Effects of the environment on point-defect energy levels in semiconductors Academic Article

abstract

• Deep impurity energy levels within the band gap of a semiconductor can be altered and manipulated by changing the environment of the impurity. The effects of a second impurity, an interface, and a surface have been evaluated for substitutional deep levels in a variety of semiconductor hosts.

authors

• Allen, Roland

published proceedings

• Journal of Vacuum Science and Technology

author list (cited authors)

• Dow, J. D., Allen, R. E., Sankey, O. F., Buisson, J. P., & Hjalmarson, H. P.

citation count

• 17

complete list of authors

• Dow, JD||Allen, RE||Sankey, OF||Buisson, JP||Hjalmarson, HP

publication date

• September 1981

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1116/1.571047

start page

• 502

end page

• 507

volume

• 19

issue

• 3

URL

• http://dx.doi.org/10.1116/1.571047