Theory of deep substitutional s p 3 ‐bonded impurity levels and core excitons at semiconductor interfaces Academic Article uri icon

abstract

  • A theory of the major chemical trends in the binding energies of deep substitutional sp**3-bonded impurity levels and Frenkel core excitons at interfaces is presented and applied to a GaAs/AlAs (110) interface.

author list (cited authors)

  • Hjalmarson, H. P., Allen, R. E., Büttner, H., & Dow, J. D.

citation count

  • 27

publication date

  • September 1980