SUBSURFACE CHEMISORPTION OF SMALL ATOMS ON SEMICONDUCTORS - B, C, AND N ON GAAS Conference Paper

abstract

• Several years ago we predicted that small atoms like B will chemisorb at subsurface sites on IIIV semiconductors. Although this conclusion is explained by the open structures of tetrahedrally bonded materials, it was based on detailed simulations of chemisorption via HellmannFeynman molecular dynamics. Subsequently, it has been discovered that B occupies a subsurface site on Si(111). Here we report further simulations of the chemisorption of small atomsnamely, B, C, and N on GaAs(110)and conclude that subsurface chemisorption on semiconductors should be a common phenomenon.

authors

• Allen, Roland

published proceedings

• JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

• MENON, M., & ALLEN, R. E.

citation count

• 0

complete list of authors

• MENON, M||ALLEN, RE

publication date

• March 1991

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1116/1.585506

start page

• 761

end page

• 763

volume

• 9

issue

• 2

URL

• http://dx.doi.org/10.1116/1.585506