Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon Conference Paper uri icon


  • The formation of ultrashallow junctions of silicon by the cluster-ion implantation technique was demonstrated. The use of heavy atom-boron cluster ions effectively reduced the boron energy required for shallow-junction formation. SiB, SiB2 and GeB cluster ions were generated by a cesium sputtering ion source and produced the 2keV boron required for the low-energy ion implantation. Shallow junctions with energies of 6.88, 8.82 and 15 keV were obtained. The effects of a 550 C preannealing before a 1000C rapid thermal annealing procedure was also discussed.

published proceedings

  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

author list (cited authors)

  • Lu, X., Shao, L., Wang, X., Liu, J., Chu, W., Bennett, J., Larson, L., & Ling, P.

citation count

  • 20

complete list of authors

  • Lu, Xinming||Shao, Lin||Wang, Xuemei||Liu, Jiarui||Chu, Wei-Kan||Bennett, Joe||Larson, Larry||Ling, Peiching

publication date

  • May 2002