Effects of the environment on point‐defect energy levels in semiconductors
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Deep impurity energy levels within the band gap of a semiconductor may be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.
author list (cited authors)
Dow, J. D., Allen, R. E., Sankey, O. F., Buisson, J. P., & Hjalmarson, H. P.