Electron beam induced damage in N-rich SiNx films deposited by plasma enhanced chemical vapour deposition Conference Paper

abstract

• The electron-beam induced damage in N-rich SiNx:H films, deposited on Si by plasma enhanced chemical vapour deposition, is studied using cross-section transmission electron microscopy. It is demonstrated that these films are unstable under electron beam irradiation, during conventional transmission electron microscopy observations (120 keV), which causes strong outdiffusion of Si from the substrate into the N-rich layer. This phenomenon leads in a number of changes which include the evolution of voids at the SiN/Si interface and the development of morphology in the previously featureless (as-grown) films. Finally, plane-view electron diffraction patterns identify the presence of unreacted Si embedded in the matrix of the amorphous SiNx. 1997 Elsevier Science S.A.

authors

• Kuo, Yue

published proceedings

• THIN SOLID FILMS

author list (cited authors)

• Lioutas, C. B., Vouroutzis, N., Paloura, E. C., & Kuo, Y.

citation count

• 1

complete list of authors

• Lioutas, CB||Vouroutzis, N||Paloura, EC||Kuo, Y

publication date

• March 1997

publisher

• Elsevier  Publisher

published in

• THIN SOLID FILMS  Journal

keywords

• Electron Diffraction
• Plasma Enhanced Cvd
• Transmission Electron Microscopy

Digital Object Identifier (DOI)

• 10.1016/S0040-6090(96)09357-1

start page

• 28

end page

• 31

volume

• 296

issue

• 1-2

URL

• http://dx.doi.org/10.1016/s0040-6090(96)09357-1