Theory of deep substitutional s p 3 ‐bonded impurity levels and core excitons at semiconductor interfaces
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A theory of the major chemical trends in the binding energies of deep substitutional sp**3-bonded impurity levels and Frenkel core excitons at interfaces is presented and applied to a GaAs/AlAs (110) interface.
author list (cited authors)
Hjalmarson, H. P., Allen, R. E., Büttner, H., & Dow, J. D.