THEORY OF DEEP SUBSTITUTIONAL SP3-BONDED IMPURITY LEVELS AND CORE EXCITONS AT SEMICONDUCTOR INTERFACES Academic Article uri icon

abstract

  • A theory of the major chemical trends in the binding energies of deep substitutional sp3-bonded impurity levels and Frenkel core excitons at interfaces is presented and applied to a GaAs/AlAs (110) interface.

published proceedings

  • JOURNAL OF VACUUM SCIENCE & TECHNOLOGY

author list (cited authors)

  • HJALMARSON, H. P., ALLEN, R. E., BUTTNER, H., & DOW, J. D.

citation count

  • 27

complete list of authors

  • HJALMARSON, HP||ALLEN, RE||BUTTNER, H||DOW, JD

publication date

  • September 1980