Improved a-B10C2+xHy/Si p-n heterojunction performance after neutron irradiation Academic Article

abstract

• The impact of neutron irradiation, in the energy range of 0.025eV, on amorphous semiconducting partially dehydrogenated boron carbide (a-B10C2+xHy) on silicon p-n heterojunction diodes was investigated. The heterojunction devices were created by synthesizing a-B10C2+xHy via plasma enhanced chemical vapor deposition on n-type silicon. Unlike many electronic devices, the performance of the a-B10C2+xHy heterojunction diode improved with neutron irradiation, in spite of the large neutron cross section of 10B. There is also increased charge carrier lifetime of more than 200% with modest neutron irradiation of approximately 2.7108 to 1.08109 neutrons/cm2.

authors

• Nastasi, Michael

published proceedings

• Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

altmetric score

• 1

author list (cited authors)

• Peterson, G. G., Su, Q., Wang, Y., Ianno, N. J., Dowben, P. A., & Nastasi, M.

citation count

• 9

publication date

• January 2018

publisher

• American Vacuum Society  Publisher

keywords

• 40 Engineering
• 51 Physical Sciences
• 5106 Nuclear And Plasma Physics
• 5110 Synchrotrons And Accelerators

Digital Object Identifier (DOI)

• 10.1116/1.5008999

start page

• 011207

volume

• 36

issue

• 1

URL

• http://dx.doi.org/10.1116/1.5008999