Effects of the environment on point‐defect energy levels in semiconductors Academic Article uri icon

abstract

  • Deep impurity energy levels within the band gap of a semiconductor may be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.

author list (cited authors)

  • Dow, J. D., Allen, R. E., Sankey, O. F., Buisson, J. P., & Hjalmarson, H. P.

citation count

  • 16

publication date

  • September 1981