INTERCHAIN VACANCY MIGRATION OF GAAS(110) Academic Article uri icon

abstract

  • At the (110) surface of a IIIV semiconductor, the atoms are arranged in zigzag chains. If a surface vacancy is to move to a nearest-neighbor sublattice site, it must migrate within these chains. The scanning-tunneling-microscopy observations reported here, however, demonstrate that As vacancies on GaAs(110) prefer to move between zigzag chains. This phenomenon can be understood in terms of simple bond-breaking and rebonding arguments, and from barrier heights calculated using constrained molecular dynamics.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS

author list (cited authors)

  • LENGEL, G., WEIMER, M., GRYKO, J., & ALLEN, R. E.

citation count

  • 9

complete list of authors

  • LENGEL, G||WEIMER, M||GRYKO, J||ALLEN, RE

publication date

  • July 1994