Porous silicon field emission cathode development Conference Paper uri icon

abstract

  • This article will address the development of a porous silicon cathode technology which shows promise in solving the existing problems, specifically unstable, low current density, nonreproducible and high voltage emission, encountered by other cathode technologies. Monolithic two- and three-terminal devices have been designed, manufactured, and characterized. All of these devices have resulted in stable, reproducible operating characteristics that follow the Fowler-Nordheim model. Vacuum transport of the electrons and temperature independence (to 250 C) of the current-voltage characteristics have been confirmed. Appreciable emission current has been observed with macroscopic fields on the order of 104V/cm, thus indicating a large submicroscopic field enhancement due to the geometrical nature of the porous silicon. 1996 American Vacuum Society.

published proceedings

  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

author list (cited authors)

  • Jessing, J. R.

citation count

  • 13

complete list of authors

  • Jessing, JR

publication date

  • May 1996