Porous silicon field emission cathode development Conference Paper

abstract

• This article will address the development of a porous silicon cathode technology which shows promise in solving the existing problems, specifically unstable, low current density, nonreproducible and high voltage emission, encountered by other cathode technologies. Monolithic two- and three-terminal devices have been designed, manufactured, and characterized. All of these devices have resulted in stable, reproducible operating characteristics that follow the Fowler-Nordheim model. Vacuum transport of the electrons and temperature independence (to 250 C) of the current-voltage characteristics have been confirmed. Appreciable emission current has been observed with macroscopic fields on the order of 104V/cm, thus indicating a large submicroscopic field enhancement due to the geometrical nature of the porous silicon. 1996 American Vacuum Society.

authors

• Weichold, Mark

published proceedings

• JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

• Jessing, J. R., Parker, D. L., & Weichold, M. H.

citation count

• 13

complete list of authors

• Jessing, JR||Parker, DL||Weichold, MH

publication date

• January 1996

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics  Journal

Digital Object Identifier (DOI)

• 10.1116/1.588950

start page

• 1899

end page

• 1901

volume

• 14

issue

• 3

URL

• http://dx.doi.org/10.1116/1.588950