Effects of the environment on point-defect energy levels in semiconductors Academic Article uri icon


  • Deep impurity energy levels within the band gap of a semiconductor can be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.

published proceedings

  • Journal of Vacuum Science and Technology

author list (cited authors)

  • Dow, J. D., Allen, R. E., Sankey, O. F., Buisson, J. P., & Hjalmarson, H. P.

citation count

  • 17

complete list of authors

  • Dow, JD||Allen, RE||Sankey, OF||Buisson, JP||Hjalmarson, HP

publication date

  • September 1981