Cleaning of Si and properties of the HfO2Si interface
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The effect of cleaning method on the properties of HfO2 dielectric and its interface with silicon was studied. Sharper LEED images and longer inhibition of initial oxide regrowth under ambient air were observed on MS-cleaned samples, as compared to RCA cleaned samples. Higher capacitance values obtained on MS-cleaned samples were attributed to lower interfacial oxide thickness. Results demonstrate the importance of surface flatness and complete hydrogen termination in the evaluation of high-k dielectrics.
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
author list (cited authors)
Choi, K., Harris, H., Gangopadhyay, S., & Temkin, H.
complete list of authors
Choi, K||Harris, H||Gangopadhyay, S||Temkin, H