Effects of an order–disorder transition on surface deep levels in metastable (GaAs)1−x Ge2x
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The major chemical trends in the energy levels of deep point defects at the (100) surfaces of (GaAs)//1// minus //x Ge//2//x alloys are elucidated. These levels are predicted to exhibit bifurcation as functions of alloy composition x (at x//c approximately equals 0. 3) because of an order-disorder phase transition from a zincblende phase for x less than x//c to a diamond phase for x greater than x//c. Levels associated with distinct anion and cation sites of the zincblende structure coalesce into a single level of the diamond structure.
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