PHASE-STABILITY VERSUS THE LATTICE MISMATCH OF (100)CO1-XGAX THIN-FILMS ON (100)GAAS Academic Article uri icon

abstract

  • Thin films of the intermetallic compound Co1xGax, which has a broad homogeneity range and a continuously variable lattice constant, were grown on the (100)GaAs surface by molecular beam epitaxy. The stoichiometry of the films and the cleanliness of the substrates were determined insitu by Auger electron spectroscopy. The identity and orientation of the phases present in the films were determined exsitu by x-ray diffraction (XRD). The films were annealed to various temperatures in N2 and reexamined by XRD to detect any chemical interactions between the Co1xGax and GaAs. Films of Co1xGax deposited with a 2% lattice mismatch (x=0.5) reacted with the substrate to produce CoGa3 at 600C, whereas films with no detectable mismatch (x=0.61) did not react until they had been heated to 800C.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

author list (cited authors)

  • BAUGH, D. A., TALIN, A. A., WILLIAMS, R. S., KUO, T. C., & WANG, K. L.

citation count

  • 16

publication date

  • July 1991