Ultrashallow junction formation by point defect engineering Academic Article uri icon

abstract

  • The technique of point defect engineering (PDE) was investigated to control boride-enhanced diffusion (BED) in ultrashallow junction formation. The approach is based on high-energy ion bombardment with silicon that can spatially separate the distribution of intersitials and vacancies, with a vacancy-rich region formed near the surface region. It was shown that implantation of high energy (MeV) Si ions into a Si substrate can suppress BED. The PDE can also increase the stability of highly doped junction, retard boron diffusion to a rate much less than normal diffusion, sharpen the dopant profile and enhance boron activation.

published proceedings

  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

author list (cited authors)

  • Shao, L., Thompson, P. E., van der Heide, P., Patel, S., Chen, Q. Y., Wang, X., ... Chu, W.

citation count

  • 2

complete list of authors

  • Shao, Lin||Thompson, Phillip E||van der Heide, PAW||Patel, Sanjay||Chen, Quak Y||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Chu, Wei-Kan

publication date

  • January 2004