Capping Layer Effect on Lifetime of Plasma Etched Copper Lines
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© 2019 Electrochemical Society Inc.. All rights reserved. Copper is one of the most important interconnect materials in high-density ICs, large-area flat panel displays, and other electronic products. The new plasma-based etch method has been used in preparing copper fine patterns. Lifetimes of the plasma-etched copper lines with and without a TiW capping layer have been studied with the electromigration method. Under the same current density, the copper line with the TiW capping layer has a shorter lifetime than that without the capping layer. The diffusion of copper into the capping layer could enhance the void formation and therefore accelerate the failure of the copper line. The raise of the line temperature during electrical stress facilitated the broken of the line.
author list (cited authors)
Li, M., Su, J. Q., & Kuo, Y.