Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics Journal

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Lateral-flow particle filtration and separation with multilayer microfluidic channels. 27:3115-3119. 2009
Si-containing block copolymers for self-assembled nanolithography. 26:2489-2494. 2008
Optimal temperature for development of poly(methylmethacrylate). 25:2013-2016. 2007
Synthesis of metallic nanocrystals with size and depth control: A case study. 23:1470-1473. 2005
Use of the focused ion beam technique to produce a sharp spherical diamond indenter for sub-10 nm nanoindentation measurements. 22:668-672. 2004
Fabrication and characterization of a monolithic thin-film edge emitter device with zinc-oxide-tungsten-based thin-film phosphor. 22:165-170. 2004
Comparison of atomic force microscopy imaging methods and roughness determinations for a highly polished quartz surface. 20:2183-2186. 2002
Cluster ion Implantation: A New Approach to Ultra-Shallow Junction in Silicon. 20. 2002
Defect Engineering: A New Approach on Ultra-Shallow Junction in Silicon. 20. 2002
Size distribution of SiGeC quantum dots grown on Si(311) and Si(001) surfaces. 16:1142-1144. 1998
Fabrication and characterization of gated porous silicon cathode field emission arrays. 16:777-779. 1998
PAPERS FROM THE 22ND ANNUAL CONFERENCE ON THE PHYSICS AND CHEMISTRY OF SEMICONDUCTOR INTERFACES - 8-12 JANUARY 1995, HOLIDAY INN AND CONFERENCE CENTER, OLD-TOWN, SCOTTSDALE, ARIZONA - PREFACE. 13:1565-1565. 1995
Initial operation of a largescale plasma source ion implantation experiment. 12:870-874. 1994
KNIFE-EDGE THIN-FILM FIELD-EMISSION CATHODES ON (110) SILICON-WAFERS. 12:644-647. 1994
FABRICATION OF A NANOSCALE, INPLANE GATED QUANTUM-WIRE BY LOW-ENERGY ION EXPOSURE. 12:8-13. 1994
IMPROVED MONOLITHIC VACUUM FIELD-EMISSION DIODES. 12:666-671. 1994
THE IMAGE POTENTIAL IN SCANNING TUNNELING MICROSCOPY OF SEMICONDUCTOR SURFACES. 9:2399-2404. 1991
FABRICATION OF A GATED GALLIUM-ARSENIDE HETEROSTRUCTURE RESONANT TUNNELING DIODE. 8:393-396. 1990
SIMULATIONS OF METALORGANIC CHEMICAL VAPOR-DEPOSITION AND OF CLUSTER FORMATION ON GAAS. 7:729-732. 1989
REACTION OF DIMERS AND DIATOMIC-MOLECULES WITH GAAS(110) - MOLECULAR-DYNAMICS COMPUTER-SIMULATIONS. 6:1302-1305. 1988
Nonlithographic approach to nanostructure fabrication using a scanned electrospinning source 2003
Role of interface microstructure in rectifying metal/semiconductor contacts: Ballistic electron emission observations correlated to microstructure 1996
Porous silicon field emission cathode development 1996
CARRIER CAPTURE AS A MECHANISM FOR DEFECT MIGRATION AT SEMICONDUCTOR SURFACES 1995
LATERAL VARIATION IN THE SCHOTTKY-BARRIER HEIGHT OF AU/PTSI/(100)SI DIODES 1994
MANUFACTURABLE VACUUM FIELD-EMISSION DIODES 1993
NONLINEAR-REGRESSION TECHNIQUE FOR PARAMETER EXTRACTION FROM FIELD-EMISSION DATA 1993
KINETICS AND DYNAMICS ON SI(100) 1991
ORDERED ARRAYS OF PROTEINS ON GRAPHITE OBSERVED BY SCANNING TUNNELING MICROSCOPY 1991
SUBSURFACE CHEMISORPTION OF SMALL ATOMS ON SEMICONDUCTORS - B, C, AND N ON GAAS 1991
ELECTRONIC STATES OF SB, BI, AU, AND SN CLUSTERS ON GAAS(110) 1990