Ultrashallow junction formation by point defect engineering
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The technique of point defect engineering (PDE) was investigated to control boride-enhanced diffusion (BED) in ultrashallow junction formation. The approach is based on high-energy ion bombardment with silicon that can spatially separate the distribution of intersitials and vacancies, with a vacancy-rich region formed near the surface region. It was shown that implantation of high energy (MeV) Si ions into a Si substrate can suppress BED. The PDE can also increase the stability of highly doped junction, retard boron diffusion to a rate much less than normal diffusion, sharpen the dopant profile and enhance boron activation.
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
author list (cited authors)
Shao, L., Thompson, P. E., van der Heide, P., Patel, S., Chen, Q. Y., Wang, X., ... Chu, W.
complete list of authors
Shao, Lin||Thompson, Phillip E||van der Heide, PAW||Patel, Sanjay||Chen, Quak Y||Wang, Xuemei||Chen, Hui||Liu, Jiarui||Chu, Wei-Kan