Optimization of electrical characteristics of gadolinium (Gd[sub 2]O[sub 3]) incorporated HfO[sub 2] GaAs n-type metal-oxide semiconductor capacitors with silicon-interface-passivation layer Academic Article uri icon

published proceedings

  • Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures

author list (cited authors)

  • Park, S. I., Ok, I., Kim, H., Zhu, F., Zhang, M., Yum, J. H., Han, Z., & Lee, J. C.

publication date

  • January 1, 2008 11:11 AM