Electroluminescence from Metal Oxide Thin Films Academic Article

abstract

• Light emission from the amorphous Zr-doped HfO2 high-k dielectric deposited by the sputtering method has been studied. The broad band light including visible and near IR wavelengths was emitted from tiny conductive paths formed after the dielectric breakdown. Light is generated from thermal excitation not the electron-hole or excitons recombination occurred in conventional LEDs. The power density in the conductive path determined the electroluminescence characteristics, e.g., intensity and peak location. This long-life, single-chip, white-light emission device is easily fabricated with the IC compatible process and applicable to many products. 2013 The Electrochemical Society.

authors

• Kuo, Yue

published proceedings

• ECS SOLID STATE LETTERS

author list (cited authors)

• Kuo, Y., & Lin, C.

citation count

• 20

complete list of authors

• Kuo, Yue||Lin, Chi-Chou

publication date

• May 2013

publisher

• The Electrochemical Society  Publisher

published in

• ECS Solid State Letters  Journal

Digital Object Identifier (DOI)

• 10.1149/2.002308ssl

start page

• Q59

end page

• Q61

volume

• 2

issue

• 8

URL

• http%3A%2F%2Fdx.doi.org%2F10.1149%2F2.002308ssl