Emission spectra study of plasma enhanced chemical vapor deposition of intrinsic, n +, and p + amorphous silicon thin films Conference Paper

abstract

• ABSTRACTThe PECVD intrinsic, n+, and p+ a-Si:H thin film deposition processes have been studied by the optical emission spectroscope to monitor the plasma phase chemistry. Process parameters, such as the plasma power, pressure, and gas flow rate, were correlated to SiH*, H*, and H* optical intensities. For all films, the deposition rate increases with the increase of the SiH* intensity. For the doped films, the H*/SiH* ratio is a critical factor affecting the resistivity. The existence of PH3 or B2H6 in the feed stream enhances the deposition rate. Changes of the free radicals intensities can be used to explain variation of film characteristics under different deposition conditions.

authors

• Kuo, Yue

published proceedings

• MRS Advances

author list (cited authors)

• Lee, I., & Kuo, Y.

citation count

• 0

complete list of authors

• Lee, I-Syuan||Kuo, Yue

publication date

• December 2013

publisher

• Springer Nature  Publisher

published in

• MRS Advances  Journal

keywords

• 34 Chemical Sciences
• 3406 Physical Chemistry
• 40 Engineering

Digital Object Identifier (DOI)

• 10.1557/opl.2013.919

International Standard Book Number (ISBN) 13

• 9781605115139

start page

• 133

end page

• 138

volume

• 1536

URL

• http%3A%2F%2Fdx.doi.org%2F10.1557%2Fopl.2013.919