LATERAL VARIATION IN THE SCHOTTKY-BARRIER HEIGHT OF AU/PTSI/(100)SI DIODES Conference Paper uri icon

abstract

  • The lateral variation in the Schottky barrier height (SBH) formed at UHV prepared Au/PtSi/(100)Si (n=4.51014) diodes was measured on length scales ranging from a few to several hundred nanometers using ballistic electron emission microscopy (BEEM). The spatial profile and the statistical distribution of the SBHs thus obtained were compared to broad area currentvoltage (IV) and capacitancevoltage (CV) characteristics of these metalsemiconductor contacts. This comparison showed that the macroscopic SBHs obtained from IV and CV measurements can be successfully interpreted using the parallel conduction model applied to the BEEM derived barrier height distribution. In addition, we found that the variations in the SBH were strongly correlated, with an autocovariance length of 20 nm at short wavelengths and with a strong peak in the spectral density at a spatial frequency of (225 nm)1.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

  • TALIN, A. A., WILLIAMS, R. S., MORGAN, B. A., RING, K. M., & KAVANAGH, K. L.

citation count

  • 25

complete list of authors

  • TALIN, AA||WILLIAMS, RS||MORGAN, BA||RING, KM||KAVANAGH, KL

publication date

  • July 1994