Surface defects and Fermi‐level pinning in InP
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Deep levels are predicted for native substitutional defects at the (110) surface of InP, and the Schottky barrier height data are interpreted as follows: (i) The pinning levels 0. 4 to 0. 5 ev below the conduction band edge for n-InP and 0. 75 to 0. 8 ev above the valence band edge for p-InP are assigned to an antisite defect. (ii) The pinning level that lies within 0. 1 ev of the conduction band edge is assigned to a shallow donor level of a P vacancy.
author list (cited authors)
Dow, J. D., & Allen, R. E.