Stress-Induced Deterioration of Nanocrystalline ITO Embedded ZrHfO High-k Nonvolatile Memories
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The stress-induced deterioration phenomenon of the nc-ITO embedded Zr-doped HfO2 high-k gate dielectric film has been studied. The deterioration process is detectable from the decrease of the capacitance in the accumulation region and the shift of flatband voltage as well as the change of the amount of induced charges. In addition, the relaxation current and Coulomb blockage effect are influenced by the stress-induced process. Moreover, the nc-ITO embedded high-k capacitor shows the trap-assisted tunneling phenomenon and the Poole-Frenkel emission mechanism. ©The Electrochemical Society.
author list (cited authors)
Yang, C., Kuo, Y., Lin, C., & Kuo, W.