Porous silicon field emission cathode development
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This article will address the development of a porous silicon cathode technology which shows promise in solving the existing problems, specifically unstable, low current density, nonreproducible and high voltage emission, encountered by other cathode technologies. Monolithic two- and three-terminal devices have been designed, manufactured, and characterized. All of these devices have resulted in stable, reproducible operating characteristics that follow the Fowler-Nordheim model. Vacuum transport of the electrons and temperature independence (to 250 C) of the current-voltage characteristics have been confirmed. Appreciable emission current has been observed with macroscopic fields on the order of 104V/cm, thus indicating a large submicroscopic field enhancement due to the geometrical nature of the porous silicon. 1996 American Vacuum Society.
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
author list (cited authors)
Jessing, J. R., Parker, D. L., & Weichold, M. H.
complete list of authors
Jessing, JR||Parker, DL||Weichold, MH