Optimization of electrical characteristics of gadolinium (Gd2O3) incorporated HfO2 GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer
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Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
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Park, S. I., Ok, I., Kim, H., Zhu, F., Zhang, M., Yum, J. H., Han, Z., & Lee, J. C.
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Park, Sung Il||Ok, Injo||Kim, Hyoung-Sub||Zhu, Feng||Zhang, Manhong||Yum, Jung Hwan||Han, Zhao||Lee, Jack C
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http://dx.doi.org/10.1116/1.2890708