Mechanism of Charge Storage in nc-RuO Embedded ZrHfO High-k Films
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The charge trapping characteristics of the MOS capacitor composed of the nanocrystalline ruthenium oxide embedded Zrdoped HfO2 gate dielectric on the p-type silicon wafer has been studied. The memory function is contributed by hole trapping during the forward sweep as well as electron trapping during the backward sweep when the starting voltage is high. The trapped holes could not be totally eliminated unless a large positive voltage is applied in the backward sweep process. Holes are strongly trapped at the nanocrystal site and loosely trapped at its interface with the high-k material while most electrons are trapped at the nanocrystal site. © The Electrochemical Society.
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