Cluster-ion implantation: An approach to fabricate ultrashallow junctions in silicon Conference Paper uri icon

abstract

  • Cluster-ion implantation in combination with two-step annealing is effective in making ultrashallow junctions. We have demonstrated the use of heavy atomboron cluster ions to effectively reduce the boron energy for shallow-junction formation. SiB, SiB2, and GeB cluster ions have been used to produce 2 keV boron for low-energy ion implantation. We have generated the SiB, SiB2, and GeB cluster ions using the source of negative ions by cesium sputtering ion source. Shallow junctions have been made by SiB, SiB2, and GeB cluster ions implanted into Si substrates at 11015/cm2 with energies at 6.88, 8.82, and 15 keV, respectively. We also discussed the benefit of a 550C preannealing before a 1000C, 10 s rapid thermal annealing.

published proceedings

  • Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

author list (cited authors)

  • Lu, X., Shao, L., Wang, X., Liu, J., Chu, W., Bennett, J., Larson, L., & Ling, P.

citation count

  • 21

complete list of authors

  • Lu, Xinming||Shao, Lin||Wang, Xuemei||Liu, Jiarui||Chu, Wei-Kan||Bennett, Joe||Larson, Larry||Ling, Peiching

publication date

  • May 2002