Fermi-level pinning at heterojunctions
- Additional Document Info
- View All
Authors extend their calculations for defect levels at semiconductor free surfaces to ideal semiconductor heterojunctions. They find that the Fermi-energy pinning observed for deposition of Ge and Si (as well as metals and oxygen) on GaAs(110) surfaces is explained by free-surface antisite defect levels, but cannot be explained, even qualitatively, by antisite defect levels for bulk GaAs or for ideal GaAs/Ge or GaAs/Si interfaces. They conclude that when pinning occurs at heterojunctions and at other semiconductor/overlayer interfaces, the pinning defects are somehow 'sheltered' by irregularities in the atomic configurations at the interface.
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
author list (cited authors)
complete list of authors