Light emission from the amorphous Zr-doped HfO2 high-k dielectric deposited by the sputtering method has been studied. The broad band light including visible and near IR wavelengths was emitted from tiny conductive paths formed after the dielectric breakdown. Light is generated from thermal excitation not the electron-hole or excitons recombination occurred in conventional LEDs. The power density in the conductive path determined the electroluminescence characteristics, e.g., intensity and peak location. This long-life, single-chip, white-light emission device is easily fabricated with the IC compatible process and applicable to many products. 2013 The Electrochemical Society.
