Effect of n + Layer Deposition Power on Light Sensing of Amorphous Silicon pin Diodes Conference Paper uri icon

abstract

  • The effect of the plasma-enhanced chemical vapor deposition power of the phosphorus-doped n + layer on the performance of the hydrogenated amorphous silicon pin diode for the light sensing, i.e., under solar, red, green, and blue light exposures, has been investigated. With all other deposition parameters fixed, the plasma power influenced the n + film deposition rate, resistivity, and defects, which are critical to the light sensing characteristics. The optimized n + layer deposition power for the light sensing, i.e., based on the external quantum efficiency, has been identified and discussed.

published proceedings

  • ECS Transactions

author list (cited authors)

  • Henry, K., & Kuo, Y.

citation count

  • 0

complete list of authors

  • Henry, Kai||Kuo, Yue

publication date

  • July 2016