Anomalous high rate reactive ion etching process for indium tin oxide

abstract

• An anomalous high indium tin oxide etch rate, i.e., 1630 /min, reactive ion etching condition has been obtained. This process is based on the combination of high temperature, i.e., 250 C, and a mixture of HCl and CH4 gases. Throughout the whole range of the gas composition, the highest etch rate is obtainable in a small CH4 concentration range, e.g., around 40%. The same phenomenon has been observed at different plasma powers. The influence of temperature or power to the etch rate is not obvious unless a threshold temperature or a threshold power is surpassed. The pure HCl plasma etched surface is in liquid form and has a rough topography after solidification. The HCl/40% CH4 etched surface is solid and has a smooth topography. A high etch rate is contributed by near-stoichiometric surface reactions as well as strong ion bombardment.

authors

• Kuo, Yue

published proceedings

• JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS

author list (cited authors)

• Kuo, Y.

citation count

• 8

complete list of authors

• Kuo, Y

publication date

• May 1997

publisher

• IOP Publishing  Publisher

keywords

• Ch4
• Etch Rate
• Hcl
• High Temperature Plasma Etching
• Indium Tin Oxide
• Plasma
• Reactive Ion Etching

Digital Object Identifier (DOI)

• 10.1143/JJAP.36.L629

start page

• L629

end page

• L631

volume

• 36

issue

• 5B

URL

• http://dx.doi.org/10.1143/jjap.36.l629