Effects of an orderdisorder transition on surface deep levels in metastable (GaAs)1 x Ge2 x Academic Article

abstract

• The major chemical trends in the energy levels of deep point defects at the (100) surfaces of (GaAs)1xGe2x alloys are elucidated. These levels are predicted to exhibit bifurcation as functions of alloy composition x (at xc 0.3) because of an orderdisorder phase transition from a zincblende phase for x>xc to a diamond phase for x

authors

• Allen, Roland

published proceedings

• Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena

author list (cited authors)

• Bowen, M. A., Redfield, A. C., Froelich, D. V., Newman, K. E., Allen, R. E., & Dow, J. D.

citation count

• 2

complete list of authors

• Bowen, Marshall A||Redfield, Andrew C||Froelich, David V||Newman, Kathie E||Allen, Roland E||Dow, John D

publication date

• July 1983

publisher

• American Vacuum Society  Publisher

published in

• Journal of Vacuum Science and Technology B  Journal

keywords

• 51 Physical Sciences
• 5104 Condensed Matter Physics

Digital Object Identifier (DOI)

• 10.1116/1.582685

start page

• 747

end page

• 750

volume

• 1

issue

• 3

URL

• http://dx.doi.org/10.1116/1.582685