American Vacuum Society Publisher

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• Comparison of temperature, current density, and light intensity distributions of nano-resistor patterns for an improved solid state incandescent light emitting device simulation model.  Journal of Vacuum Science and Technology B.  40:052209-052209. 2022
• Enhanced sputter and secondary ion yields using MeV gold nanoparticle beams delivered by the Andromede facility.  Journal of Vacuum Science and Technology B.  38:044008. 2020
• Heteroepitaxial growth of beta-Ga2O3 films on SiC via molecular beam epitaxy.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  38:063406-063406. 2020
• Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation 2018
• Increased drift carrier lifetime in semiconducting boron carbides deposited by plasma enhanced chemical vapor deposition from carboranes and benzene 2017
• Impact of parallelism on data volumes for a multibeam mask writer.  Journal of Vacuum Science and Technology B.  34:06kf01. 2016
• Characterization of individual free-standing nano-objects by cluster SIMS in transmission.  Journal of Vacuum Science and Technology B.  34:03h117. 2016
• Characterization of nanometric inclusions via nanoprojectile impacts.  Journal of Vacuum Science and Technology B.  34:03h104. 2016
• Mask registration and lithography platform portability for nitride fin-based field effect transistors prototyping.  Journal of Vacuum Science and Technology B.  34:06k602-06K602. 2016
• Lossless layout image compression algorithms for electron-beam direct-write lithography 2015
• An information theoretic perspective on e-beam direct-write as complementary lithography 2014
• Nonvolatile memory devices with AlOx embedded Zr-doped HfO2 high-k gate dielectric stack.  Journal of Vacuum Science and Technology B.  32:03d116-03D116. 2014
• Challenges of contact module integration for GaN-based devices in a Si-CMOS environment.  Journal of Vacuum Science and Technology B.  32:030606-030606. 2014
• Electronic transport properties of top-gated epitaxial-graphene nanoribbon field-effect transistors on SiC wafers.  Journal of Vacuum Science and Technology B.  32:012202-012202. 2014
• Optical studies of the effect of oxidation on GaN.  Journal of Vacuum Science and Technology B.  32:011213-011213. 2014
• Microwave-induced nucleation of conducting graphitic domains on silicon carbide surfaces.  Journal of Vacuum Science and Technology B.  32:011215-011215. 2014
• White light emission from ultrathin tungsten metal oxide film.  Journal of Vacuum Science and Technology B.  32:011208-011208. 2014
• Fabrication of arbitrarily shaped silicon and silicon oxide nanostructures using tip-based nanofabrication 2013
• Near-edge x-ray absorption fine structure spectroscopy study of nitrogen incorporation in chemically reduced graphene oxide.  Journal of Vacuum Science and Technology B.  31:041204-041204. 2013
• Improvement of zirconium-doped hafnium oxide high-k dielectric properties by adding molybdenum.  Journal of Vacuum Science and Technology B.  31:030605-030605. 2013
• Atomic-scale movement induced in nanoridges by scanning tunneling microscopy on epitaxial graphene grown on 4H-SiC(0001).  Journal of Vacuum Science and Technology B.  31:04d101-04D101. 2013
• Wet etching silicon nanofins with (111)-oriented sidewalls.  Journal of Vacuum Science and Technology B.  31:021801-021801. 2013
• Combined helium ion beam and nanoimprint lithography attains 4 nm half-pitch dense patterns.  Journal of Vacuum Science and Technology B.  30:06f304-06F304. 2012
• In situ near-edge x-ray absorption fine structure spectroscopy investigation of the thermal defunctionalization of graphene oxide.  Journal of Vacuum Science and Technology B.  30:061206-061206. 2012
• Template-assisted assembly of ZnO nanorods with postdeposition growth.  Journal of Vacuum Science and Technology B.  30:06ff01. 2012
• Near-edge x-ray absorption fine structure spectroscopy studies of charge redistribution at graphene/dielectric interfaces.  Journal of Vacuum Science and Technology B.  30:041205-041205. 2012
• Process effects of copper film over a step etched with a plasma-based process.  Journal of Vacuum Science and Technology B.  30:021204-021204. 2012
• Bilayer graphene by bonding CVD graphene to epitaxial graphene.  Journal of Vacuum Science and Technology B.  30:03d110-03D110. 2012
• Fabrication of top-gated epitaxial graphene nanoribbon FETs using hydrogen-silsesquioxane.  Journal of Vacuum Science and Technology B.  30:03d104-03D104. 2012
• Work function extraction of metal gates with alternate channel materials.  Journal of Vacuum Science and Technology B.  30:022202-022202. 2012
• Electrical and microstructural properties of N⁺ ion-implanted ZnO and ZnO:Ag thin films 2011
• Single-walled carbon nanotube alignment by grating-guided electrostatic self-assembly.  Journal of Vacuum Science and Technology B.  28:1318-1321. 2010
• Lateral-flow particle filtration and separation with multilayer microfluidic channels.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  27:3115-3119. 2009
• Solid-state dye-sensitized solar cell based on semiconducting nanomaterials.  Journal of Vacuum Science and Technology B.  27:3073-3077. 2009
• Sub-15 nm nanoimprint molds and pattern transfer 2009
• Si-containing block copolymers for self-assembled nanolithography.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  26:2489-2494. 2008
• Patterning chalcogenide glass by direct resist-free thermal nanoimprint 2008
• Optimal temperature for development of poly(methylmethacrylate).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  25:2013-2016. 2007
• Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth 2007
• Precise positioning of single-walled carbon nanotubes by ac dielectrophoresis.  Journal of Vacuum Science and Technology B.  24:3173-3178. 2006
• Nanofabrication module integrated with optical aligner 2006
• Investigation of the magnetic susceptibility of nanocomposites obtained in zero-field-cooled conditions 2006
• Physical and electrical properties of Ta-N, Mo-N, and W-N electrodes on HfO2 high-k gate dielectric.  Journal of Vacuum Science and Technology B.  24:349-357. 2006
• Synthesis of metallic nanocrystals with size and depth control: A case study.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  23:1470-1473. 2005
• Amorphous silicon nitride films of different composition deposited at room temperature by pulsed glow discharge plasma immersion ion implantation and deposition 2004
• Thermally actuated probe array for parallel dip-pen nanolithography.  Journal of Vacuum Science and Technology B.  22:2563-2567. 2004
• Formation of silicon nanocrystals in SiO2 by oxireduction reaction induced by impurity implantation and annealing 2004
• Incorporation of fluorine in hydrogenated silicon carbide films deposited by pulsed glow discharge 2004
• Use of the focused ion beam technique to produce a sharp spherical diamond indenter for sub-10 nm nanoindentation measurements.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  22:668-672. 2004
• Fabrication and characterization of a monolithic thin-film edge emitter device with zinc-oxide-tungsten-based thin-film phosphor.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  22:165-170. 2004
• Ultrashallow junction formation by point defect engineering 2004
• Influence of carbon content and average energy of deposited ions on mechanical and optical properties of SiCN films grown by plasma ion immersion processing 2003
• The role of trapped Ar atoms in the mechanical properties of boron carbide films deposited by dc-magnetron sputtering 2003
• Cleaning of Si and properties of the HfO2Si interface.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  21:718-722. 2003
• Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  20:2183-2186. 2002
• Fluorine and boron co-doped diamond-like carbon films deposited by pulsed glow discharge plasma immersion ion processing 2002
• Plasma immersion ion cleaning of oxidized steel surfaces using hexafluoroethane and argon plasmas 2001
• Stoichiometric and Ar-ion Sputtered Uranium Dioxide (111) Single Crystal by XPS.  Surface Science Spectra.  8:297-302. 2001
• Electrochemical characterization and surface analysis of bulk amorphous alloys in aqueous solutions at different pH.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  19:1447-1453. 2001
• Structure, stability, and mechanical properties of epitaxial W/NbN superlattices.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  19:952-957. 2001
• Synthesis of fluorinated diamond-like carbon films by the plasma immersion ion processing technique 2001
• Investigation of Si-doped diamond-like carbon films synthesized by plasma immersion ion processing 2000
• The role of oxygen in the intrinsic tensile residual stress evolution in sputter-deposited thin metal films 2000
• Structure, hardness, and tribological properties of reactive magnetron sputtered chromium nitride films 2000
• Characterization and enhanced properties of plasma immersion ion processed diamond-like carbon films 1999
• Graphite macroparticle filtering efficiency of three different magnetic filter designs used in the filtered cathodic vacuum arc deposition of tetrahedral amorphous carbon films 1999
• Mechanical properties, stress evolution and high-temperature thermal stability of nanolayered MoSiN/SiC thin films 1999
• Optical properties of diamond-like carbon synthesized by plasma immersion ion processing 1999
• Processing of diamondlike carbon using plasma immersion ion deposition 1999
• Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  16:1142-1144. 1998
• Fabrication and characterization of gated porous silicon cathode field emission arrays.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  16:777-779. 1998
• Hard boronsuboxide-based films deposited in a sputter-sourced, high-density plasma deposition system.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  15:2623-2626. 1997
• Cyclization and related reactions of iodoethanol on Ag(110).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  15:1667-1673. 1997
• Steady-state catalytic C-C bond formation on reduced TiO2 surfaces.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  15:1586-1591. 1997
• High-temperature structural stability of MoSi2-based nanolayer composites.  Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society.  13:1126-1126. 1995
• INTERCHAIN VACANCY MIGRATION OF GAAS(110).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  12:1855-1857. 1994
• KNIFE-EDGE THIN-FILM FIELD-EMISSION CATHODES ON (110) SILICON-WAFERS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:644-647. 1994
• FABRICATION OF A NANOSCALE, INPLANE GATED QUANTUM-WIRE BY LOW-ENERGY ION EXPOSURE.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:8-13. 1994
• IMPROVED MONOLITHIC VACUUM FIELD-EMISSION DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  12:666-671. 1994
• APPLICATION OF LUMINESCENCE TECHNIQUES TO PROBE SURFACE-ADSORBATE INTERACTIONS ON OXIDE SINGLE-CRYSTALS.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  11:209-218. 1993
• PHASE-STABILITY VERSUS THE LATTICE MISMATCH OF (100)CO1-XGAX THIN-FILMS ON (100)GAAS 1991
• THE IMAGE POTENTIAL IN SCANNING TUNNELING MICROSCOPY OF SEMICONDUCTOR SURFACES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  9:2399-2404. 1991
• FABRICATION OF A GATED GALLIUM-ARSENIDE HETEROSTRUCTURE RESONANT TUNNELING DIODE.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  8:393-396. 1990
• A BOLT-ON DEPOSITION SOURCE FOR ULTRAHIGH-VACUUM GROWTH OF INTERMETALLIC COMPOUND FILMS 1989
• SIMULATIONS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION AND OF CLUSTER FORMATION ON GAAS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  7:729-732. 1989
• REACTION OF AU4 AND GA(CH3)3 WITH GAAS(110).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  7:790-791. 1989
• CROSS-SECTIONAL TRANSMISSION ELECTRON-MICROSCOPY OF THE INTERFACES BETWEEN PHYSICAL VAPOR-DEPOSITED TINX COATINGS AND STEEL SUBSTRATES.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  7:2486-2490. 1989
• REACTION OF DIMERS AND DIATOMIC-MOLECULES WITH GAAS(110) - MOLECULAR-DYNAMICS COMPUTER-SIMULATIONS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics.  6:1302-1305. 1988
• FINGERPRINTING OF POLYMER SURFACES WITH CF-252 PARTICLE DESORPTION MASS-SPECTROMETRY 1988
• GROWTH AND LUMINESCENCE SPECTROSCOPY OF A CUCL QUANTUM WELL STRUCTURE 1988
• MULTIPLE INITIAL CHEMISORPTION SITES - AL ON GAAS(110).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  6:1491-1494. 1988
• THE ATOMIC STRUCTURES OF THE SI(111)-SQUARE-ROOT-3XSQUARE-ROOT-3-AU AND SI(111)-6X6-AU SURFACES STUDIED BY LOW-ENERGY ION-SCATTERING 1988
• INSB-CDTE INTERFACES - A COMBINED STUDY BY SOFT-X-RAY PHOTOEMISSION, LOW-ENERGY ELECTRON-DIFFRACTION, AND RAMAN-SPECTROSCOPY 1987
• Wear and friction measurements of ion beam induced FeTi surface alloys on AISI 304 stainless steel.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  4:2997-3001. 1986
• INTRINSIC INTERFACE STATES AND DEFECT STATES FOR SI/NISI2(111).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  4:2328-2330. 1986
• QUANTITATIVE SURFACE STRUCTURAL DETERMINATION USING IMPACT COLLISION ION-SCATTERING SPECTROSCOPY 1986
• Calibration of an energy dispersive spectroscopy k factor using Rutherford backscattering 1985
• AUGA2 ON GASB(001) - AN EPITAXIAL, THERMODYNAMICALLY STABILIZED METAL III-V-COMPOUND SEMICONDUCTOR INTERFACE 1985
• DANGLING BONDS AND SCHOTTKY BARRIERS.  Journal of Vacuum Science and Technology B.  3:1162-1166. 1985
• THEORY OF SI/NISI2 INTERFACE STATES.  Journal of Vacuum Science and Technology B.  3:1221-1223. 1985
• A technique for the production of a thin film with a linearly varying composition.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  3:1903-1906. 1985
• ROLLING-CONTACT FATIGUE BEHAVIOR OF CU AND TIN COATINGS ON BEARING STEEL SUBSTRATES.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films.  3:2348-2353. 1985
• THEORY OF SCHOTTKY-BARRIER FORMATION FOR TRANSITION-METALS ON SI,GE,DIAMOND, AND SIX GE1-X ALLOYS.  Journal of Vacuum Science and Technology B.  2:491-495. 1984
• THEORY OF SURFACE-DEFECT STATES AND SCHOTTKY-BARRIER HEIGHTS - APPLICATION TO INAS.  Journal of Vacuum Science and Technology B.  2:449-452. 1984
• CHARACTERIZATION OF THE SURFACE NET AND ELECTRONIC-STRUCTURE OF AUGA2(001) 1984
• EPITAXIAL-GROWTH OF AG FILMS ON GE(001) 1983
• Effects of an orderdisorder transition on surface deep levels in metastable (GaAs)1 x Ge2 x.  Journal of Vacuum Science and Technology B.  1:747-750. 1983
• FERMI-LEVEL PINNING AT HETEROJUNCTIONS.  Journal of Vacuum Science and Technology B.  1:401-403. 1983
• BOUND AND RESONANT SURFACE-STATES AT THE (110) SURFACES OF ALSB, ALAS, AND ALP.  Journal of Vacuum Science and Technology.  21:548-550. 1982
• CHANNELING MEASUREMENTS OF LATTICE DISORDER AT THE GAAS-INAS(100) HETEROJUNCTION 1982
• SURFACE-STRUCTURE DETERMINATION USING ION-SCATTERING SPECTROSCOPY 1982
• Surface defects and Fermilevel pinning in InP.  Journal of Vacuum Science and Technology.  20:659-661. 1982
• Effects of the environment on point-defect energy levels in semiconductors.  Journal of Vacuum Science and Technology.  19:502-507. 1981
• Unified theory of pointdefect electronic states, core excitons, and intrinsic electronic states at semiconductor surfaces.  Journal of Vacuum Science and Technology.  19:383-387. 1981
• THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES.  Journal of Vacuum Science and Technology.  17:993-996. 1980
• Ultrahigh vacuum system for ISABELLE full cell.  Journal of Vacuum Science and Technology.  17:342-344. 1980
• SIMS of transfer ribonucleic acid molecules encapsulated between free-standing graphene sheets..  Biointerphases: an open access journal for the biomaterials interface community. 02A324-02A324. 2016
• Preparation of ternary alloy libraries for high-throughput screening of material properties by means of thick film deposition and interdiffusion: Benefits and limitations.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1788-1792. 2004
• Nonlithographic approach to nanostructure fabrication using a scanned electrospinning source.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 2994-2997. 2003
• Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon.  Journal of Vacuum Science and Technology B. 992-994. 2002
• Defect engineering: An approach on ultrashallow junction in silicon.  Journal of Vacuum Science and Technology B. 419-421. 2002
• Plasma oxidation as a tool to design oxide films at low temperatures.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1965-1970. 2001
• Synthesis of diamondlike carbon films with superlow friction and wear properties.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1987-1992. 2000
• Investigation of framework and cation substitutions in Keggin-type heteropoly acids probed by scanning tunneling microscopy and tunneling spectroscopy.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1299-1304. 1997
• Ethylene oxide interaction with Pd surfaces: Experimental and theoretical results.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1469-1474. 1996
• Role of interface microstructure in rectifying metal/semiconductor contacts: Ballistic electron emission observations correlated to microstructure.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1238-1242. 1996
• Porous silicon field emission cathode development.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1899-1901. 1996
• CARRIER CAPTURE AS A MECHANISM FOR DEFECT MIGRATION AT SEMICONDUCTOR SURFACES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1144-1149. 1995
• BLUE-LIGHT EMISSION OBSERVED IN A MONOLITHIC THIN-FILM EDGE EMISSION VACUUM MICROELECTRONIC DEVICE.  Journal of vacuum science & technology. B, Microelectronics and nanometer structures : processing, measurement, and phenomena : an official journal of the American Vacuum Society. 500-504. 1995
• LATERAL VARIATION IN THE SCHOTTKY-BARRIER HEIGHT OF AU/PTSI/(100)SI DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 2634-2638. 1994
• LASER-INDUCED DESORPTION OF SMALL ALCOHOLS FROM AG(111) BY RESONANT VIBRATIONAL-EXCITATION.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2084-2089. 1993
• SITE REQUIREMENTS OF REACTIONS ON OXIDE SURFACES.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2162-2168. 1993
• MANUFACTURABLE VACUUM FIELD-EMISSION DIODES.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 505-510. 1993
• NONLINEAR-REGRESSION TECHNIQUE FOR PARAMETER EXTRACTION FROM FIELD-EMISSION DATA.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 379-382. 1993
• ENERGY SURFACE AND DYNAMICS OF SI(100).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2052-2054. 1992
• OBSERVED ION MIXING OF AU WITH GAAS(001) DURING LOW-ENERGY ION-SCATTERING.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2606-2608. 1992
• POLARIZATION OF ELECTRONIC CHARGE AND DISTORTION OF SURFACE GEOMETRY BY A SCANNING TUNNELING MICROSCOPY TIP - SI(100).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 974-977. 1992
• DIFFUSION OF SI ATOMS AND DIMERS ON SI(100).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 876-879. 1991
• DIMERIZATION AND ADSORPTION OF SI ON THE SI(100) SURFACE.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 656-658. 1991
• PLASMA DESORPTION MASS-SPECTROMETRY WITH COINCIDENCE COUNTING FOR THE ANALYSIS OF POLYMER SURFACES.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1300-1306. 1991
• SURFACE REACTIVITY OF TITANIUM ALUMINUM-ALLOYS - TI3AL, TIAL, AND TIAL3.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1610-1615. 1991
• KINETICS AND DYNAMICS ON SI(100).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 685-689. 1991
• ORDERED ARRAYS OF PROTEINS ON GRAPHITE OBSERVED BY SCANNING TUNNELING MICROSCOPY.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 1219-1222. 1991
• SUBSURFACE CHEMISORPTION OF SMALL ATOMS ON SEMICONDUCTORS - B, C, AND N ON GAAS.  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 761-763. 1991
• EFFECT OF POSTDEPOSITION ANNEALING ON STRUCTURE AND CHEMISTRY OF THE TIN FILM STEEL SUBSTRATE INTERFACES.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 439-443. 1991
• ELECTRONIC STATES OF SB, BI, AU, AND SN CLUSTERS ON GAAS(110).  Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics. 900-902. 1990
• A NEW EXPERIMENTAL-METHOD FOR DETERMINING SECONDARY ION YIELDS FROM SURFACES BOMBARDED BY COMPLEX HETEROGENEOUS IONS.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2265-2268. 1990
• REACTIVE ION ETCHING OF PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION AMORPHOUS-SILICON AND SILICON-NITRIDE - FEEDING GAS EFFECTS.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1702-1705. 1990
• SLOPE CONTROL OF MOLYBDENUM LINES ETCHED WITH REACTIVE ION ETCHING.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1529-1532. 1990
• IMPACT COLLISION ION-SCATTERING SPECTROSCOPY OF AG(110) USING LI-7+ AND HE-4+.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 808-809. 1988
• TERNARY SOLID-PHASE EQUILIBRIA IN THE SYSTEMS (AG,IN,AU)-(CD,HG)-TE.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1564-1564. 1988
• ANALYSIS OF CHEMICAL BONDING IN TIC, TIN, AND TIO USING 2ND-PRINCIPLES BAND STRUCTURES FROM PHOTOEMISSION DATA.  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 1603-1603. 1986
• ELECTRONIC-STRUCTURE INVESTIGATION OF EPITAXIAL NICKEL SILICIDES ON SI(001).  Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 269-270. 1984