Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks Academic Article uri icon

abstract

  • Charge trapping/detrapping and dielectric polarization/relaxation of high-k dielectrics have been investigated. Relaxation behaviors of TiNSiO2p-Si and TiNZr-doped HfOxSiO2p-Si capacitors were studied with a ramp-relax method. The latter shows a relaxation current, which signifies the high-k dielectric integrity and disappears at breakdown, while the former does not. The breakdown sequences of TiNZr-doped HfOxSiO2p-Si and AlHf-doped TaOxsilicatep-Si were identified with relaxation current. For the former, the breakdown initiated at the interfacial SiO2 layer; for the latter, the breakdown starts from the Hf-doped TaOx layer. The breakdown sequence is explained with the material properties and thicknesses of individual layers.

published proceedings

  • APPLIED PHYSICS LETTERS

author list (cited authors)

  • Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.

citation count

  • 14

complete list of authors

  • Luo, Wen||Yuan, Tao||Kuo, Yue||Lu, Jiang||Yan, Jiong||Kuo, Way

publication date

  • May 2006