Instability of junctions formed by low energy B implant and low temperature solid phase epitaxy growth Academic Article

abstract

• The stability of p+ n junctions remains a critical issue for device performance. Shallow junctions formed by low temperature solid phase epitaxy growth (LTSPEG) are not stable during additional thermal processes. Anomalous boron diffusion and boron trapping by end-of-range defects are observed during additional furnace annealing. The study shows that, by adding a (MeV) implantation step before LTSPEG, B trapping and B diffusion are significantly reduced during post-LTSPEG annealing. The technique can be used as a method to increase the stability of shallow junctions formed by LTSPEG. 2007 American Vacuum Society.

authors

• Shao, Lin

published proceedings

• JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

• Zhu, L., Martin, M., Hollander, M., Wang, Y. Q., Chen, Q., Ma, K., ... Shao, L.

citation count

• 0

complete list of authors

• Zhu, Lei||Martin, M||Hollander, M||Wang, YQ||Chen, Q||Ma, K||Yu, XK||Liu, JR||Chu, Wei-Kan||Shao, Lin

publication date

• August 2007

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology Part B: Nanotechnology and Microelectronics  Journal

keywords

• 40 Engineering
• 4016 Materials Engineering
• 51 Physical Sciences

Digital Object Identifier (DOI)

• 10.1116/1.2749529

start page

• 1276

end page

• 1279

volume

• 25

issue

• 4

URL

• http%3A%2F%2Fdx.doi.org%2F10.1116%2F1.2749529