Charge trapping and dielectric relaxation in connection with breakdown of high-k gate dielectric stacks
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Charge trapping/detrapping and dielectric polarization/relaxation of high- k dielectrics have been investigated. Relaxation behaviors of TiNSi O2 p-Si and TiNZr -doped Hf Ox Si O2 p-Si capacitors were studied with a ramp-relax method. The latter shows a relaxation current, which signifies the high- k dielectric integrity and disappears at breakdown, while the former does not. The breakdown sequences of TiNZr -doped Hf Ox Si O2 p-Si and AlHf -doped Ta Ox silicatep-Si were identified with relaxation current. For the former, the breakdown initiated at the interfacial Si O2 layer; for the latter, the breakdown starts from the Hf-doped Ta Ox layer. The breakdown sequence is explained with the material properties and thicknesses of individual layers. 2006 American Institute of Physics.
author list (cited authors)
Luo, W., Yuan, T., Kuo, Y., Lu, J., Yan, J., & Kuo, W.
complete list of authors
Luo, Wen||Yuan, Tao||Kuo, Yue||Lu, Jiang||Yan, Jiong||Kuo, Way