Reaction of Au4 and Ga(CH3)3 with GaAs(110)
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Simulations have been performed for Au4 clusters and Ga(CH3) 3 molecules on the (110) surface of GaAs. Au clusters are found to disrupt the surface geometry, even though no intermixing is observed in these simulations for short times at low temperature. Ga (CH3)3 only weakly perturbs the surface, and is observed to adsorb in various symmetric configurations during the first picosecond. 1989, American Vacuum Society. All rights reserved.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
author list (cited authors)
Menon, M., & Allen, R. E.
complete list of authors
Menon, Madhu||Allen, Roland E