Effect of n(+) Layer Deposition Power on Light Sensing of pin Amorphous Silicon Diodes
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The effect of the plasma-enhanced chemical vapor deposition power of the phosphorus-doped n+ layer on the performance of the hydrogenated amorphous silicon pin diode for the light sensing, i.e., under solar, red, green, and blue light exposures, has been investigated. With all other deposition parameters fixed, the plasma power influenced the n+ film deposition rate, resistivity, and defects, which are critical to the light sensing characteristics. The optimized n+ layer deposition power for the light sensing, i.e., based on the external quantum efficiency, has been identified and discussed.
