Ultrashallow junction formation by point defect engineering Academic Article uri icon

abstract

  • We demonstrated that formation of sub-10 nm junctions can be realized by the technique of point defect engineering (PDE). The approach was based on the fact that high-energy ion bombardment with silicon can spatially separate the distribution of interstitials and vacancies, with a vacancy-rich region formed near the surface region. Effects of PDE on the boride-enhanced diffusion (BED) were systematically investigated by using boron superlattices grown by molecular-beam epitaxy. We observed that a high-energy implant provides an effective method to suppress BED. Furthermore, PDE can also (1) increase the stability of highly doped junction, (2) retard boron diffusion to a rate much less than normal diffusion, (3) sharpen the dopant profile, and (4) enhance boron activation.

published proceedings

  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

author list (cited authors)

  • Shao, L., Thompson, P. E., van der Heide, P., Patel, S., Chen, Q. Y., Wang, X., ... Chu, W.

citation count

  • 2

complete list of authors

  • Shao, Lin||Thompson, Phillip E||van der Heide, PAW||Patel, Sanjay||Chen, Quak Y||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Chu, Wei-Kan

publication date

  • January 2004