Thin film transistors with layered a-Si:H structure Conference Paper uri icon

abstract

  • Thin film transistors TFTs with the layered a-Si:H structure are presented and discussed. Compared with the conventional single layer a-Si:H TFT, transistor characteristics of this new structure can be superior or inferior, depending on the deposition condition and number of the bulk (non-interface) a-Si:H layers. The mechanism influencing transistor characteristics is discussed. Changes of these TFTs' characteristics are not significant, e.g., the mobility varies within 20%. More data are being collected to verify the statistical significance of this kind of TFT.

author list (cited authors)

  • Kuo, Y.

publication date

  • December 1995