Reactive ion etching technology in thin-film-transistor processing Academic Article uri icon

abstract

  • This paper discusses reactive ion etching (RIE) process issues in preparing thin-film transistors (TFTs) for liquid crystal displays (LCDs). Three areas were examined in detail: gate metal etch, dielectric etch, and a-Si:H etch, both intrinsic and n+doped. Although there are different requirements for each step, the basic principles for the etching process are similar. For example, each process includes three major mechanisms: plasma-phase chemistry, particle transport phenomena, and surface reactions. All data on the etching results were interpreted according to these principles. Finally, a TFT characteristic curve based on RIE of some of the most critical process steps is presented.

altmetric score

  • 3

author list (cited authors)

  • Kuo, Y.

citation count

  • 7

publication date

  • January 1992

publisher

  • IBM  Publisher