Fabrication and characterization of gated porous silicon cathode field emission arrays Academic Article uri icon


  • Gated porous silicon cathode field emission arrays have been fabricated. The devices were fabricated by using a simple self-aligning gate process which results in reproducible physical characteristics across the entire array. In addition, an anodization process has been developed to form porous silicon in a localized region on the substrate. The resulting device structure consists of a conical porous silicon tip that is self-aligned with respect to a concentric metal gate electrode. Small arrays exhibited Fowler-Nordheim characteristics over several decades of anode current. The porous silicon tip has been shown to produce a large submicroscopic field enhancement which leads to an improvement in emission characteristics. 1998 American Vacuum Society.

published proceedings


author list (cited authors)

  • Jessing, J. R., Kim, H. R., Parker, D. L., & Weichold, M. H.

citation count

  • 5

complete list of authors

  • Jessing, JR||Kim, HR||Parker, DL||Weichold, MH

publication date

  • January 1998