INTRINSIC INTERFACE STATES AND DEFECT STATES FOR SI/NISI2(111) Academic Article

abstract

• The intrinsic interface states and the states associated with interfacial vacancies have been calculated for the type A Si/NiSi2(111) interface. A prominent band of intrinsic interface states is predicted near and below the Si valence band maximum, Ev, dispersing downward from an energy in the Si band gap to an energy about 1 eV below Ev. This band should be observable in photoemission experiments. Our calculation for the interfacial Si vacancy on the NiSi2 side of the interface yields a level, a few tenths of an electron volt above the valence band edge, that can explain observed Schottky barriers at Si/NiSi2(111) interfaces.

authors

• Allen, Roland

published proceedings

• JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS

author list (cited authors)

• LIM, H., & ALLEN, R. E.

citation count

• 3

complete list of authors

• LIM, H||ALLEN, RE

publication date

• September 1986

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1116/1.574071

start page

• 2328

end page

• 2330

volume

• 4

issue

• 5

URL

• http://dx.doi.org/10.1116/1.574071