-03E101. 2017
• Characterization of individual free-standing nano-objects by cluster SIMS in transmission 2016
• Characterization of nanometric inclusions via nanoprojectile impacts 2016
• Impact of parallelism on data volumes for a multibeam mask writer 2016
• Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping 2016
• Lossless layout image compression algorithms for electron-beam direct-write lithography 2015
• Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack 2014
• An information theoretic perspective on e-beam direct-write as complementary lithography 2014
• Challenges of contact module integration for GaN-based devices in a Si-CMOS environment 2014
• Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers 2014
• Optical studies of the effect of oxidation on GaN 2014
• Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces 2014
• White light emission from ultrathin tungsten metal oxide film 2014
• Near-edge x-ray absorption fine structure spectroscopy study of nitrogen incorporation in chemically reduced graphene oxide 2013
• Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum 2013
• Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001) 2013
• Fabrication of arbitrarily shaped silicon and silicon oxide nanostructures using tip-based nanofabrication 2013
• Wet etching silicon nanofins with (111)-oriented sidewalls 2013
• Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns 2012
• In situ near-edge x-ray absorption fine structure spectroscopy investigation of the thermal defunctionalization of graphene oxide 2012
• Near-edge x-ray absorption fine structure spectroscopy studies of charge redistribution at graphene/dielectric interfaces 2012
• Process effects of copper film over a step etched with a plasma-based process 2012
• Bilayer graphene by bonding CVD graphene to epitaxial graphene 2012
• Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane 2012
• Template-assisted assembly of ZnO nanorods with postdeposition growth 2012
• Work function extraction of metal gates with alternate channel materials 2012
• Electrical and microstructural properties of N+ ion-implanted ZnO and ZnO:Ag thin films.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  29:03a108-03A108. 2011
• Single-walled carbon nanotube alignment by grating-guided electrostatic self-assembly 2010
• Lateral-flow particle filtration and separation with multilayer microfluidic channels.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  27:3115-3119. 2009
• Solid-state dye-sensitized solar cell based on semiconducting nanomaterials 2009
• Sub-15 nm nanoimprint molds and pattern transfer.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  27:2837-2840. 2009
• Si-containing block copolymers for self-assembled nanolithography.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  26:2489-2494. 2008
• Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2 GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer 2008
• Patterning chalcogenide glass by direct resist-free thermal nanoimprint.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  26:606-610. 2008
• Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  25:1276-1279. 2007
• Optimal temperature for development of poly(methylmethacrylate).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  25:2013-2016. 2007
• Investigation of the magnetic susceptibility of nanocomposites obtained in zero-field-cooled conditions 2006
• Nanofabrication module integrated with optical aligner 2006
• Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric 2006
• Precise positioning of single-walled carbon nanotubes by ac dielectrophoresis 2006
• Synthesis of metallic nanocrystals with size and depth control: A case study.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  23:1470-1473. 2005
• Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  22:2342-2346. 2004
• Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  22:1223-1228. 2004
• Fabrication and characterization of a monolithic thin-film edge emitter device with zinc-oxide-tungsten-based thin-film phosphor.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  22:165-170. 2004
• Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing 2004
• Thermally actuated probe array for parallel dip-pen nanolithography 2004
• Ultrashallow junction formation by point defect engineering 2004
• Use of the focused ion beam technique to produce a sharp spherical diamond indenter for sub-10 nm nanoindentation measurements.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  22:668-672. 2004
• Influence of carbon content and average energy of deposited ions on mechanical and optical properties of SiCN films grown by plasma ion immersion processing.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  21:1909-1914. 2003
• The role of trapped Ar atoms in the mechanical properties of boron carbide films deposited by dc-magnetron sputtering.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  21:1639-1643. 2003
• Cleaning of Si and properties of the HfO2Si interface.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  21:718-722. 2003
• Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  20:638-642. 2002
• Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  20:2183-2186. 2002
• Stoichiometric and Ar-ion Sputtered Uranium Dioxide (111) Single Crystal by XPS.  Surface Science Spectra.  8:297-302. 2001
• Electrochemical characterization and surface analysis of bulk amorphous alloys in aqueous solutions at different pH.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  19:1447-1453. 2001
• Structure, stability, and mechanical properties of epitaxial W/NbN superlattices.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  19:952-957. 2001
• Synthesis of fluorinated diamond-like carbon films by the plasma immersion ion processing technique.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  19:782-784. 2001
• Plasma immersion ion cleaning of oxidized steel surfaces using hexafluoroethane and argon plasmas.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  19:2773-2778. 2001
• Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  18:2143-2148. 2000
• Structure, hardness, and tribological properties of reactive magnetron sputtered chromium nitride films.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  18:30-36. 2000
• The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  18:2517-2521. 2000
• Characterization and enhanced properties of plasma immersion ion processed diamond-like carbon films.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  17:2525-2530. 1999
• Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  17:3077-3080. 1999
• Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered MoSiN/SiC thin films 1999
• Optical properties of diamond-like carbon synthesized by plasma immersion ion processing 1999
• Processing of diamondlike carbon using plasma immersion ion deposition 1999
• Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  16:1142-1144. 1998
• Fabrication and characterization of gated porous silicon cathode field emission arrays.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  16:777-779. 1998
• Hard boronsuboxide-based films deposited in a sputter-sourced, high-density plasma deposition system.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  15:2623-2626. 1997
• Cyclization and related reactions of iodoethanol on Ag(110).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  15:1667-1673. 1997
• Steady-state catalytic C-C bond formation on reduced TiO2 surfaces.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  15:1586-1591. 1997
• High-temperature structural stability of MoSi2-based nanolayer composites.  Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society.  13:1126-1126. 1995
• INTERCHAIN VACANCY MIGRATION OF GAAS(110).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  12:1855-1857. 1994
• KNIFE-EDGE THIN-FILM FIELD-EMISSION CATHODES ON (110) SILICON-WAFERS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:644-647. 1994
• FABRICATION OF A NANOSCALE, INPLANE GATED QUANTUM-WIRE BY LOW-ENERGY ION EXPOSURE.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:8-13. 1994
• IMPROVED MONOLITHIC VACUUM FIELD-EMISSION DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:666-671. 1994
• APPLICATION OF LUMINESCENCE TECHNIQUES TO PROBE SURFACE-ADSORBATE INTERACTIONS ON OXIDE SINGLE-CRYSTALS.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  11:209-218. 1993
• PHASE-STABILITY VERSUS THE LATTICE MISMATCH OF (100)CO1-XGAX THIN-FILMS ON (100)GAAS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  9:2154-2157. 1991
• THE IMAGE POTENTIAL IN SCANNING TUNNELING MICROSCOPY OF SEMICONDUCTOR SURFACES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  9:2399-2404. 1991
• FABRICATION OF A GATED GALLIUM-ARSENIDE HETEROSTRUCTURE RESONANT TUNNELING DIODE.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  8:393-396. 1990
• A BOLT-ON DEPOSITION SOURCE FOR ULTRAHIGH-VACUUM GROWTH OF INTERMETALLIC COMPOUND FILMS.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  7:2813-2814. 1989
• SIMULATIONS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION AND OF CLUSTER FORMATION ON GAAS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  7:729-732. 1989
• REACTION OF AU4 AND GA(CH3)3 WITH GAAS(110).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  7:790-791. 1989
• CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF THE INTERFACES BETWEEN PHYSICAL VAPOR-DEPOSITED TINX COATINGS AND STEEL SUBSTRATES.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  7:2486-2490. 1989
• REACTION OF DIMERS AND DIATOMIC-MOLECULES WITH GAAS(110) - MOLECULAR-DYNAMICS COMPUTER-SIMULATIONS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  6:1302-1305. 1988
• FINGERPRINTING OF POLYMER SURFACES WITH CF-252 PARTICLE DESORPTION MASS-SPECTROMETRY.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  6:946-949. 1988
• GROWTH AND LUMINESCENCE SPECTROSCOPY OF A CUCL QUANTUM WELL STRUCTURE.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  6:1950-1952. 1988
• MULTIPLE INITIAL CHEMISORPTION SITES - AL ON GAAS(110).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  6:1491-1494. 1988
• THE ATOMIC STRUCTURES OF THE SI(111)-SQUARE-ROOT-3XSQUARE-ROOT-3-AU AND SI(111)-6X6-AU SURFACES STUDIED BY LOW-ENERGY ION-SCATTERING.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  6:689-691. 1988
• INSB-CDTE INTERFACES - A COMBINED STUDY BY SOFT-X-RAY PHOTOEMISSION, LOW-ENERGY ELECTRON-DIFFRACTION, AND RAMAN-SPECTROSCOPY.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  5:1233-1238. 1987
• Wear and friction measurements of ion beam induced FeTi surface alloys on AISI 304 stainless steel.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  4:2997-3001. 1986
• INTRINSIC INTERFACE STATES AND DEFECT STATES FOR SI/NISI2(111).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  4:2328-2330. 1986
• QUANTITATIVE SURFACE STRUCTURAL DETERMINATION USING IMPACT COLLISION ION-SCATTERING SPECTROSCOPY.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  4:1274-1277. 1986
• Calibration of an energy dispersive spectroscopy k factor using Rutherford backscattering.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  3:1895-1902. 1985
• AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE 1985
• DANGLING BONDS AND SCHOTTKY BARRIERS 1985
• THEORY OF SI/NISI2 INTERFACE STATES 1985
• A technique for the production of a thin film with a linearly varying composition.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  3:1903-1906. 1985
• ROLLING-CONTACT FATIGUE BEHAVIOR OF CU AND TIN COATINGS ON BEARING STEEL SUBSTRATES.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  3:2348-2353. 1985
• CHARACTERIZATION OF THE SURFACE NET AND ELECTRONIC-STRUCTURE OF AUGA2(001).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films.  2:534-537. 1984
• THEORY OF SCHOTTKY-BARRIER FORMATION FOR TRANSITION-METALS ON SI,GE,DIAMOND, AND SIX GE1-X ALLOYS 1984
• THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS 1984
• EPITAXIAL-GROWTH OF AG FILMS ON GE(001) 1983
• Effects of an orderdisorder transition on surface deep levels in metastable (GaAs)1xGe2x 1983
• FERMI-LEVEL PINNING AT HETEROJUNCTIONS 1983
• BOUND AND RESONANT SURFACE-STATES AT THE (110) SURFACES OF ALSB, ALAS, AND ALP.  Journal of Vacuum Science and Technology.  21:548-550. 1982
• CHANNELING MEASUREMENTS OF LATTICE DISORDER AT THE GAAS-INAS(100) HETEROJUNCTION.  Journal of Vacuum Science and Technology.  21:386-388. 1982
• SURFACE-STRUCTURE DETERMINATION USING ION-SCATTERING SPECTROSCOPY.  Journal of Vacuum Science and Technology.  20:770-774. 1982
• Surface defects and Fermilevel pinning in InP.  Journal of Vacuum Science and Technology.  20:659-661. 1982
• Effects of the environment on pointdefect energy levels in semiconductors.  Journal of Vacuum Science and Technology.  19:502-507. 1981
• Unified theory of pointdefect electronic states, core excitons, and intrinsic electronic states at semiconductor surfaces.  Journal of Vacuum Science and Technology.  19:383-387. 1981
• THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES.  Journal of Vacuum Science and Technology.  17:993-996. 1980
• Ultrahigh vacuum system for ISABELLE full cell.  Journal of Vacuum Science and Technology.  17:342-344. 1980
• SIMS of transfer ribonucleic acid molecules encapsulated between free-standing graphene sheets..  Biointerphases: an open access journal for the biomaterials interface community. 02A324-02A324. 2016
• Preparation of ternary alloy libraries for high-throughput screening of material properties by means of thick film deposition and interdiffusion: Benefits and limitations.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1788-1792. 2004
• Nonlithographic approach to nanostructure fabrication using a scanned electrospinning source.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 2994-2997. 2003
• Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon.  992-994. 2002
• Defect engineering: An approach on ultrashallow junction in silicon.  419-421. 2002
• Plasma oxidation as a tool to design oxide films at low temperatures.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1965-1970. 2001
• Synthesis of diamondlike carbon films with superlow friction and wear properties.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1987-1992. 2000
• Investigation of framework and cation substitutions in Keggin-type heteropoly acids probed by scanning tunneling microscopy and tunneling spectroscopy.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1299-1304. 1997
• Ethylene oxide interaction with Pd surfaces: Experimental and theoretical results.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1469-1474. 1996
• Role of interface microstructure in rectifying metal/semiconductor contacts: Ballistic electron emission observations correlated to microstructure.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1238-1242. 1996
• Porous silicon field emission cathode development.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1899-1901. 1996
• CARRIER CAPTURE AS A MECHANISM FOR DEFECT MIGRATION AT SEMICONDUCTOR SURFACES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1144-1149. 1995
• BLUE-LIGHT EMISSION OBSERVED IN A MONOLITHIC THIN-FILM EDGE EMISSION VACUUM MICROELECTRONIC DEVICE.  Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society. 500-504. 1995
• LATERAL VARIATION IN THE SCHOTTKY-BARRIER HEIGHT OF AU/PTSI/(100)SI DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 2634-2638. 1994
• LASER-INDUCED DESORPTION OF SMALL ALCOHOLS FROM AG(111) BY RESONANT VIBRATIONAL-EXCITATION.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 2084-2089. 1993
• SITE REQUIREMENTS OF REACTIONS ON OXIDE SURFACES.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 2162-2168. 1993
• MANUFACTURABLE VACUUM FIELD-EMISSION DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 505-510. 1993
• NONLINEAR-REGRESSION TECHNIQUE FOR PARAMETER EXTRACTION FROM FIELD-EMISSION DATA.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 379-382. 1993
• ENERGY SURFACE AND DYNAMICS OF SI(100).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 2052-2054. 1992
• OBSERVED ION MIXING OF AU WITH GAAS(001) DURING LOW-ENERGY ION-SCATTERING.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 2606-2608. 1992
• POLARIZATION OF ELECTRONIC CHARGE AND DISTORTION OF SURFACE GEOMETRY BY A SCANNING TUNNELING MICROSCOPY TIP - SI(100).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 974-977. 1992
• DIFFUSION OF SI ATOMS AND DIMERS ON SI(100).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 876-879. 1991
• DIMERIZATION AND ADSORPTION OF SI ON THE SI(100) SURFACE.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 656-658. 1991
• PLASMA DESORPTION MASS-SPECTROMETRY WITH COINCIDENCE COUNTING FOR THE ANALYSIS OF POLYMER SURFACES.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1300-1306. 1991
• SURFACE REACTIVITY OF TITANIUM ALUMINUM-ALLOYS - TI3AL, TIAL, AND TIAL3.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1610-1615. 1991
• KINETICS AND DYNAMICS ON SI(100).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 685-689. 1991
• ORDERED ARRAYS OF PROTEINS ON GRAPHITE OBSERVED BY SCANNING TUNNELING MICROSCOPY.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1219-1222. 1991
• SUBSURFACE CHEMISORPTION OF SMALL ATOMS ON SEMICONDUCTORS - B, C, AND N ON GAAS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 761-763. 1991
• EFFECT OF POSTDEPOSITION ANNEALING ON STRUCTURE AND CHEMISTRY OF THE TIN FILM STEEL SUBSTRATE INTERFACES.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 439-443. 1991
• ELECTRONIC STATES OF SB, BI, AU, AND SN CLUSTERS ON GAAS(110).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 900-902. 1990
• A NEW EXPERIMENTAL-METHOD FOR DETERMINING SECONDARY ION YIELDS FROM SURFACES BOMBARDED BY COMPLEX HETEROGENEOUS IONS.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 2265-2268. 1990
• REACTIVE ION ETCHING OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION AMORPHOUS-SILICON AND SILICON-NITRIDE - FEEDING GAS EFFECTS.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1702-1705. 1990
• SLOPE CONTROL OF MOLYBDENUM LINES ETCHED WITH REACTIVE ION ETCHING.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1529-1532. 1990
• IMPACT COLLISION ION-SCATTERING SPECTROSCOPY OF AG(110) USING LI-7+ AND HE-4+.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 808-809. 1988
• TERNARY SOLID-PHASE EQUILIBRIA IN THE SYSTEMS (AG,IN,AU)-(CD,HG)-TE.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1564-1564. 1988
• ANALYSIS OF CHEMICAL BONDING IN TIC, TIN, AND TIO USING 2ND-PRINCIPLES BAND STRUCTURES FROM PHOTOEMISSION DATA.  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 1603-1603. 1986
• ELECTRONIC-STRUCTURE INVESTIGATION OF EPITAXIAL NICKEL SILICIDES ON SI(001).  Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films. 269-270. 1984