Nano-resistor Based Devices Effects of Size, Structure, and Performance
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The Electrochemical Society. A unique type of nano-resistor device, which has the current flow perpendicular to the wafer surface, was reported previously. Its characteristics are suitable for light emission, nonvolatile memories, and other applications. In this paper, device size effects on light emission and electric conductivity are examined. In addition, a new co-planar structured nano-resistor device is disclosed. In addition to the fabrication process, changes of the devices electric conductivity and emission spectrum with respect to those of the control sample have been studied. The co-planar structured nano-resistor device can be operated without the concern of the interference of the adjacent devices. An array of co-planar structured nano-resistor devices has been fabricated. It is good for many electric and optical applications.
