Theory of deep substitutional sp3bonded impurity levels and core excitons at semiconductor interfaces Academic Article uri icon

abstract

  • A theory of the major chemical trends in the binding energies of deep substitutional sp**3-bonded impurity levels and Frenkel core excitons at interfaces is presented and applied to a GaAs/AlAs (110) interface.

published proceedings

  • Journal of Vacuum Science and Technology

author list (cited authors)

  • Hjalmarson, H. P., Allen, R. E., Bttner, H., & Dow, J. D.

citation count

  • 27

complete list of authors

  • Hjalmarson, HP||Allen, RE||B├╝ttner, H||Dow, JD

publication date

  • September 1980