DIFFUSION OF SI ATOMS AND DIMERS ON SI(100) Conference Paper uri icon

abstract

  • Activation energies for diffusion of Si adatoms and dimers on a Si(100) surface are estimated through computer simulations. The potential field is probed by forcing an adatom to move adiabatically, while the surrounding atoms relax. The StillingerWeber potential is used. It is found that (1) the diffusion barrier height for an isolated adatom is smaller than that for a dimer; (2) the activation energies are comparable for the two atoms in a dimer to hop together or to separate from each other; (3) the activation energies of an isolated dimer, a dimer sitting next to a dimer chain, and a dimer at the end of a dimer chain are almost identical, despite differences in the binding energies.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS

author list (cited authors)

  • HUANG, Z. H., & ALLEN, R. E.

citation count

  • 17

complete list of authors

  • HUANG, ZH||ALLEN, RE

publication date

  • May 1991